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quality Power management MOSFET Siliup SP4227TQ 200V N Channel with low on resistance and thermal efficiency factory
quality Power management MOSFET Siliup SP4227TQ 200V N Channel with low on resistance and thermal efficiency factory

Power management MOSFET Siliup SP4227TQ 200V N Channel with low on resistance and thermal efficiency

Key Attributes
Model Number: SP4227TQ
Product Custom Attributes
Drain To Source Voltage:
200V
Current - Continuous Drain(Id):
70A
RDS(on):
24mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
97pF
Number:
1 N-channel
Pd - Power Dissipation:
330W
Output Capacitance(Coss):
469pF
Input Capacitance(Ciss):
4.711nF
Gate Charge(Qg):
75nC@10V
Mfr. Part #:
SP4227TQ
Package:
TO-220-3L
Product Description

Product Overview

The SP4227TQ is a 200V N-Channel MOSFET designed for efficient power management applications. It features fast switching capabilities, a high-density cell design for ultra-low RDS(on), and an excellent package for good heat dissipation. This MOSFET is 100% tested for single pulse avalanche energy, making it suitable for load switching, PWM applications, and general power management tasks.

Product Attributes

  • Brand: Shanghai Siliup Semiconductor Technology Co. Ltd.
  • Product Code: SP4227TQ
  • Channel Type: N-Channel
  • Package Type: TO-220-3L-C

Technical Specifications

Parameter Symbol Condition Limit Unit
Drain-Source Voltage VDS 200 V
Gate-Source Voltage VGS 20 V
Drain Current-Continuous (Tc=25) ID 70 A
Pulsed Drain Current IDM 280 A
Maximum Power Dissipation (Tc=25) PD 330 W
Single Pulse Avalanche Energy (1) EAS 126 mJ
Thermal Resistance, Junction-to-Case (2) RJC 0.38 /W
Operating Junction and Storage Temperature Range TJ, TSTG -55 To 150
Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250A 200 V
Zero Gate Voltage Drain Current IDSS VDS=160V, VGS=0V 1 A
Gate-Body Leakage Current IGSS VGS=20V, VDS=0V 100 nA
Gate Threshold Voltage VGS(th) VDS=VGS, ID=250A 3 - 5 V
Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=40A 19 - 24 m
Input Capacitance CLSS VDS=25V, VGS=0V, F=1.0MHz 4711 PF
Output Capacitance COSS 469 PF
Reverse Transfer Capacitance CRSS 97 PF
Total Gate Charge Qg VDS=100V, ID=40A, VGS=10V 75 nC
Gate-Source Charge Qgs 47 -
Gate-Drain Charge Qgd 23 -
Turn-on Delay Time td(on) VDD=100V, ID=40A, VGS=10V, RG=2.5 32 nS
Turn-on Rise Time tr 23 -
Turn-Off Delay Time td(off) 25 -
Turn-Off Fall Time tf 31 -
Diode Forward Voltage (3) VSD VGS=0V, IS=1A 1.2 V
Reverse Recovery Time trr TJ= 25C, IF= 40A, VDD = 50V, di/dt = 100A/s 101 ns
Reverse Recovery Charge Qrr 433 nC
Symbol Dimensions In Millimeters Dimensions In Inches
Min. Max. Min. Max.
A 4.400 4.600 0.173 0.181
A1 2.250 2.550 0.089 0.100
b 0.710 0.910 0.028 0.036
b1 1.170 1.370 0.046 0.054
c 0.330 0.650 0.013 0.026
c1 1.200 1.400 0.047 0.055
D 9.910 10.250 0.390 0.404
E 8.950 9.750 0.352 0.384
E1 12.650 13.050 0.498 0.514
e 2.540 TYP. 0.100 TYP.
e1 4.980 5.180 0.196 0.204
F 2.650 2.950 0.104 0.116
H 7.900 8.100 0.311 0.319
h 0.000 0.300 0.000 0.012
L 12.900 13.400 0.508 0.528
L1 2.850 3.250 0.112 0.128
V 6.900 REF. 0.276 REF.
3.400 3.800 0.134 0.150

Marking: 4227 : Product code, ** : Week code.

Circuit Diagram: TO-220-3L-C(1:G 2:D 3:S)

Notes:

  • (1) EAS condition: TJ=25, VDD=50V, VG=10V, L=0.3mH, Rg=25
  • (2) Surface Mounted on FR4 Board, t 10 sec.
  • (3) Pulse Test: Pulse Width 300s, Duty Cycle 2%.
  • (4) Guaranteed by design, not subject to production.

2505291610_Siliup-SP4227TQ_C48888437.pdf
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