power management solution featuring Siliup SP40P01GTO 40V P Channel Power MOSFET with low gate charge
Product Overview
The SP40P01GTO is a 40V P-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for efficient power management applications. It features fast switching, low gate charge, and low RDS(on) thanks to its advanced Split Gate Trench Technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for PWM applications, hard switched, and high-frequency circuits.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Device Code: SP40P01GTO
- Package: TOLL
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | -40 | V | |||
| RDS(on)TYP | @-10V | 1.3 | m | |||
| RDS(on)TYP | @-4.5V | 1.8 | m | |||
| ID | -330 | A | ||||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (Ta=25) | -40 | V | ||
| Gate-Source Voltage | VGS | (Ta=25) | 20 | V | ||
| Continuous Drain Current | ID | (Tc=25) | -330 | A | ||
| Continuous Drain Current | ID | (Tc=100) | -220 | A | ||
| Pulsed Drain Current | IDM | -1320 | A | |||
| Single Pulse Avalanche Energy | EAS | 2350 | mJ | |||
| Power Dissipation | PD | (Tc=25) | 400 | W | ||
| Thermal Resistance Junction-to-Case | RJC | 0.31 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID= -250uA | -40 | -47 | - | V |
| Drain-Source Leakage Current | IDSS | VDS=-32V , VGS=0V , TJ=25 | - | - | -1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID = -250uA | -1.0 | -1.6 | -2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-10V , ID= -20A | - | 1.3 | 1.7 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-4.5V , ID=-20A | - | 1.8 | 2.5 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=-20V , VGS=0V , f=1MHz | - | 15500 | - | pF |
| Output Capacitance | Coss | - | 3950 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 95 | - | pF | |
| Total Gate Charge | Qg | VDS=-20V , VGS=10V , ID=-75A | - | 228 | - | nC |
| Gate-Source Charge | Qgs | - | 49 | - | nC | |
| Gate-Drain Charge | Qg d | - | 31 | - | nC | |
| Switching Characteristics | ||||||
| Turn-On Delay Time | Td(on) | VDD=-20V , VGS=10V , RG=1.6,ID=-75A | - | 39 | - | nS |
| Rise Time | Tr | - | 58 | - | nS | |
| Turn-Off Delay Time | Td(off) | - | 152 | - | nS | |
| Fall Time | Tf | - | 46 | - | nS | |
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=-1A , TJ=25 | - | - | -1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | -330 | A | |
| Reverse Recovery Time | Trr | IS=-20A, di/dt=100A/us, TJ=25 | - | 79 | - | nS |
| Reverse Recovery Charge | Qrr | - | 213 | - | nC | |
| Package Dimensions (TOLL) | ||||||
| Symbol | Dimensions In Millimeters | Min. | Nom. | Max. | ||
| A | 2.20 | 2.30 | 2.40 | |||
| b | 0.65 | 0.75 | 0.85 | |||
| C | 0.508 | REF | ||||
| D | 10.25 | 10.40 | 10.55 | |||
| D1 | 2.85 | 3.00 | 3.15 | |||
| E | 9.75 | 9.90 | 10.05 | |||
| E1 | 9.65 | 9.80 | 9.95 | |||
| E2 | 8.95 | 9.10 | 9.25 | |||
| E3 | 7.25 | 7.40 | 7.55 | |||
| e | 1.20 | BSC | ||||
| F | 1.05 | 1.20 | 1.35 | |||
| H | 11.55 | 11.70 | 11.85 | |||
| H1 | 6.03 | 6.18 | 6.33 | |||
| H2 | 6.85 | 7.00 | 7.15 | |||
| H3 | 3.00 | BSC | ||||
| L | 1.55 | 1.70 | 1.85 | |||
| L1 | 0.55 | 0.7 | 0.85 | |||
| L2 | 0.45 | 0.6 | 0.75 | |||
| M | 0.08 | REF. | ||||
| 8 | 10 | 12 | ||||
| K | 4.25 | 4.40 | 4.55 | |||
2504101957_Siliup-SP40P01GTO_C45351226.pdf
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