Low noise wideband VCO tuning varactor diode SKYWORKS SMV1702-011LF with SOD 323 package and MSL1 rating
Product Overview
The Skyworks SMV1702-011LF is a silicon hyperabrupt junction tuning varactor diode engineered for battery-operated applications. It is specifically designed for low-noise and wideband UHF and VHF Voltage Controlled Oscillators (VCOs), as well as high-volume, low-voltage VCOs. Its key advantages include low series resistance and a high capacitance ratio, making it suitable for wireless systems. The device is housed in a small footprint SOD-323 package and is rated MSL1 at 260 C.
Product Attributes
- Brand: Skyworks Solutions, Inc.
- Product Line: Hyperabrupt Junction Tuning Varactor
- Package Type: SOD-323
- Moisture Sensitivity Level: MSL1 (260 C per JEDEC J-STD-020)
- Compliance: RoHS-compliant (Pb-free denoted by "LF" or Green symbol)
- ESD Classification: Class 0 Human Body Model (HBM)
Technical Specifications
| Parameter | Symbol | Test Condition | Minimum | Typical | Maximum | Units |
|---|---|---|---|---|---|---|
| Reverse voltage | VR | 10 | V | |||
| Forward current | IF | 20 | mA | |||
| Power dissipation | PDIS | 250 | mW | |||
| Operating temperature | TOP | -55 | +125 | C | ||
| Storage temperature | TSTG | -55 | +150 | C | ||
| Reverse current | IR | VR = 8 V | <0.01 | 20 | nA||
| Reverse breakdown voltage | VBR | IR = 10 A | 10 | V|||
| Capacitance | CT | F = 1 MHz, VR = 0.1 V | 90 | 110 | pF||
| F = 1 MHz, VR = 2 V | 41 | 50 | pF||||
| F = 1 MHz, VR = 4 V | 22 | 29 | pF||||
| Capacitance ratio | CTR | CT (0.1 V/4 V) | 3.6 | 4.0 | ||
| Series resistance | RS | VR = 5 V, F = 470 MHz | 0.45 | 1.25 |
| Voltage (VR) (V) | Typical Capacitance (CT) (pF) |
|---|---|
| 0 | 103.3 |
| 1 | 65.1 |
| 2 | 46.38 |
| 3 | 33.57 |
| 4 | 24.20 |
| 5 | 18.08 |
| 6 | 15.01 |
| 7 | 13.80 |
| 8 | 13.21 |
| 9 | 12.84 |
| 10 | 12.58 |
| Parameter | Description | Unit | Value | Default |
|---|---|---|---|---|
| IS | Saturation current | A1e14 | ||
| RS | Series resistance | 0.5 | ||
| N | Emission coefficient | 1 | ||
| TT | Transit time | s|||
| CJO | Zero-bias junction capacitance | F92.65e12 | 0 | |
| VJ | Junction potential | V25 | 1 | |
| M | Grading coefficient | 12.76 | 0.5 | |
| EG | Energy gap | eV1.11 | ||
| XTI | Saturation current temperature exponent | 3 | ||
| KF | Flicker noise coefficient | A0 | ||
| AF | Flicker noise exponent | 1 | ||
| FC | Forward-bias depletion capacitance coefficient | 0.5 | ||
| BV | Reverse breakdown voltage | V18 | ||
| IBV | Current at reverse breakdown voltage | A1e5 | 1e3 | |
| ISR | Recombination current parameter | A0 | ||
| NR | Emission coefficient for ISR | 2 | ||
| IKF | High-injection knee current | A|||
| NBV | Reverse breakdown ideality factor | 1 | ||
| IBVL | Low-level reverse breakdown knee current | A0 | ||
| NBVL | Low-level reverse breakdown ideality factor | 1 | ||
| TNOM | Nominal ambient temperature | C27 | ||
| FFE | Flicker noise frequency exponent | 1 | ||
| CPKG | Package capacitance | pF10.36 | ||
| LS | Package inductance | nH1.5 |
2410311212_SKYWORKS-SMV1702-011LF_C3272655.pdf
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