N Channel MOSFET Siliup SP1012KT5 20V Drain Source Voltage with 2KV ESD Protection in SOT 523 Package
Key Attributes
Model Number:
SP1012KT5
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
750mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
450mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
650mV@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
9pF
Number:
1 N-channel
Output Capacitance(Coss):
19pF
Input Capacitance(Ciss):
35pF
Pd - Power Dissipation:
150mW
Gate Charge(Qg):
800pC@4.5V
Mfr. Part #:
SP1012KT5
Package:
SOT-523
Product Description
Product Overview
The SP1012KT5 is a 20V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It offers high power and current handling capability, ESD protection up to 2KV, and is available in a surface mount SOT-523 package. This MOSFET is suitable for applications such as battery switches and DC/DC converters.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Type: N-Channel MOSFET
- Package Type: SOT-523
- ESD Protection: 2KV
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 20 | V | |||
| On-Resistance | RDS(on)TYP | @4.5V | 250 | m | ||
| On-Resistance | RDS(on)TYP | @2.5V | 350 | m | ||
| Continuous Drain Current | ID | 0.75 | A | |||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDSS | 20 | V | |||
| Gate-Source Voltage | VGSS | 12 | V | |||
| Continuous Drain Current | ID | 0.75 | A | |||
| Pulse Drain Current | IDM | Tested | 3 | A | ||
| Power Dissipation | PD | 150 | mW | |||
| Thermal Resistance Junction-to-Ambient | RJA | 833 | C/W | |||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | C | ||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250A | 20 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=16V , VGS=0V | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=12V , VDS=0V | - | - | 10 | uA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS , ID=250A | 0.45 | 0.65 | 1.2 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V , ID=600mA | - | 250 | 380 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=2.5V , ID=500mA | - | 350 | 450 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=10V , VGS=0V , f=1MHz | - | 35 | - | pF |
| Output Capacitance | Coss | - | 19 | - | ||
| Reverse Transfer Capacitance | Crss | - | 9 | - | ||
| Total Gate Charge | Qg | VDS=10V , VGS=4.5V , ID=500mA | - | 0.8 | - | nC |
| Gate-Source Charge | Qgs | - | 0.3 | - | ||
| Gate-Drain Charge | Qgd | - | 0.16 | - | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD=10V VGS=4.5V , RG=10 , ID=500mA | - | 4 | - | nS |
| Turn-On Rise Time | tr | - | 19 | - | ||
| Turn-Off Delay Time | td(off) | - | 10 | - | ||
| Turn-Off Fall Time | tf | - | 21 | - | ||
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Package Information (SOT-523) | ||||||
| Dimension A | 0.700 | 0.900 | mm | |||
| Dimension A1 | 0.000 | 0.100 | mm | |||
| Dimension A2 | 0.700 | 0.800 | mm | |||
| Dimension b1 | 0.150 | 0.250 | mm | |||
| Dimension b2 | 0.250 | 0.350 | mm | |||
| Dimension C | 0.100 | 0.200 | mm | |||
| Dimension D | 1.500 | 1.700 | mm | |||
| Dimension E | 0.700 | 0.900 | mm | |||
| Dimension E1 | 1.450 | 1.750 | mm | |||
| Pitch e | 0.500 | TYP | ||||
| Pitch e1 | 0.900 | 1.100 | mm | |||
| Length L | 0.400 | REF | ||||
| Length L1 | 0.260 | 0.460 | mm | |||
| Angle | 0 | 8 | ||||
| Order Information | ||||||
| Device | Package | Unit/Tape | ||||
| SP1012KT5 | SOT-523 | 3000 | ||||
2504101957_Siliup-SP1012KT5_C41354894.pdf
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