Siliup SP12N65TQ 650V N Channel Planar MOSFET Featuring Low R DS on and Fast Switching for Power Applications
Key Attributes
Model Number:
SP12N65TQ
Product Custom Attributes
Drain To Source Voltage:
650V
Configuration:
-
Current - Continuous Drain(Id):
12A
Operating Temperature -:
-55℃~+150℃
RDS(on):
600mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
9pF
Number:
-
Output Capacitance(Coss):
139pF
Pd - Power Dissipation:
145W
Input Capacitance(Ciss):
1.905nF
Gate Charge(Qg):
43nC@10V
Mfr. Part #:
SP12N65TQ
Package:
TO-220-3L-C
Product Description
Product Overview
The SP12N65TQ is a 650V N-Channel Planar MOSFET from Siliup Semiconductor Technology Co. Ltd. This device features fast switching, low gate charge, and low RDS(on), making it ideal for high-frequency switching applications. It is 100% tested for single pulse avalanche energy and is suitable for DC-DC converters and synchronous rectification.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Technology: Planar MOSFET
- Channel Type: N-Channel
- Package Type: TO-220-3L
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| V(BR)DSS | 650 | V | ||||
| RDS(on)TYP | @10V | 0.6 | ||||
| ID | 12 | A | ||||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (Ta=25, unless otherwise noted) | 650 | V | ||
| Gate-Source Voltage | VGS | (Ta=25, unless otherwise noted) | 30 | V | ||
| Continuous Drain Current (Tc=25) | ID | (Ta=25, unless otherwise noted) | 12 | A | ||
| Continuous Drain Current (Tc=100) | ID | (Ta=25, unless otherwise noted) | 8 | A | ||
| Pulsed Drain Current | IDM | (Ta=25, unless otherwise noted) | 48 | A | ||
| Single Pulse Avalanche Energy1 | EAS | (Ta=25, unless otherwise noted) | 605 | mJ | ||
| Power Dissipation (Tc=25) | PD | (Ta=25, unless otherwise noted) | 145 | W | ||
| Thermal Resistance Junction-to-Case | RJC | (Ta=25, unless otherwise noted) | 0.86 | /W | ||
| Storage Temperature Range | TSTG | (Ta=25, unless otherwise noted) | -55 | 150 | ||
| Operating Junction Temperature Range | TJ | (Ta=25, unless otherwise noted) | -55 | 150 | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | ID = 250A, VGS = 0V | 650 | - | - | V |
| Drain Cut-Off Current | IDSS | VDS = 520V, VGS = 0V | - | - | 1 | A |
| Gate Leakage Current | IGSS | VGS = 30V, VDS = 0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250A | 2.0 | 3.0 | 4.0 | V |
| Drain-Source ON Resistance | RDS(ON) | VGS = 10V, ID = 6A | - | 0.6 | 0.75 | |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS =25V, VGS = 0V, f = 1.0MHz | - | 1905 | - | pF |
| Output Capacitance | Coss | VDS =25V, VGS = 0V, f = 1.0MHz | - | 139 | - | pF |
| Reverse Transfer Capacitance | Crss | VDS =25V, VGS = 0V, f = 1.0MHz | - | 9 | - | pF |
| Total Gate Charge | Qg | VDS=500V , VGS=10V , ID=12A | - | 43 | - | nC |
| Gate-Source Charge | Qgs | VDS=500V , VGS=10V , ID=12A | - | 9 | - | nC |
| Gate-Drain Charge | Qg | VDS=500V , VGS=10V , ID=12A | - | 15 | - | nC |
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD=325V , VGS=10V , RG=10, ID=10A | - | 25 | - | nS |
| Rise Time | tr | VDD=325V , VGS=10V , RG=10, ID=10A | - | 39 | - | nS |
| Turn-Off Delay Time | td(off) | VDD=325V , VGS=10V , RG=10, ID=10A | - | 52 | - | nS |
| Fall Time | tf | VDD=325V , VGS=10V , RG=10, ID=10A | - | 41 | - | nS |
| Drain-Source Body Diode Characteristics | ||||||
| Source-Drain Diode Forward Voltage | VSD | IS = 1A, VGS = 0V | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | IS = 1A, VGS = 0V | - | - | 12 | A |
| Body Diode Reverse Recovery Time | Trr | IS = 12A, dIF/dt = 100A/us | - | 116 | - | nS |
| Body Diode Reverse Recovery Charge | Qrr | IS = 12A, dIF/dt = 100A/us | - | 10.4 | - | uC |
| Package Information (TO-220-3L) | ||||
|---|---|---|---|---|
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
| Min. | Max. | Min. | Max. | |
| A | 4.400 | 4.600 | 0.173 | 0.181 |
| A1 | 2.250 | 2.550 | 0.089 | 0.100 |
| b | 0.710 | 0.910 | 0.028 | 0.036 |
| b1 | 1.170 | 1.370 | 0.046 | 0.054 |
| c | 0.330 | 0.650 | 0.013 | 0.026 |
| c1 | 1.200 | 1.400 | 0.047 | 0.055 |
| D | 9.910 | 10.250 | 0.390 | 0.404 |
| E | 8.950 | 9.750 | 0.352 | 0.384 |
| E1 | 12.650 | 13.050 | 0.498 | 0.514 |
| e | 2.540 TYP. | 0.100 TYP. | ||
| e1 | 4.980 | 5.180 | 0.196 | 0.204 |
| F | 2.650 | 2.950 | 0.104 | 0.116 |
| H | 7.900 | 8.100 | 0.311 | 0.319 |
| h | 0.000 | 0.300 | 0.000 | 0.012 |
| L | 12.900 | 13.400 | 0.508 | 0.528 |
| L1 | 2.850 | 3.250 | 0.112 | 0.128 |
| V | 6.900 REF. | 0.276 REF. | ||
| 3.400 | 3.800 | 0.134 | 0.150 | |
Note: 1 The test condition is VDD=50V, VGS=10V, L=10mH, RG=30.
2504101957_Siliup-SP12N65TQ_C42372388.pdf
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