High voltage low RDSon N channel MOSFET Slkor SL18N50F for in power factor correction and switching
Key Attributes
Model Number:
SL18N50F
Product Custom Attributes
Drain To Source Voltage:
500V
Current - Continuous Drain(Id):
18A
Operating Temperature -:
-55℃~+150℃
RDS(on):
320mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
25pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
2.2nF@25V
Pd - Power Dissipation:
60W
Gate Charge(Qg):
45nC@10V
Mfr. Part #:
SL18N50F
Package:
TO-220F
Product Description
Product Overview
The SL18N50F is a high-performance N-Channel Power MOSFET designed for high-frequency switching applications. It features a low RDS(on) of 0.25 (Typ) at VGS=10V, low gate charge, low Crss, 100% avalanche tested, fast switching, and improved dv/dt capability. This makes it ideal for demanding applications like High Frequency Switching Mode Power Supplies and Active Power Factor Correction.
Product Attributes
- Brand: SLKormicro
- Model: SL18N50F
- Package: TO-220F
Technical Specifications
| Parameter | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Absolute Maximum Ratings | |||||
| VDSS (Drain-Source Voltage) | 500 | V | |||
| ID (Drain Current - Continuous, Tc=25C) | 18.0* | A | |||
| ID (Drain Current - Continuous, Tc=100C) | 11.0* | A | |||
| IDM (Drain Current - Pulsed) | (Note1) | 72* | A | ||
| VGSS (Gate-Source Voltage) | 30 | V | |||
| EAS (Single Pulsed Avalanche Energy) | (Note2) | 945 | mJ | ||
| IAR (Avalanche Current) | (Note1) | 18.0 | A | ||
| EAR (Repetitive Avalanche Energy) | (Note1) | 23.5 | mJ | ||
| dv/dt (Peak Diode Recovery dv/dt) | (Note3) | 4.5 | V/ns | ||
| PD (Power Dissipation, TC =25C) | 60 | W | |||
| PD (Derate above 25C) | 0.48 | W/C | |||
| Tj (Operating Junction Temperature) | 150 | C | |||
| Tstg (Storage Temperature Range) | -55 | +150 | C | ||
| Thermal Characteristics | |||||
| RJC (Thermal Resistance, Junction to Case) | 2.08 | C/W | |||
| RJA (Thermal Resistance, Junction to Ambient) | 62.5 | C/W | |||
| Electrical Characteristics | |||||
| BVDSS (Drain-source Breakdown Voltage) | VGS=0V ,ID=250A | 500 | -- | -- | V |
| BVDSS /TJ (Breakdown Voltage Temperature Coefficient) | ID=250A (Referenced to 25C) | -- | 0.63 | -- | V/C |
| IDSS (Zero Gate Voltage Drain Current) | VDS=500V,VGS=0V | -- | -- | 1 | A |
| IDSS (Zero Gate Voltage Drain Current) | VDS=400V,Tc=125C | -- | -- | 10 | A |
| IGSSF (Gate-Body Leakage Current, Forward) | VGS=+30V, VDS=0V | -- | -- | 100 | nA |
| IGSSR (Gate-Body Leakage Current, Reverse) | VGS=-30V, VDS=0V | -- | -- | -100 | nA |
| VGS(th) (Gate Threshold Voltage) | VDS= VGS, ID=250A | 2.0 | -- | 4.0 | V |
| RDS(on) (Static Drain-Source On-Resistance) | VGS=10 V, ID=9.0A | -- | 0.25 | 0.32 | |
| gFS (Forward Transconductance) | VDS= 40 V, ID=9.0A (Note4) | -- | 11 | -- | S |
| Dynamic Characteristics | |||||
| Ciss (Input Capacitance) | VDS=25V,VGS=0V, f=1.0MHz | -- | 2200 | -- | pF |
| Coss (Output Capacitance) | -- | 330 | -- | pF | |
| Crss (Reverse Transfer Capacitance) | -- | 25 | -- | pF | |
| Switching Characteristics | |||||
| td(on) (Turn-On Delay Time) | VDD = 250 V, ID = 18.0A, RG = 25 (Note4,5) | -- | 65 | -- | ns |
| tr (Turn-On Rise Time) | -- | 165 | -- | ns | |
| td(off) (Turn-Off Delay Time) | -- | 95 | -- | ns | |
| tf (Turn-Off Fall Time) | -- | 90 | -- | ns | |
| Qg (Total Gate Charge) | VDS = 400 V, ID =18.0 A, VGS = 10 V (Note4,5) | -- | 45 | -- | nC |
| Qgs (Gate-Source Charge) | -- | 12.5 | -- | nC | |
| Qgd (Gate-Drain Charge) | -- | 19 | -- | nC | |
| Drain-Source Diode Characteristics and Maximum Ratings | |||||
| IS (Maximum Continuous Drain-Source Diode Forward Current) | -- | -- | 18.0 | A | |
| ISM (Maximum Pulsed Drain-Source Diode Forward Current) | -- | -- | 72 | A | |
| VSD (Drain-Source Diode Forward Voltage) | VGS =0V,IS=18.0A | -- | -- | 1.4 | V |
| trr (Reverse Recovery Time) | VGS =0V, IS=18.0A, d IF /dt=100A/s (Note4) | -- | 500 | -- | ns |
| Qrr (Reverse Recovery Charge) | -- | 5.4 | -- | C | |
2409302230_Slkor-SL18N50F_C3019988.pdf
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