High avalanche energy P Channel MOSFET Slkor SLC0D50AP for battery and loading switching applications
Key Attributes
Model Number:
SLC0D50AP
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
50A
RDS(on):
8.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Gate Charge(Qg):
35nC@10V
Mfr. Part #:
SLC0D50AP
Package:
PDFN-8L(5x6)
Product Description
Product Overview
The SLC0D50AP is a P-Channel MOSFET designed for battery and loading switching applications. It features a high-density cell design for ultra-low RDS(ON), fully characterized avalanche voltage and current, and good stability and uniformity with high EAS. The excellent package design ensures good heat dissipation.
Product Attributes
- Brand: SLKORMicro
- Model: SLC0D50AP
- Package: PDFN5X6-8L
Technical Specifications
| Parameter | Condition | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | |||||
| VDS | Drain-Source Voltage | -30 | V | ||
| VGS | Gate-Source Voltage | ±20 | V | ||
| EAS | Single pulse avalanche energy | 77 | mJ | ||
| TJ,TSTG | Storage Temperature Range | -55 | 175 | °C | |
| ID | Continuous Drain Current Tc=25°C | -50 | A | ||
| IDM | Pulse Drain Current Tc=25°C | -210 | A | ||
| IS | Diode Continuous Forward Current Tc=25°C | -50 | A | ||
| PD | Maximum Power Dissipation Mounted on Large Heat Sink Tc=25°C | 65 | W | ||
| RθJA | Thermal Resistance Junction-Ambient | 62.5 | °C/W | ||
| Static Electrical Characteristics @ TJ = 25°C (unless otherwise stated) | |||||
| BV(BR)DSS | Drain-Source Breakdown Voltage VGS=0V, ID=-250μA | -30 | V | ||
| IDSS | Zero Gate Voltage Drain Current VDS=-30V, VGS=0V | -1 | μA | ||
| IGSS | Gate-Body Leakage Current VGS=±20V, VDS=0V | ±100 | nA | ||
| VGS(th) | Gate Threshold Voltage VDS=VGS, ID=-250μA | -1 | -1.5 | -2.2 | V |
| RDS(on) | Drain-Source On-State Resistance VGS=-10V, ID=-15A | 8.5 | 10 | mΩ | |
| Drain-Source On-State Resistance VGS=-4.5V, ID=-10A | 11.7 | 14 | mΩ | ||
| Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise stated) | |||||
| CISS | Input Capacitance VDS=-15V, VGS=0V, f=1MHz | 1988 | pF | ||
| COSS | Output Capacitance | 305 | pF | ||
| CRSS | Reverse Transfer Capacitance | 266 | pF | ||
| Qg | Total Gate Charge | 35 | nC | ||
| Qgs | Gate Source Charge | 5.8 | nC | ||
| Qgd | Gate Drain Charge | 8.8 | nC | ||
| Switching Characteristics @ TJ = 25°C (unless otherwise stated) | |||||
| td(on) | Turn-on Delay Time VDD=-15V, ID=-1A, VGS=-10V, RG=2.5Ω | 11 | nS | ||
| tr | Turn-on Rise Time | 7.7 | nS | ||
| td(off) | Turn-Off Delay Time | 43.3 | nS | ||
| tf | Turn-Off Fall Time | 18 | nS | ||
| VSD | Source-Drain Diode Forward on voltage Tj=25°C, Is=-12A | -1.2 | V | ||
2412171034_Slkor-SLC0D50AP_C42415155.pdf
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