200V N Channel MOSFET Siliup SP50N20TF with Low Gate Charge and High Frequency Switching Capability
Key Attributes
Model Number:
SP50N20TF
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
200V
Current - Continuous Drain(Id):
50A
Operating Temperature -:
-55℃~+150℃
RDS(on):
33mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Reverse Transfer Capacitance (Crss@Vds):
76pF
Number:
-
Output Capacitance(Coss):
750pF
Input Capacitance(Ciss):
4.85nF
Pd - Power Dissipation:
300W
Gate Charge(Qg):
66nC@10V
Mfr. Part #:
SP50N20TF
Package:
TO-247
Product Description
Product Overview
The SP50N20TF is a 200V N-Channel Planar MOSFET from Siliup Semiconductor Technology Co. Ltd. It offers fast switching, low gate charge, and low RDS(on), making it ideal for high-frequency switching applications and synchronous rectification. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for DC-DC converters. The device comes in a TO-247 package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP50N20TF
- Device Code: 50N20
- Package Type: TO-247
- Channel Type: N-Channel
- Technology: Planar MOSFET
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Breakdown Voltage (Drain-Source) | V(BR)DSS | 200 | V | |||
| On-Resistance (Typical) | RDS(on)TYP | @10V | 33 | m | ||
| Continuous Drain Current | ID | 50 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 200 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current (Tc=25) | ID | 50 | A | |||
| Continuous Drain Current (Tc=100) | ID | 33.3 | A | |||
| Pulsed Drain Current | IDM | 200 | A | |||
| Single Pulse Avalanche Energy | EAS | 3920 | mJ | |||
| Power Dissipation (Tc=25) | PD | 300 | W | |||
| Thermal Resistance Junction-to-Case | RJC | 0.416 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | ID = 250A, VGS = 0V | 200 | - | - | V |
| Drain Cut-Off Current | IDSS | VDS = 160V, VGS = 0V | - | - | 25 | A |
| Gate Leakage Current | IGSS | VGS = 20V, VDS = 0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250A | 2.0 | 3.0 | 4.0 | V |
| Drain-Source ON Resistance | RDS(ON) | VGS = 10V, ID = 26A | - | 33 | 41 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS =25V, VGS = 0V, f = 1.0MHz | - | 4850 | - | pF |
| Output Capacitance | Coss | - | 750 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 76 | - | pF | |
| Total Gate Charge | Qg | VDS=100V , VGS=10V , ID=26A | - | 66 | - | nC |
| Gate-Source Charge | Qgs | - | 18.5 | - | ||
| Gate-Drain Charge | Qgd | - | 29 | - | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VGS = 250V, VDS =10V, RG=10, ID=20A | - | 28 | - | nS |
| Rise Time | tr | - | 47 | - | ||
| Turn-Off Delay Time | td(off) | - | 57 | - | ||
| Fall Time | tf | - | 40 | - | ||
| Drain-Source Body Diode Characteristics | ||||||
| Source-Drain Diode Forward Voltage | VSD | IS = 1A, VGS = 0V | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 50 | A | |
| Body Diode Reverse Recovery Time | Trr | IS = 30A, dIF/dt = 100A/us | - | 185 | - | nS |
| Body Diode Reverse Recovery Charge | Qrr | - | 755 | - | nC | |
Package Information (TO-247)
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
|---|---|---|---|---|
| Min. | Max. | Min. | Max. | |
| A | 4.850 | 5.150 | 0.191 | 0.200 |
| A1 | 2.200 | 2.600 | 0.087 | 0.102 |
| b2 | 1.800 | 2.200 | 0.071 | 0.087 |
| b | 1.000 | 1.400 | 0.039 | 0.055 |
| b1 | 2.800 | 3.200 | 0.110 | 0.126 |
| c | 0.500 | 0.700 | 0.020 | 0.028 |
| c1 | 1.900 | 2.100 | 0.075 | 0.083 |
| D | 15.450 | 15.750 | 0.608 | 0.620 |
| E1 | 3.500 REF. | 0.138 REF. | ||
| E2 | 3.600 REF. | 0.142 REF. | ||
| L | 40.900 | 41.300 | 1.610 | 1.626 |
| L1 | 24.800 | 25.100 | 0.976 | 0.988 |
| L2 | 20.300 | 20.600 | 0.799 | 0.811 |
| 7.100 | 7.300 | 0.280 | 0.287 | |
| e | 5.450 TYP. | 0.215 TYP. | ||
| H1 | 5.980 REF. | 0.235 REF. | ||
| h | 0.000 | 0.300 | 0.000 | 0.012 |
2504101957_Siliup-SP50N20TF_C42372374.pdf
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