Power MOSFET 100V N-Channel Device Siliup SP010N08GTQ with Low Gate Charge and Fast Switching
Key Attributes
Model Number:
SP010N08GTQ
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
65A
RDS(on):
8.5mΩ@10V;11mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.9V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
22pF
Number:
1 N-channel
Output Capacitance(Coss):
339pF
Pd - Power Dissipation:
110W
Input Capacitance(Ciss):
1.635nF
Gate Charge(Qg):
14nC@10V
Mfr. Part #:
SP010N08GTQ
Package:
TO-220-3L
Product Description
Product Overview
The SP010N08GTQ is a 100V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. This device features fast switching, low gate charge, and low RDS(on) thanks to its advanced split gate trench technology. It is 100% tested for single pulse avalanche energy. Ideal for power switching applications, battery management, and uninterruptible power supplies.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP010N08GTQ
- Technology: Advanced Split Gate Trench Technology
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| V(BR)DSS | V(BR)DSS | 100 | V | |||
| RDS(on)TYP | RDS(on) | @10V | 8.5 | 12 | m | |
| RDS(on)TYP | RDS(on) | @4.5V | 11 | 15 | m | |
| ID | ID | 65 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 100 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current (Tc=25) | ID | 65 | A | |||
| Continuous Drain Current (Tc=100) | ID | 45 | A | |||
| Pulsed Drain Current | IDM | 260 | A | |||
| Single Pulse Avalanche Energy1 | EAS | 156 | mJ | |||
| Power Dissipation (Tc=25) | PD | 110 | W | |||
| Thermal Resistance Junction-to-Case | RJC | 1.14 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | ID = 250A, VGS = 0V | 100 | - | - | V |
| Drain Cut-Off Current | IDSS | VDS = 80V, VGS = 0V | - | - | 1 | uA |
| Gate Leakage Current | IGSS | VGS = 20V, VDS = 0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250A | 1.2 | 1.9 | 2.5 | V |
| Drain-Source ON Resistance | RDS(ON) | VGS = 10V, ID = 20A | - | 8.5 | 12 | m |
| Drain-Source ON Resistance | RDS(ON) | VGS = 4.5V, ID = 15A | - | 11 | 15 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS =50V, VGS = 0V, f = 1.0MHz | - | 1635 | - | pF |
| Output Capacitance | Coss | - | 339 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 22 | - | pF | |
| Total Gate Charge | Qg | VDS=50V , VGS=10V , ID=50A | - | 14 | - | nC |
| Gate-Source Charge | Qgs | - | 5 | - | ||
| Gate-Drain Charge | Qgd | - | 7 | - | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VGS = 10V, VDS =50V, ID=50A RG = 4.7 | - | 8 | - | nS |
| Rise Time | tr | - | 16 | - | ||
| Turn-Off Delay Time | td(off) | - | 31 | - | ||
| Fall Time | tf | - | 27 | - | ||
| Drain-Source Body Diode Characteristics | ||||||
| Source-Drain Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 65 | A | |
| Reverse Recovery Time | Trr | IS=20A, di/dt=100A/us, TJ=25 | - | 49 | - | nS |
| Reverse Recovery Charge | Qrr | - | 78 | - | nC | |
| Order Information | Package | Unit/Tube |
|---|---|---|
| SP010N08GTQ | TO-220-3L | 50 |
| Marking | |
|---|---|
| 010N08G | : Product code |
| ** | : Week code |
| TO-220-3L Package Information (Dimensions in Millimeters / Inches) | |||||
|---|---|---|---|---|---|
| Symbol | Dimensions Min. | Dimensions Max. | Dimensions Min. | Dimensions Max. | Unit |
| A | 4.400 | 4.600 | 0.173 | 0.181 | |
| A1 | 2.250 | 2.550 | 0.089 | 0.100 | |
| b | 0.710 | 0.910 | 0.028 | 0.036 | |
| b1 | 1.170 | 1.370 | 0.046 | 0.054 | |
| c | 0.330 | 0.650 | 0.013 | 0.026 | |
| c1 | 1.200 | 1.400 | 0.047 | 0.055 | |
| D | 9.910 | 10.250 | 0.390 | 0.404 | |
| E | 8.950 | 9.750 | 0.352 | 0.384 | |
| E1 | 12.650 | 13.050 | 0.498 | 0.514 | |
| e | 2.540 TYP. | 0.100 TYP. | |||
| e1 | 4.980 | 5.180 | 0.196 | 0.204 | |
| F | 2.650 | 2.950 | 0.104 | 0.116 | |
| H | 7.900 | 8.100 | 0.311 | 0.319 | |
| h | 0.000 | 0.300 | 0.000 | 0.012 | |
| L | 12.900 | 13.400 | 0.508 | 0.528 | |
| L1 | 2.850 | 3.250 | 0.112 | 0.128 | |
| V | 6.900 REF. | 0.276 REF. | |||
| 3.400 | 3.800 | 0.134 | 0.150 | ||
2504101957_Siliup-SP010N08GTQ_C22466798.pdf
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