20V TrenchFET Complementary MOSFET Siliup SP2011ACTM Designed for DC DC Converters and Motor Control
Key Attributes
Model Number:
SP2011ACTM
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
35A;38A
RDS(on):
8mΩ@4.5V;9mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
700mV@250uA
Type:
N-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds):
146pF;274pF
Number:
1 N-Channel + 1 P-Channel
Output Capacitance(Coss):
178pF;332pF
Pd - Power Dissipation:
32.8W
Input Capacitance(Ciss):
1.196nF;2.872nF
Gate Charge(Qg):
13.4nC@4.5V;72.8nC@4.5V
Mfr. Part #:
SP2011ACTM
Package:
TO-252-4L
Product Description
Product Overview
The SP2011ACTM is a 20V Complementary MOSFET from Siliup Semiconductor Technology Co. Ltd. It features TrenchFET technology for excellent RDS(on) and low gate charge, enabling fast switching speeds. This MOSFET is suitable for applications such as motor control, DC-DC converters, and power management.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Line: SP2011ACTM
- Technology: TrenchFET Power MOSFET
- Package: TO-252-4L
Technical Specifications
| SP2011ACTM 20V Complementary MOSFET | |||
|---|---|---|---|
| Parameter | Symbol | N-Channel | P-Channel |
| Product Summary | |||
| Drain-Source Voltage (V(BR)DSS) | V(BR)DSS | 20V | -20V |
| On-Resistance (RDS(on) Typ) | RDS(on) | 8m@10V, 10m@4.5V | 9m@-10V, 11m@-4.5V |
| Continuous Drain Current (ID) | ID | 35A | -38A |
| Absolute Maximum Ratings (Ta=25 unless otherwise noted) | |||
| Drain-Source Voltage | VDS | 20V | -20V |
| Gate-Source Voltage | VGS | 12V | 12V |
| Continuous Drain Current | ID | 35A | -38A |
| Drain Current Pulsed | IDM | 140A | 152A |
| Power Dissipation | PD | 32.8W | |
| Thermal Resistance Junction to Cassette | RJC | 3.8 /W | |
| Junction Temperature | TJ | 150 | |
| Storage Temperature | TSTG | -55~ +150 | |
| N-Channel Electrical Characteristics (TA=25 C, unless otherwise noted) | |||
| Drain-source breakdown voltage | V(BR)DSS | 20V | - |
| Zero gate voltage drain current | IDSS | 1 A | - |
| Gate-body leakage current | IGSS | 0.1 A | - |
| Gate threshold voltage | VGS(th) | 0.5 - 1.0 V | - |
| Drain-source on-resistance | RDS(on) | 8 - 10 m (VGS=4.5V, ID=10A) 10 - 15 m (VGS=2.5V, ID=8A) | - |
| Input Capacitance | Ciss | 1196 pF | - |
| Output Capacitance | Coss | 178 pF | - |
| Reverse Transfer Capacitance | Crss | 146 pF | - |
| Total gate charge | Qg | 13.4 nC | - |
| Gate-source charge | Qgs | 2.6 nC | - |
| Gate-drain charge | Qgd | 3.4 nC | - |
| Turn-on delay time | td(on) | 7.8 ns | - |
| Turn-on rise time | tr | 19.4 ns | - |
| Turn-off delay time | td(off) | 31 ns | - |
| Turn-off fall time | tf | 12 ns | - |
| Diode Forward Voltage | VSD | 1.2 V | - |
| P-Channel Electrical Characteristics (TA=25 C, unless otherwise noted) | |||
| Drain-source breakdown voltage | V(BR)DSS | - | -20V |
| Zero gate voltage drain current | IDSS | - | -1 A |
| Gate-body leakage current | IGSS | - | 100 nA |
| Gate threshold voltage | VGS(th) | - | -0.5 - -1.0 V |
| Drain-source on-resistance | RDS(on) | - | 9 - 11.5 m (VGS=-10V, ID=-10A) 11 - 15 m (VGS=-4.5V, ID=-8A) |
| Input Capacitance | Ciss | - | 2872 pF |
| Output Capacitance | Coss | - | 332 pF |
| Reverse Transfer Capacitance | Crss | - | 274 pF |
| Turn-on delay time | td(on) | - | 8 ns |
| Turn-on rise time | tr | - | 33 ns |
| Turn-off delay time | td(off) | - | 132 ns |
| Turn-off fall time | tf | - | 131 ns |
| Total gate charge | Qg | - | 72.8 nC |
| Gate-source charge | Qgs | - | 6.7 nC |
| Gate-drain charge | Qg | - | 10.3 nC |
| Source-Drain Diode Voltage | VSD | - | -1.2 V |
TO-252-4L Package Information (Dimensions in Millimeters)
| Symbol | Min. | Max. |
|---|---|---|
| A | 2.20 | 2.40 |
| A1 | 0 | 0.15 |
| b | 0.40 | 0.60 |
| b2 | 0.50 | 0.80 |
| b3 | 5.20 | 5.50 |
| c2 | 0.45 | 0.55 |
| D | 5.40 | 5.80 |
| D1 | 4.57 | - |
| E | 6.40 | 6.80 |
| E1 | 3.81 | - |
| e | 1.27REF. | - |
| F | 0.40 | 0.60 |
| H | 9.40 | 10.20 |
| L | 1.40 | 1.77 |
| L1 | 2.40 | 3.00 |
| L4 | 0.80 | 1.20 |
2504101957_Siliup-SP2011ACTM_C41355090.pdf
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