Power switching 30V P Channel MOSFET Siliup SP30P38P8 featuring low RDSon and fast switching performance
Key Attributes
Model Number:
SP30P38P8
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
5.8A
Operating Temperature -:
-55℃~+150℃
RDS(on):
38mΩ@10V;58mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
57pF
Number:
-
Input Capacitance(Ciss):
501pF
Output Capacitance(Coss):
72pF
Pd - Power Dissipation:
1.5W
Gate Charge(Qg):
9nC@10V
Mfr. Part #:
SP30P38P8
Package:
SOP-8L
Product Description
Product Overview
The SP30P38P8 is a 30V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on), making it suitable for power switching applications, hard switched and high frequency circuits, and uninterruptible power supplies. The device is 100% tested for single pulse avalanche energy.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Device Code: 30P38
- Package: SOP-8L
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | -30 | V | |||
| RDS(on) | @-10V | 38 | m | |||
| ID | -5.8 | A | ||||
| RDS(on) | @-4.5V | 58 | m | |||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDS | -30 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | -5.8 | A | |||
| Pulsed Drain Current | IDM | -23.2 | A | |||
| Single pulsed avalanche energy1 | EAS | 12 | mJ | |||
| Power Dissipation | PD | 1.5 | W | |||
| Thermal Resistance Junction-to-Ambient | RJA | 89 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=-250uA | -30 | - | V | |
| Drain-Source Leakage Current | IDSS | VDS=-24V , VGS=0V | - | - | -1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =-250uA | -1.0 | -1.5 | -2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-10V , ID=-4.1A | - | 38 | 50 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-4.5V , ID=-3A | - | 58 | 80 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=-15V , VGS=0V , f=1MHz | - | 501 | - | pF |
| Output Capacitance | Coss | - | 72 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 57 | - | pF | |
| Total Gate Charge | Qg | VDS=-15V , VGS=-10V , ID=-5A | - | 9 | - | nC |
| Gate-Source Charge | Qgs | - | 1.5 | - | ||
| Gate-Drain Charge | Qgd | - | 2.3 | - | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | Td(on) | VDD=-15V, VGS=-10V , RG=3, ID=-1A | - | 8.6 | - | nS |
| Rise Time | Tr | - | 5.0 | - | ||
| Turn-Off Delay Time | Td(off) | - | 28.2 | - | ||
| Fall Time | Tf | - | 13.5 | - | ||
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=-1A | - | - | -1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | -5.8 | A | |
| Reverse recover time | Trr | IS=-5A, di/dt=100A/us, TJ=25 | - | 31 | - | nS |
| Reverse recovery charge | Qrr | - | 10 | - | nC | |
| Package Information (SOP-8L) | ||||||
| Symbol | Dimensions (mm) | Min. | Max. | |||
| A | 1.35 | 1.75 | ||||
| A1 | 0.10 | 0.25 | ||||
| A2 | 1.35 | 1.55 | ||||
| b | 0.33 | 0.51 | ||||
| c | 0.17 | 0.25 | ||||
| D | 4.80 | 5.00 | ||||
| e | (REF.) | 1.27 | ||||
| E | 5.80 | 6.20 | ||||
| E1 | 3.80 | 4.00 | ||||
| L | 0.40 | 1.27 | ||||
| 0 | 8 | |||||
2504101957_Siliup-SP30P38P8_C41355032.pdf
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