power management solution featuring Siliup SP40P01GTO 40V P Channel Power MOSFET with low gate charge

Key Attributes
Model Number: SP40P01GTO
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
330A
Operating Temperature -:
-55℃~+150℃
RDS(on):
2.5mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
95pF
Number:
1 P-Channel
Output Capacitance(Coss):
3.95nF
Pd - Power Dissipation:
400W
Input Capacitance(Ciss):
15.5nF
Gate Charge(Qg):
228nC@10V
Mfr. Part #:
SP40P01GTO
Package:
TOLL
Product Description

Product Overview

The SP40P01GTO is a 40V P-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for efficient power management applications. It features fast switching, low gate charge, and low RDS(on) thanks to its advanced Split Gate Trench Technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for PWM applications, hard switched, and high-frequency circuits.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Device Code: SP40P01GTO
  • Package: TOLL

Technical Specifications

Parameter Symbol Conditions Min. Typ. Max. Units
Product Summary
Drain-Source Voltage V(BR)DSS -40 V
RDS(on)TYP @-10V 1.3 m
RDS(on)TYP @-4.5V 1.8 m
ID -330 A
Absolute Maximum Ratings
Drain-Source Voltage VDS (Ta=25) -40 V
Gate-Source Voltage VGS (Ta=25) 20 V
Continuous Drain Current ID (Tc=25) -330 A
Continuous Drain Current ID (Tc=100) -220 A
Pulsed Drain Current IDM -1320 A
Single Pulse Avalanche Energy EAS 2350 mJ
Power Dissipation PD (Tc=25) 400 W
Thermal Resistance Junction-to-Case RJC 0.31 /W
Storage Temperature Range TSTG -55 150
Operating Junction Temperature Range TJ -55 150
Electrical Characteristics
Drain-Source Breakdown Voltage BVDSS VGS=0V , ID= -250uA -40 -47 - V
Drain-Source Leakage Current IDSS VDS=-32V , VGS=0V , TJ=25 - - -1 uA
Gate-Source Leakage Current IGSS VGS=20V , VDS=0V - - 100 nA
Gate Threshold Voltage VGS(th) VGS=VDS , ID = -250uA -1.0 -1.6 -2.5 V
Static Drain-Source On-Resistance RDS(ON) VGS=-10V , ID= -20A - 1.3 1.7 m
Static Drain-Source On-Resistance RDS(ON) VGS=-4.5V , ID=-20A - 1.8 2.5 m
Dynamic Characteristics
Input Capacitance Ciss VDS=-20V , VGS=0V , f=1MHz - 15500 - pF
Output Capacitance Coss - 3950 - pF
Reverse Transfer Capacitance Crss - 95 - pF
Total Gate Charge Qg VDS=-20V , VGS=10V , ID=-75A - 228 - nC
Gate-Source Charge Qgs - 49 - nC
Gate-Drain Charge Qg d - 31 - nC
Switching Characteristics
Turn-On Delay Time Td(on) VDD=-20V , VGS=10V , RG=1.6,ID=-75A - 39 - nS
Rise Time Tr - 58 - nS
Turn-Off Delay Time Td(off) - 152 - nS
Fall Time Tf - 46 - nS
Diode Characteristics
Diode Forward Voltage VSD VGS=0V , IS=-1A , TJ=25 - - -1.2 V
Maximum Body-Diode Continuous Current IS - - -330 A
Reverse Recovery Time Trr IS=-20A, di/dt=100A/us, TJ=25 - 79 - nS
Reverse Recovery Charge Qrr - 213 - nC
Package Dimensions (TOLL)
Symbol Dimensions In Millimeters Min. Nom. Max.
A 2.20 2.30 2.40
b 0.65 0.75 0.85
C 0.508 REF
D 10.25 10.40 10.55
D1 2.85 3.00 3.15
E 9.75 9.90 10.05
E1 9.65 9.80 9.95
E2 8.95 9.10 9.25
E3 7.25 7.40 7.55
e 1.20 BSC
F 1.05 1.20 1.35
H 11.55 11.70 11.85
H1 6.03 6.18 6.33
H2 6.85 7.00 7.15
H3 3.00 BSC
L 1.55 1.70 1.85
L1 0.55 0.7 0.85
L2 0.45 0.6 0.75
M 0.08 REF.
8 10 12
K 4.25 4.40 4.55

2504101957_Siliup-SP40P01GTO_C45351226.pdf

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