Power Switching MOSFET Siliup SP60N12GTH 60V N Channel with Low Gate Charge and Avalanche Energy Test
Key Attributes
Model Number:
SP60N12GTH
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
30A
Operating Temperature -:
-55℃~+150℃
RDS(on):
12mΩ@10V;15mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.6V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
10pF
Number:
1 N-channel
Output Capacitance(Coss):
235pF
Input Capacitance(Ciss):
940pF
Pd - Power Dissipation:
55W
Gate Charge(Qg):
23nC@10V
Mfr. Part #:
SP60N12GTH
Package:
TO-252
Product Description
Product Overview
The SP60N12GTH is a 60V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for power switching applications. It features fast switching, low gate charge, and low RDS(on) thanks to its advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for hard switched and high frequency circuits, as well as uninterruptible power supply systems. The product is available in a TO-252 package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP60N12GTH
- Package: TO-252
- Channel Type: N-Channel
- Technology: Advanced Split Gate Trench Technology
Technical Specifications
| Parameter | Symbol | Test Condition | Rating | Unit |
|---|---|---|---|---|
| Drain-Source Voltage | V(BR)DSS | 60 | V | |
| RDS(on) Typ. (VGS=10V) | RDS(on)TYP | @10V | 12 | m |
| RDS(on) Typ. (VGS=4.5V) | RDS(on)TYP | @4.5V | 15 | m |
| Continuous Drain Current | ID | (Tc=25C) | 30 | A |
| Continuous Drain Current | ID | (Tc=100C) | 20 | A |
| Pulse Drain Current | IDM | Tested | 120 | A |
| Single Pulse Avalanche Energy | EAS | 100 | mJ | |
| Power Dissipation | PD | (Tc=25C) | 55 | W |
| Thermal Resistance Junction-to-Case | RJC | 2.27 | C/W | |
| Maximum Junction Temperature | TJ | -55 to 150 | C | |
| Storage Temperature Range | TSTG | -55 to 150 | C | |
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250mA | 60 | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=48V, VGS=0V | - | 1 uA |
| Gate Leakage Current | IGSS | VGS=20V, VDS=0V | - | 100 nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=250uA | 1 to 2.5 | V |
| Drain-Source On-state Resistance | RDS(ON) | VGS=10V, ID=20A | - 12 16 | m |
| Drain-Source On-state Resistance | RDS(ON) | VGS=4.5V, ID=10A | - 15 22 | m |
| Input Capacitance | Ciss | VGS=0V, VDS=30V, F=1MHz | - 940 | pF |
| Output Capacitance | Coss | - 235 | pF | |
| Reverse Transfer Capacitance | Crss | - 10 | pF | |
| Total Gate Charge | Qg | VDS=30V, VGS=10V, ID=20A | - 23 | nC |
| Gate-Source Charge | Qgs | - 4.8 | nC | |
| Gate-Drain Charge | Qg | - 4.0 | nC | |
| Turn-On Delay Time | td(on) | VDD=30V, ID=20A, VGS=10V, RG=4.7 | - 4.7 | nS |
| Rise Time | tr | - 2.9 | nS | |
| Turn-Off Delay Time | td(off) | - 14 | nS | |
| Fall Time | tf | - 2.9 | nS | |
| Source-Drain Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - 30 | A | |
| Reverse Recovery Time | Trr | IS=20 A,di/dt=100 A/sTJ=25 | - 19 | nS |
| Reverse Recovery Charge | Qrr | - 12 | nC |
| TO-252 Package Information | Dimensions In Millimeters | Dimensions In Inches | |||
|---|---|---|---|---|---|
| Symbol | Min. | Max. | Min. | Max. | |
| A | 2.200 | 2.400 | 0.087 | 0.094 | |
| A1 | 0.000 | 0.127 | 0.000 | 0.005 | |
| b | 0.660 | 0.860 | 0.026 | 0.034 | |
| c | 0.460 | 0.580 | 0.018 | 0.023 | |
| D | 6.500 | 6.700 | 0.256 | 0.264 | |
| D1 | 5.100 | 5.460 | 0.201 | 0.215 | |
| D2 | 4.830 REF. | 0.190 REF. | |||
| E | 6.000 | 6.200 | 0.236 | 0.244 | |
| e | 2.186 | 2.386 | 0.086 | 0.094 | |
| L | 9.800 | 10.400 | 0.386 | 0.409 | |
| L1 | 2.900 REF. | 0.114 REF. | |||
| L2 | 1.400 | 1.700 | 0.055 | 0.067 | |
| L3 | 1.600 REF. | 0.063 REF. | |||
| L4 | 0.600 | 1.000 | 0.024 | 0.039 | |
| 1.100 | 1.300 | 0.043 | 0.051 | ||
| 0 | 8 | 0 | 8 | ||
| h | 0.000 | 0.300 | 0.000 | 0.012 | |
| V | 5.350 REF. | 0.211 REF. | |||
2504101957_Siliup-SP60N12GTH_C22466778.pdf
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