100V N Channel MOSFET Siliup SP010N90TH offering avalanche energy tested performance for power circuits
Key Attributes
Model Number:
SP010N90TH
Product Custom Attributes
Drain To Source Voltage:
100V
Configuration:
-
Current - Continuous Drain(Id):
10A
Operating Temperature -:
-55℃~+150℃
RDS(on):
90mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1.6V@250uA
Reverse Transfer Capacitance (Crss@Vds):
23pF
Number:
1 N-channel
Output Capacitance(Coss):
30pF
Pd - Power Dissipation:
50W
Input Capacitance(Ciss):
845pF
Gate Charge(Qg):
16nC@10V
Mfr. Part #:
SP010N90TH
Package:
TO-252
Product Description
Product Overview
The SP010N90TH is a 100V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for efficient power management applications. It features fast switching, low gate charge, and low RDS(on), making it suitable for DC-DC converters and load switching. The device has undergone 100% single pulse avalanche energy testing, ensuring reliability in demanding conditions.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Model: SP010N90TH
- Channel Type: N-Channel
- Package: TO-252
- Technology: Siliup Semiconductor Technology
- Website: www.siliup.com
Technical Specifications
| Product Summary | Value | |
| V(BR)DSS | 100V | |
| RDS(on)TYP (@10V) | 90m | |
| RDS(on)TYP (@4.5V) | 100m | |
| ID | 10A | |
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 100 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current (TC=25) | ID | 10 | A | |||
| Continuous Drain Current (TC=100) | ID | 7 | A | |||
| Pulsed Drain Current | IDM | 40 | A | |||
| Single Pulse Avalanche Energy | EAS | 12 | mJ | |||
| Power Dissipation (TC=25) | PD | 50 | W | |||
| Thermal Resistance Junction-to-Case | RJC | 2.5 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 100 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=80V , VGS=0V , TJ=25 | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 1.0 | 1.6 | 2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V , ID=10A | - | 90 | 110 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V , ID=8A | - | 100 | 120 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=50V , VGS=0V , f=1MHz | - | 845 | - | pF |
| Output Capacitance | Coss | - | 30 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 23 | - | pF | |
| Total Gate Charge | Qg | VDS=50V , VGS=10V , ID=10A | - | 16 | - | nC |
| Gate-Source Charge | Qgs | - | 2.5 | - | ||
| Gate-Drain Charge | Qg d | - | 2.6 | - | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | Td(on) | VDD=50V VGS=10V , RG=3, ID=10A | - | 5 | - | nS |
| Rise Time | Tr | - | 21 | - | ||
| Turn-Off Delay Time | Td(off) | - | 24 | - | ||
| Fall Time | Tf | - | 3 | - | ||
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 10 | A | |
| Reverse Recovery Time | Trr | IS=10A, di/dt=100A/us, TJ=25 | - | 27 | - | nS |
| Reverse Recovery Charge | Qrr | - | 21 | - | nC | |
| TO-252 Package Information (Dimensions in Millimeters) | TO-252 Package Information (Dimensions in Inches) | ||||||
|---|---|---|---|---|---|---|---|
| Symbol | Min. | Max. | Symbol | Min. | Max. | ||
| A | 2.200 | 2.400 | A | 0.087 | 0.094 | ||
| A1 | 0.000 | 0.127 | A1 | 0.000 | 0.005 | ||
| b | 0.660 | 0.860 | b | 0.026 | 0.034 | ||
| c | 0.460 | 0.580 | c | 0.018 | 0.023 | ||
| D | 6.500 | 6.700 | D | 0.256 | 0.264 | ||
| D1 | 5.100 | 5.460 | D1 | 0.201 | 0.215 | ||
| D2 | 4.830 REF. | D2 | 0.190 REF. | ||||
| E | 6.000 | 6.200 | E | 0.236 | 0.244 | ||
| e | 2.186 | 2.386 | e | 0.086 | 0.094 | ||
| L | 9.800 | 10.400 | L | 0.386 | 0.409 | ||
| L1 | 2.900 REF. | L1 | 0.114 REF. | ||||
| L2 | 1.400 | 1.700 | L2 | 0.055 | 0.067 | ||
| L3 | 1.600 REF. | L3 | 0.063 REF. | ||||
| L4 | 0.600 | 1.000 | L4 | 0.024 | 0.039 | ||
| 1.100 | 1.300 | 0.043 | 0.051 | ||||
| 0 | 8 | 0 | 8 | ||||
| h | 0.000 | 0.300 | h | 0.000 | 0.012 | ||
| V | 5.350 REF. | V | 0.211 REF. | ||||
2504101957_Siliup-SP010N90TH_C41354992.pdf
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