surface mount 20V P Channel MOSFET Siliup SP20P35T2 ideal for battery switch and DC DC converter designs
Key Attributes
Model Number:
SP20P35T2
Product Custom Attributes
Drain To Source Voltage:
20V
Configuration:
-
Current - Continuous Drain(Id):
4.5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
57mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
900mV@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
113pF
Number:
1 P-Channel
Output Capacitance(Coss):
127pF
Pd - Power Dissipation:
1.7W
Input Capacitance(Ciss):
960pF
Gate Charge(Qg):
13.6nC@4.5V
Mfr. Part #:
SP20P35T2
Package:
SOT-23
Product Description
Product Overview
The SP20P35T2 is a 20V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. This device offers high power and current handling capabilities, making it suitable for applications such as battery switches and DC/DC converters. It is available in a surface mount SOT-23 package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Line: SP Series
- Package Type: SOT-23
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | -20 | V | |||
| RDS(on) | @-4.5V | 35 | m | |||
| RDS(on) | @-2.5V | 45 | m | |||
| Continuous Drain Current | ID | -4.5 | A | |||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDSS | -20 | V | |||
| Gate-Source Voltage | VGSS | 12 | V | |||
| Continuous Drain Current | ID | -4.5 | A | |||
| Pulse Drain Current | IDM | Tested | -18 | A | ||
| Power Dissipation | PD | 1 | W | |||
| Thermal Resistance Junction-to-Ambient | RJA | 125 | C/W | |||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | C | ||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=-250A | -20 | V | ||
| Drain-Source Leakage Current | IDSS | VDS=-16V , VGS=0V | -1 | uA | ||
| Gate-Source Leakage Current | IGSS | VGS=12V , VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS , ID=-250A | -0.4 | -0.75 | -0.9 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-4.5V, ID=-3.3A | 35 | 57 | m | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-2.5V, ID=-2.8A | 45 | 76 | m | |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=-15V , VGS=0V , f=1MHz | 686 | pF | ||
| Output Capacitance | Coss | 90.8 | pF | |||
| Reverse Transfer Capacitance | Crss | 80.4 | pF | |||
| Total Gate Charge | Qg | VDS=-15V , VGS=-4.5V , ID=-3A | 9.7 | nC | ||
| Gate-Source Charge | Qgs | 2.05 | nC | |||
| Gate-Drain Charge | Qg d | 2.43 | nC | |||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD=-10V VGS=-4.5V , RG=3.3, ID=3A | 4.8 | nS | ||
| Turn-On Rise Time | tr | 9.6 | nS | |||
| Turn-Off Delay Time | td(off) | 52 | nS | |||
| Turn-Off Fall Time | tf | 8.4 | nS | |||
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=-1A , TJ=25 | -1.2 | V | ||
| Package Information (SOT-23) | ||||||
| Symbol | Dimensions (mm) | Min. | Max. | |||
| A | 0.90 | 1.15 | ||||
| A1 | 0.00 | 0.10 | ||||
| A2 | 0.90 | 1.05 | ||||
| b | 0.30 | 0.50 | ||||
| c | 0.08 | 0.15 | ||||
| D | 2.80 | 3.00 | ||||
| E | 1.20 | 1.40 | ||||
| E1 | 2.25 | 2.55 | ||||
| e | (REF.) | 0.95 | ||||
| e1 | 1.80 | 2.00 | ||||
| L | (REF.) | 0.55 | ||||
| L1 | 0.30 | 0.50 | ||||
| 0 | 8 | |||||
| Order Information | ||||||
| Device | Package | Unit/Tape | ||||
| SP20P35T2 | SOT-23 | 3000 | ||||
2504101957_Siliup-SP20P35T2_C41354951.pdf
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