Durable Power MOSFET Slkor SL11N65CF1 Offering 11A Continuous Current and Avalanche Energy Handling
Key Attributes
Model Number:
SL11N65CF1
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
11A
Operating Temperature -:
-55℃~+150℃
RDS(on):
380mΩ@10V,4.0A
Gate Threshold Voltage (Vgs(th)):
5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
32pF
Number:
1 N-channel
Output Capacitance(Coss):
328pF
Pd - Power Dissipation:
-
Input Capacitance(Ciss):
3.11nF
Gate Charge(Qg):
116nC@10V
Mfr. Part #:
SL11N65CF1
Package:
TO-220F
Product Description
Product Overview
This Power MOSFET utilizes Slkor's Advanced Super-Junction technology, engineered to minimize conduction losses, enhance switching performance, and provide robust protection against high energy pulses in avalanche and commutation modes. It is ideally suited for high-efficiency AC/DC power conversion in switching mode operations.
Product Attributes
- Brand: Slkor
- Technology: Advanced Super-Junction
- Testing: 100% avalanche tested
Technical Specifications
| Model | Parameter | Test Conditions | Min | Typ | Max | Units |
| SL11N65CF1 | Drain-Source Voltage (VDSS) | 650 | V | |||
| Drain Current - Continuous (ID) @ TC = 25 | 11 | A | ||||
| Drain Current - Continuous (ID) @ TC = 100 | 7 | A | ||||
| Drain Current - Pulsed (IDM) | (Note 1) | 33 | A | |||
| Gate-Source Voltage (VGSS) | 30 | V | ||||
| Single Pulsed Avalanche Energy (EAS) | (Note 2) | 483 | mJ | |||
| Avalanche Current (IAR) | (Note 1) | 11 | A | |||
| Repetitive Avalanche Energy (EAR) | 6.25 | mJ | ||||
| Peak Diode Recovery dv/dt | (Note 3) | 20 | V/ns | |||
| MOSFET dv/dt | 100 | |||||
| Power Dissipation (PD) @ TC = 25 | 28 | W | ||||
| Operating and Storage Temperature Range (TJ, TSTG) | -55 | +150 | ||||
| Thermal Resistance, Junction-to-Case (RJC) | 4.5 | /W | ||||
| SL11N65CF1 | Drain-Source Breakdown Voltage (BVDSS) | VGS = 0 V, ID = 1 mA | 650 | V | ||
| Zero Gate Voltage Drain Current (IDSS) | VDS = 600 V, VGS = 0 V | 1 | uA | |||
| Gate-Body Leakage Current, Forward (IGSSF) | VGS = 30 V, VDS = 0 V | 100 | nA | |||
| Gate-Body Leakage Current, Reverse (IGSSR) | VGS = -30 V, VDS = 0 V | -100 | nA | |||
| Gate Threshold Voltage (VGS(th)) | VDS = VGS, ID = 0.8mA | 2.5 | 4.5 | V | ||
| Static Drain-Source On-Resistance (RDS(on)) | VGS = 10 V, ID = 4.0 A | 318 | 380 | m | ||
| Input Capacitance (Ciss) | VDS = 400 V, VGS = 0 V, f = 250 KHz | 628 | pF | |||
| Output Capacitance (Coss) | 20 | pF | ||||
| Turn-On Delay Time (td(on)) | VDD = 400 V, ID = 4.0A, RG = 10 (Note 4, 5) | 8 | ns | |||
| Total Gate Charge (Qg) | VDS =400 V, ID = 4.0A, VGS = 10 V (Note 4, 5) | 15.5 | nC |
2309281727_Slkor-SL11N65CF1_C18208655.pdf
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