Low RDS on 20V N Channel MOSFET Slkor SL2302M for Load Power Switching and Battery Management Applications

Key Attributes
Model Number: SL2302M
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
1.2A
Operating Temperature -:
-55℃~+150℃
RDS(on):
215mΩ@1.8V
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
15pF
Number:
1 N-channel
Output Capacitance(Coss):
20pF
Input Capacitance(Ciss):
120pF
Pd - Power Dissipation:
150mW
Mfr. Part #:
SL2302M
Package:
SOT-723
Product Description

Product Overview

This 20V N-Channel MOSFET features a surface mount package, low RDS(on), and operates at low logic level gate drive with ESD protection. It is designed for load/power switching, interfacing switching, battery management for ultra-small portable electronics, and logic level shifting applications.

Product Attributes

  • Brand: SLKORMicro
  • Model: SL2302M
  • Package: SOT-723

Technical Specifications

ParameterSymbolTest ConditionMin.Typ.Max.Unit
Absolute Maximum RatingsVDS20V
VGS±12V
ID1.2A
IDM1.8A
PD(Ta=25)0.15W
Electrical CharacteristicsV(BR)DSSVGS = 0V, ID =250µA20V
IDSSVDS =16V,VGS = 0V1µA
IGSSVGS =±10V, VDS = 0V±10µA
VGS(th)VDS =VGS, ID =250µA0.30.651V
RDS(on)VGS = 4.5V, ID = 1.2A90110
VGS =2.5V, ID = 0.8A115150
CissVDS =16V,VGS =0V, f=1MHz79120pF
CossVDS =16V,VGS =0V, f=1MHz1320pF
CrssVDS =16V,VGS =0V, f=1MHz915pF
Switching Characteristicstd(on)VGS=4.5V,VDS=10V, ID =500mA,RGEN=10Ω6.7ns
trVGS=4.5V,VDS=10V, ID =500mA,RGEN=10Ω4.8ns
td(off)VGS=4.5V,VDS=10V, ID =500mA,RGEN=10Ω17.3ns
tfVGS=4.5V,VDS=10V, ID =500mA,RGEN=10Ω7.4ns
Source-Drain Diode CharacteristicsVSDIS=0.5A, VGS = 0V0.71.3V

2409302203_Slkor-SL2302M_C2943027.pdf

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