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quality 30V N Channel MOSFET Siliup SP30N02TD designed for power switching and DC DC converter applications factory
quality 30V N Channel MOSFET Siliup SP30N02TD designed for power switching and DC DC converter applications factory

30V N Channel MOSFET Siliup SP30N02TD designed for power switching and DC DC converter applications

Key Attributes
Model Number: SP30N02TD
Product Custom Attributes
Pd - Power Dissipation:
95W
Drain To Source Voltage:
30V
Configuration:
-
Current - Continuous Drain(Id):
165A
Operating Temperature -:
-55℃~+150℃
RDS(on):
1.9mΩ@10V;3mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.6V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
453pF
Number:
-
Output Capacitance(Coss):
558pF
Input Capacitance(Ciss):
4.5nF
Gate Charge(Qg):
70nC@10V
Mfr. Part #:
SP30N02TD
Package:
TO-263
Product Description

Product Overview

The SP30N02TD is a 30V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for efficient power switching applications. It features fast switching speeds, low gate charge, and low RDS(on), making it ideal for DC-DC converters and power switching circuits. The device is 100% tested for single pulse avalanche energy.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Device Code: 30N02
  • Package: TO-263
  • Material: Silicon
  • Channel Type: N-Channel
  • Origin: China (implied by www.siliup.com and company name)

Technical Specifications

Parameter Symbol Conditions Min. Typ. Max. Units
Product Summary
V(BR)DSS - - - - 30 V
RDS(on) TYP - @10V - 1.9 - m
RDS(on) TYP - @4.5V - 3 - m
ID - - - - 165 A
Absolute Maximum Ratings
Drain-Source Voltage VDS - - - 30 V
Gate-Source Voltage VGS - - - 20 V
Continuous Drain Current (TC=25) ID - - - 165 A
Continuous Drain Current (TC=100) ID - - - 110 A
Pulsed Drain Current IDM - - - 520 A
Single Pulse Avalanche Energy1 EAS - - - 101 mJ
Power Dissipation (TC=25) PD - - - 95 W
Thermal Resistance Junction-to-Case RJC - - 1.3 - /W
Storage Temperature Range TSTG - -55 - 150
Operating Junction Temperature Range TJ - -55 - 150
Electrical Characteristics
Drain-Source Breakdown Voltage BVDSS VGS=0V , ID=250uA 30 - - V
Drain-Source Leakage Current IDSS VDS=24V , VGS=0V , TJ=25 - - 1 uA
Gate-Source Leakage Current IGSS VGS=20V , VDS=0V - - 100 nA
Gate Threshold Voltage VGS(th) VGS=VDS , ID =250uA 1.0 1.6 2.5 V
Static Drain-Source On-Resistance RDS(ON) VGS=10V , ID=30A - 1.9 2.5 m
Static Drain-Source On-Resistance RDS(ON) VGS=4.5V , ID=20A - 3 4 m
Input Capacitance Ciss VDS=15V , VGS=0V , f=1MHz - 4500 - pF
Output Capacitance Coss - - 558 - pF
Reverse Transfer Capacitance Crss - - 453 - pF
Total Gate Charge Qg VDS=15V , VGS=10V , ID=30A - 70 - nC
Gate-Source Charge Qgs - - 12 - nC
Gate-Drain Charge Qgd - - 16.3 - nC
Turn-On Delay Time td(on) VDD=15V, VGS=10V , RG=3, ID=30A - 11 - nS
Rise Time tr - - 120 - nS
Turn-Off Delay Time td(off) - - 25 - nS
Fall Time tf - - 60 - nS
Diode Forward Voltage VSD VGS=0V , IS=1A , TJ=25 - - 1.2 V
Maximum Body-Diode Continuous Current IS - - - 165 A
Reverse Recovery Time trr IS=30A, di/dt=100A/us, TJ=25 - 23 - nS
Reverse Recovery Charge Qrr - - 15 - nC
TO-263 Package Information
Symbol Dimensions In Millimeters Dimensions In Inches
Min. Max. Min. Max.
A 4.470 4.670 0.176 0.184
A1 0.000 0.150 0.000 0.006
B 1.120 1.420 0.044 0.056
b 0.710 0.910 0.028 0.036
b1 1.170 1.370 0.046 0.054
c 0.310 0.530 0.012 0.021
c1 1.170 1.370 0.046 0.054
D 10.010 10.310 0.394 0.406
E 8.500 8.900 0.335 0.350
e 2.540 TYP. 0.100 TYP.
e1 4.980 5.180 0.196 0.204
L 14.940 15.500 0.588 0.610
L1 4.950 5.450 0.195 0.215
L2 2.340 2.740 0.092 0.108
L3 1.300 1.700 0.051 0.067
0 8 0 8
V 5.600 REF. 0.220 REF.

2504101957_Siliup-SP30N02TD_C41354852.pdf
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