Fast Switching Low Gate Charge and Low RDSon 60V N Channel MOSFET Siliup SP60N03HTD for Power Switching
Key Attributes
Model Number:
SP60N03HTD
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
130A
RDS(on):
3mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
540pF
Number:
1 N-channel
Output Capacitance(Coss):
710pF
Input Capacitance(Ciss):
6.1nF
Pd - Power Dissipation:
220W
Gate Charge(Qg):
154nC@10V
Mfr. Part #:
SP60N03HTD
Package:
TO-263
Product Description
Product Overview
The SP60N03HTD is a 60V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on), making it suitable for DC-DC converters and power switching applications. This device has undergone 100% single pulse avalanche energy testing.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Device Code: SP60N03HTD
- Package: TO-263
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 60 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current (TC=25) | ID | 130 | A | |||
| Continuous Drain Current (TC=100) | ID | 87 | A | |||
| Pulsed Drain Current | IDM | 520 | A | |||
| Single Pulse Avalanche Energy1 | EAS | 756 | mJ | |||
| Power Dissipation (TC=25) | PD | 220 | W | |||
| Thermal Resistance Junction-to-Case | RθJC | 0.57 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 60 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=48V , VGS=0V , TJ=25 | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=±20V , VDS=0V | - | - | ±100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 2.0 | 3.0 | 4.0 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V , ID=30A | - | 3.0 | 3.8 | mΩ |
| Input Capacitance | Ciss | VDS=30V , VGS=0V , f=1MHz | - | 7520 | - | pF |
| Output Capacitance | Coss | - | 587 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 433 | - | pF | |
| Total Gate Charge | Qg | VDS=30V , VGS=10V , ID=75A | - | 154 | - | nC |
| Gate-Source Charge | Qgs | - | 38 | - | nC | |
| Gate-Drain Charge | Qgd | - | 51 | - | nC | |
| Turn-On Delay Time | td(on) | VDD=30V, VGS=10V , RG=3Ω, ID=20A | - | 25 | - | nS |
| Rise Time | tr | - | 23 | - | nS | |
| Turn-Off Delay Time | td(off) | - | 90 | - | nS | |
| Fall Time | tf | - | 38 | - | nS | |
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 130 | A | |
| Reverse Recovery Time | trr | IS=20A, di/dt=100A/us, TJ=25 | - | 51 | - | nS |
| Reverse Recovery Charge | Qrr | - | 76 | - | nC |
Package Information (TO-263)
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
|---|---|---|---|---|
| Min. | Max. | Min. | Max. | |
| A | 4.470 | 4.670 | 0.176 | 0.184 |
| A1 | 0.000 | 0.150 | 0.000 | 0.006 |
| B | 1.120 | 1.420 | 0.044 | 0.056 |
| b | 0.710 | 0.910 | 0.028 | 0.036 |
| b1 | 1.170 | 1.370 | 0.046 | 0.054 |
| c | 0.310 | 0.530 | 0.012 | 0.021 |
| c1 | 1.170 | 1.370 | 0.046 | 0.054 |
| D | 10.010 | 10.310 | 0.394 | 0.406 |
| E | 8.500 | 8.900 | 0.335 | 0.350 |
| e | 2.540 TYP. | 0.100 TYP. | ||
| e1 | 4.980 | 5.180 | 0.196 | 0.204 |
| L | 14.940 | 15.500 | 0.588 | 0.610 |
| L1 | 4.950 | 5.450 | 0.195 | 0.215 |
| L2 | 2.340 | 2.740 | 0.092 | 0.108 |
| L3 | 1.300 | 1.700 | 0.051 | 0.067 |
| Φ | 0 | 8 | 0 | 8 |
| V | 5.600 REF. | 0.220 REF. |
2504101957_Siliup-SP60N03HTD_C41355054.pdf
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