60V N Channel MOSFET Siliup 2SK3541 Featuring Surface Mount SOT 723 Package for Power Circuits
Key Attributes
Model Number:
2SK3541
Product Custom Attributes
Drain To Source Voltage:
60V
Configuration:
-
Current - Continuous Drain(Id):
100mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
2Ω@10V
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Reverse Transfer Capacitance (Crss@Vds):
2.5pF
Number:
1 N-channel
Output Capacitance(Coss):
6pF
Pd - Power Dissipation:
150mW
Input Capacitance(Ciss):
12pF
Gate Charge(Qg):
1.34nC@15V
Mfr. Part #:
2SK3541
Package:
SOT-723
Product Description
Product Overview
The 2SK3541 is a 60V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It offers high power and current handling capability, features ESD protection up to 2KV, and is available in a surface mount SOT-723 package. This MOSFET is suitable for applications such as battery switches and DC/DC converters.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: 2SK3541
- Marking Code: KN
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 60 | V | |||
| RDS(on) | @10V | 2 | ||||
| RDS(on) | @4.5V | 2.5 | ||||
| Continuous Drain Current | ID | 100 | mA | |||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDSS | 60 | V | |||
| Gate-Source Voltage | VGSS | 20 | V | |||
| Continuous Drain Current | ID | 100 | mA | |||
| Pulse Drain Current | IDM | Tested | 400 | mA | ||
| Power Dissipation | PD | 150 | mW | |||
| Thermal Resistance Junction-to-Ambient | RJA | 833 | C/W | |||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | C | ||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250A | 60 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=48V , VGS=0V | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 10 | uA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS , ID=250A | 0.7 | 1 | 1.45 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =10V, ID =500mA | - | 2 | 5 | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =4.5V, ID =200mA | - | 2.5 | 8 | |
| Input Capacitance | Ciss | VDS=25V , VGS=0V , f=1MHz | - | 12 | - | pF |
| Output Capacitance | Coss | - | 6 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 2.5 | - | pF | |
| Total Gate Charge | Qg | VDS=10V , VGS=15V , ID=1A | - | 1.34 | - | nC |
| Gate-Source Charge | Qgs | - | 0.29 | - | ||
| Gate-Drain Charge | Qg | - | 0.2 | - | ||
| Turn-On Delay Time | td(on) | VDD=15V VGS=10V , RG=2.3 , ID=1A | - | 5 | - | nS |
| Turn-On Rise Time | tr | - | 18 | - | ||
| Turn-Off Delay Time | td(off) | - | 8 | - | ||
| Turn-Off Fall Time | tf | - | 14 | - | ||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Package Information (SOT-723) | ||||||
| Symbol | Dimensions In Millimeters | Min. | Max. | |||
| A | 0.430 | 0.500 | ||||
| A1 | 0.000 | 0.050 | ||||
| b | 0.170 | 0.270 | ||||
| b1 | 0.270 | 0.370 | ||||
| c | 0.080 | 0.150 | ||||
| D | 1.150 | 1.250 | ||||
| E | 1.150 | 1.250 | ||||
| E1 | 0.750 | 0.850 | ||||
| e | TYP. | 0.800 | ||||
| REF. | 7 | |||||
| Order Information | ||||||
| Device | Package | Unit/Tape | ||||
| 2SK3541 | SOT-723 | 8000 | ||||
2504101957_Siliup-2SK3541_C41349574.pdf
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