High Voltage N Channel Planar MOSFET Siliup SP15N65TG 650V with Low RDS on and Fast Switching Speed
Key Attributes
Model Number:
SP15N65TG
Product Custom Attributes
Drain To Source Voltage:
650V
Configuration:
-
Current - Continuous Drain(Id):
15A
Operating Temperature -:
-55℃~+150℃
RDS(on):
550mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
10pF
Number:
-
Output Capacitance(Coss):
217pF
Pd - Power Dissipation:
43W
Input Capacitance(Ciss):
2.433nF
Gate Charge(Qg):
50nC@10V
Mfr. Part #:
SP15N65TG
Package:
TO-220F
Product Description
Product Overview
The SP15N65TG is a 650V N-Channel Planar MOSFET from Siliup Semiconductor Technology Co. Ltd. Engineered for high-frequency switching applications, this MOSFET features fast switching speeds, low gate charge, and a low RDS(on) of 0.55 (typ.) at 10V. It is 100% tested for single pulse avalanche energy, making it ideal for DC-DC converters and synchronous rectification. The device is housed in a TO-220F package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP15N65TG
- Technology: N-Channel Planar MOSFET
- Package: TO-220F
- Marking: 15N65 (Device Code)
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 650 | V | |||
| RDS(on) | RDS(on)TYP | @10V | 0.55 | |||
| Continuous Drain Current | ID | 15 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (Ta=25) | 650 | V | ||
| Gate-Source Voltage | VGS | (Ta=25) | 30 | V | ||
| Continuous Drain Current (Tc=25) | ID | 15 | A | |||
| Continuous Drain Current (Tc=100) | ID | 10 | A | |||
| Pulsed Drain Current | IDM | 60 | A | |||
| Single Pulse Avalanche Energy | EAS | 720 | mJ | |||
| Power Dissipation (Tc=25) | PD | 43 | W | |||
| Thermal Resistance Junction-to-Case | RJC | 2.9 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | ID = 250A, VGS = 0V | 650 | - | - | V |
| Drain Cut-Off Current | IDSS | VDS = 520V, VGS = 0V | - | - | 1 | A |
| Gate Leakage Current | IGSS | VGS = 30V, VDS = 0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250A | 3.0 | 4.0 | 5.0 | V |
| Drain-Source ON Resistance | RDS(ON) | VGS = 10V, ID = 7A | - | 0.55 | 0.7 | |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS =25V, VGS = 0V, f = 1.0MHz | - | 2433 | - | pF |
| Output Capacitance | Coss | - | 217 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 10 | - | pF | |
| Total Gate Charge | Qg | VDS=520V , VGS=10V , ID=15A | - | 50 | - | nC |
| Gate-Source Charge | Qgs | - | 11 | - | nC | |
| Gate-Drain Charge | Qg d | - | 20 | - | nC | |
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD=325V , VGS=10V , RG=10, ID=16A | - | 26 | - | nS |
| Rise Time | tr | - | 41 | - | nS | |
| Turn-Off Delay Time | td(off) | - | 65 | - | nS | |
| Fall Time | tf | - | 42 | - | nS | |
| Drain-Source Body Diode Characteristics | ||||||
| Source-Drain Diode Forward Voltage | VSD | IS = 1A, VGS = 0V | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 15 | A | |
| Body Diode Reverse Recovery Time | Trr | IS =15A, dIF/dt = 100A/us | - | 5925 | - | nS |
| Body Diode Reverse Recovery Charge | Qrr | - | 21.8 | - | uC | |
| Package Information | ||||||
| Package Type | TO-220F | |||||
| Dimensions (mm) | A | 4.300 | - | 4.700 | ||
| A1 | 1.300 | REF. | - | |||
| A2 | 2.800 | - | 3.200 | |||
| A3 | 2.500 | - | 2.900 | |||
| b | 0.500 | - | 0.750 | |||
| b1 | 1.100 | - | 1.350 | |||
| b2 | 1.500 | - | 1.750 | |||
| c | 0.500 | - | 0.750 | |||
| D | 9.960 | - | 10.360 | |||
| E | 14.800 | - | 15.200 | |||
| e | - | 2.540 | TYP. | |||
| F | - | 2.700 | REF. | |||
| - | 3.500 | REF. | ||||
| h | 0.000 | - | 0.300 | |||
| h1 | - | 0.800 | REF. | |||
| h2 | - | 0.500 | REF. | |||
| L | 28.000 | - | 28.400 | |||
| L1 | 1.700 | - | 1.900 | |||
| L2 | 0.900 | - | 1.100 | |||
2504101957_Siliup-SP15N65TG_C42372389.pdf
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