High Frequency Switching N Channel Planar MOSFET Siliup SP3710TQ with Low Gate Charge and 100V Voltage Rating
Key Attributes
Model Number:
SP3710TQ
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
60A
Operating Temperature -:
-55℃~+150℃
RDS(on):
18mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V
Reverse Transfer Capacitance (Crss@Vds):
69pF
Number:
1 N-channel
Input Capacitance(Ciss):
3.23nF
Output Capacitance(Coss):
430pF
Pd - Power Dissipation:
200W
Gate Charge(Qg):
134nC@10V
Mfr. Part #:
SP3710TQ
Package:
TO-220-3L
Product Description
Product Overview
The SP3710TQ is a 100V N-Channel Planar MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high-frequency switching applications, this MOSFET features fast switching, low gate charge, and low RDS(on). It is 100% tested for single pulse avalanche energy and is ideal for DC-DC converters and synchronous rectification. The device comes in a TO-220-3L package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Type: N-Channel Planar MOSFET
- Package: TO-220-3L
- Circuit Diagram Marking: 3710 (Device Code)
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| V(BR)DSS | 100 | V | ||||
| RDS(on)TYP | @10V | 18 | m | |||
| ID | 60 | A | ||||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 100 | V | |||
| Gate-Source Voltage | VGS | 25 | V | |||
| Continuous Drain Current (TC=25) | ID | 60 | A | |||
| Continuous Drain Current (TC=100) | ID | 40 | A | |||
| Pulsed Drain Current | IDM | 240 | A | |||
| Single Pulse Avalanche Energy1 | EAS | 1260 | mJ | |||
| Power Dissipation (TC=25) | PD | 200 | W | |||
| Thermal Resistance Junction-to-Case | RJC | 0.625 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 100 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=80V , VGS=0V , TJ=25 | - | - | 25 | uA |
| Gate-Source Leakage Current | IGSS | VGS=25V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 2 | 3 | 4 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V , ID=20A | - | 18 | 23 | m |
| Input Capacitance | Ciss | VDS=25V , VGS=0V , f=1MHz | - | 3230 | - | pF |
| Output Capacitance | Coss | - | 430 | - | ||
| Reverse Transfer Capacitance | Crss | - | 69 | - | ||
| Total Gate Charge | Qg | VDS=50V , VGS=10V , ID=60A | - | 134 | - | nC |
| Gate-Source Charge | Qgs | - | 22 | - | ||
| Gate-Drain Charge | Qg | - | 48 | - | ||
| Turn-On Delay Time | Td(on) | VDD=180V VGS=10V , RG=10, ID=20A | - | 28 | - | nS |
| Rise Time | Tr | - | 47 | - | ||
| Turn-Off Delay Time | Td(off) | - | 57 | - | ||
| Fall Time | Tf | - | 40 | - | ||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 60 | A | |
| Reverse Recovery Time | Trr | IS=28A, di/dt=100A/us, TJ=25 | - | 145 | - | nS |
| Reverse Recovery Charge | Qrr | - | 675 | - | nC | |
| TO-220-3L Package Information | ||||
|---|---|---|---|---|
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
| Min. | Max. | Min. | Max. | |
| A | 4.400 | 4.600 | 0.173 | 0.181 |
| A1 | 2.250 | 2.550 | 0.089 | 0.100 |
| b | 0.710 | 0.910 | 0.028 | 0.036 |
| b1 | 1.170 | 1.370 | 0.046 | 0.054 |
| c | 0.330 | 0.650 | 0.013 | 0.026 |
| c1 | 1.200 | 1.400 | 0.047 | 0.055 |
| D | 9.910 | 10.250 | 0.390 | 0.404 |
| E | 8.950 | 9.750 | 0.352 | 0.384 |
| E1 | 12.650 | 13.050 | 0.498 | 0.514 |
| e | 2.540 TYP. | 0.100 TYP. | ||
| e1 | 4.980 | 5.180 | 0.196 | 0.204 |
| F | 2.650 | 2.950 | 0.104 | 0.116 |
| H | 7.900 | 8.100 | 0.311 | 0.319 |
| h | 0.000 | 0.300 | 0.000 | 0.012 |
| L | 12.900 | 13.400 | 0.508 | 0.528 |
| L1 | 2.850 | 3.250 | 0.112 | 0.128 |
| V | 6.900 REF. | 0.276 REF. | ||
| 3.400 | 3.800 | 0.134 | 0.150 | |
2506271720_Siliup-SP3710TQ_C49257258.pdf
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