Fast Switching N Channel Enhancement MOSFET Slkor SL102N10 Designed for Portable and Battery Powered
Key Attributes
Model Number:
SL102N10
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
102A
Operating Temperature -:
-
RDS(on):
6.4mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
21pF@50V
Number:
1 N-channel
Output Capacitance(Coss):
-
Input Capacitance(Ciss):
3.01nF@50V
Pd - Power Dissipation:
125W
Gate Charge(Qg):
32.5nC@4.5V
Mfr. Part #:
SL102N10
Package:
TO-220-3L
Product Description
Product Overview
The SL102N10 is an N-Channel Enhancement Mode MOSFET designed for fast switching speeds and reliable performance. It is ROHS Compliant & Halogen-Free and 100% UIS Tested, making it suitable for various applications including portable equipment and battery-powered systems.
Product Attributes
- Certifications: ROHS Compliant & Halogen-Free
- Testing: 100% UIS Tested
Technical Specifications
| Part Number | Package Type | Shipping | Marking | Drain-Source Voltage (VDSS) | Gate-Source Voltage (VGSS) | Max Junction Temperature (TJ) | Storage Temperature Range (TSTG) | Pulse Drain Current (IDM) | Continuous Drain Current (ID) | Max Power Dissipation (PD) | Avalanche Current (IAS) | Avalanche Energy (EAS) | Thermal Resistance (RJC) | Thermal Resistance (RJA) | Drain-Source On-state Resistance (RDS(ON)-Max) | Forward Transconductance (gfs) | Gate Resistance (RG) | Input Capacitance (Ciss) | Output Capacitance (Coss) | Reverse Transfer Capacitance (Crss) | Turn-on Delay Time (td(ON)) | Turn-on Rise Time (tr) | Turn-off Delay Time (td(OFF)) | Turn-off Fall Time (tf) | Total Gate Charge (Qg) | Gate-Source Charge (Qgs) | Gate-Drain Charge (Qgd) | Diode Forward Voltage (VSD) | Reverse Recovery Time (trr) | Reverse Recovery Charge (Qrr) |
| SL102N10 | TO-220-3L | Tube 50 / Tube | SL102N10 | 100 V | 20 V | 150 C | -55 to 150 C | 122 A | 102 A (TC=25C) 65 A (TC=100C) | 125 W (TC=25C) 50 W (TC=100C) | 18 A | 16 mJ | 1 C/W | 62.5 C/W | 6.4 m (VGS=10V, ID=20A) 9 m (VGS=4.5V, ID=20A) | 3.2 S (VDS=5V, ID=10A) | 1.8 (Freq.=1MHz) | 3010 pF (VDS=50V, Freq.=1MHz) | 540 pF | 21 pF | 11.5 nS | 21 nS | 43 nS | 26 nS | 60 nC (VGS=10V, ID=20A) 32.5 nC (VGS=4.5V, ID=20A) | 8.2 nC | 16.5 nC | 1.1 V (ISD=20A, VGS=0V) | 55.7 nS | 109 nC |
2309281727_Slkor-SL102N10_C18208614.pdf
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