Power Management Solutions Featuring Siliup SP40N08NJ 40V N Channel MOSFET with PDFN3X3 8L Package
Key Attributes
Model Number:
SP40N08NJ
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
30A
RDS(on):
8mΩ@10V;11mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
108pF
Number:
1 N-channel
Output Capacitance(Coss):
124pF
Input Capacitance(Ciss):
1.2nF
Pd - Power Dissipation:
30W
Gate Charge(Qg):
33.7nC@10V
Mfr. Part #:
SP40N08NJ
Package:
PDFNWB-8L(3.3x3.3)
Product Description
Product Overview
The SP40N08NJ is a 40V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching speed, low on-resistance (8m at 10V, 11m at 4.5V), and is 100% tested for single pulse avalanche energy. This MOSFET is suitable for applications such as DC-DC converters and power management. It is supplied in a PDFN3X3-8L package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Type: N-Channel MOSFET
- Device Code: 40N08
- Package: PDFN3X3-8L
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Drain-Source Voltage | V(BR)DSS | 40 | V | |||
| On-Resistance | RDS(on) | @10V | 8 | 12 | m | |
| On-Resistance | RDS(on) | @4.5V | 11 | 18 | m | |
| Continuous Drain Current | ID | (Tc=25C) | 30 | A | ||
| Pulse Drain Current | IDM | Tested | 120 | A | ||
| Single Pulse Avalanche Energy | EAS | 40 | mJ | |||
| Power Dissipation | PD | (Tc=25C) | 30 | W | ||
| Thermal Resistance Junction-to-Case | RJC | 4.2 | C/W | |||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | C | ||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 40 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=32V , VGS=0V , TJ=25 | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 1.0 | 1.5 | 2.5 | V |
| Input Capacitance | Ciss | VDS=25V , VGS=0V , f=1MHz | - | 1200 | - | pF |
| Output Capacitance | Coss | - | 124 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 108 | - | pF | |
| Total Gate Charge | Qg | VDS=20V , VGS=10V , ID=10A | - | 33.7 | - | nC |
| Gate-Source Charge | Qgs | - | 8.5 | - | ||
| Gate-Drain Charge | Qg | - | 7.5 | - | ||
| Turn-On Delay Time | Td(on) | VDD=20V, VGS=10V , RG=3, ID=10A | - | 6.4 | - | nS |
| Rise Time | Tr | - | 17.2 | - | ||
| Turn-Off Delay Time | Td(off) | - | 29.6 | - | ||
| Fall Time | Tf | - | 16.8 | - | ||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Diode Continuous Current | IS | - | - | 30 | A | |
| Reverse recover time | Trr | IS=20A, di/dt=100A/us, Tj=25 | - | 11 | - | nS |
| Reverse recovery charge | Qrr | - | 6 | - | nC |
2504101957_Siliup-SP40N08NJ_C28312273.pdf
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