1200V Drain Source Voltage Silicon Carbide MOSFET Slkor SL19N120A with Fast Recovery Intrinsic Diode
Key Attributes
Model Number:
SL19N120A
Product Custom Attributes
Drain To Source Voltage:
1.2kV
Current - Continuous Drain(Id):
19A
RDS(on):
160mΩ@20V
Operating Temperature -:
-55℃~+175℃@(Tj)
Gate Threshold Voltage (Vgs(th)):
2.9V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
2pF
Input Capacitance(Ciss):
895pF
Pd - Power Dissipation:
134W
Gate Charge(Qg):
43nC
Mfr. Part #:
SL19N120A
Package:
TO-247-3
Product Description
Product Overview
The SL19N120A is a Silicon Carbide (SiC) MOSFET designed for high-voltage applications. It offers low on-resistance, high switching speed with small parasitic capacitance, and a high operating junction temperature. Key features include a fast-recovery intrinsic diode, making it suitable for demanding power electronics systems.
Product Attributes
- Brand: SLKORMicro
- Material: Silicon Carbide (SiC)
- Package: TO-247-3
- Origin: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Symbol | Parameter | Typical Value | Unit | Test Condition | Notes |
| Maximum Ratings (TC=25C, unless otherwise specified) | |||||
| VDS | Drain-Source Voltage | 1200 | V | VGS=0V, ID=100A | |
| VGS | Gate-Source Voltage | -5 to 20 | V | Recommended operating range | |
| ID | Continuous Drain Current | 19 | A | VGS=20V, TC=25C | Fig. 21 |
| ID | Continuous Drain Current | 14 | A | VGS=20V, TC=100C | |
| IDM | Pulsed Drain Current | 48 | A | Determined by device safe operating area | Fig. 24 |
| PTOT | Total Power Dissipation | 134 | W | TC=25C | Fig. 22 |
| Tstg | Storage Temperature Range | -55 to 175 | C | ||
| TJ | Operating Junction Temperature Range | -55 to 175 | C | ||
| TL | Soldering Temperature | 260 | C | Wave soldering at leads, 1.6 mm from case, 10s max | |
| Thermal Characteristics | |||||
| R(J-C) | Thermal Resistance Junction-to-Case | 1.122 | C/W | Fig. 23 | |
| Electrical Characteristics (TC=25C, unless otherwise specified) | |||||
| IDSS | Drain-Source Leakage Current at Cut-off | 5 to 100 | A | VDS=1200V, VGS=0V | |
| IGSS | Gate Leakage Current | 1 | A | VDS=0V, VGS=-5~20V | |
| VTH | Threshold Voltage | 2.9 | V | VGS=VDS, ID=1.9mA | Fig. 8, 9 |
| VTH | Threshold Voltage | 1.9 | V | VGS=VDS, ID=1.9mA @ TC=175C | |
| RON | On-Resistance | 160 to 195 | m | VGS=20V, ID=10A @TJ=25C | Fig. 4, 5, 6, 7 |
| RON | On-Resistance | 285 | m | VGS=20V, ID=10A @TJ=175C | |
| Ciss | Input Capacitance | 895 | pF | VDS=800V, VGS=0V, f=1MHz, VAC=25mV | Fig. 16 |
| Coss | Output Capacitance | 43 | pF | ||
| Crss | Reverse Transfer Capacitance | 2 | pF | ||
| Eoss | Output Capacitance Stored Energy | 4.2 | J | Fig. 17 | |
| Qg | Total Gate Charge | 43 | nC | VDS=800V, ID=10A, VGS=-5 to 20V | Fig. 18 |
| Qgs | Gate-Source Charge | 9 | nC | ||
| Qgd | Gate-Drain Charge | 19 | nC | ||
| Rg | Gate Input Resistance | 8.5 | f=1MHz | ||
| EON | Turn-on Energy | 204 | J | VDS=800V, ID=10A, VGS=-2 to 20V, RG(ext)=3.3, L=450H | Fig. 19, 20 |
| EOFF | Turn-off Energy | 34.4 | J | ||
| td(on) | Turn-on Delay Time | 15.2 | ns | ||
| tr | Rise Time | 14.4 | ns | ||
| td(off) | Turn-off Delay Time | 11.3 | ns | ||
| tf | Fall Time | 13.1 | ns | ||
| Diode Characteristics (TC=25C, unless otherwise specified) | |||||
| VSD | Forward Voltage | 4.1 | V | ISD=5A, VGS=0V | Fig. 10, 11, 12 |
| VSD | Forward Voltage | 3.7 | V | ISD=5A, VGS=0V, TJ=175C | |
| trr | Reverse Recovery Time | 33.2 | ns | VGS=-2V/+20V, ISD=10A, VR=800V, di/dt=1000A/us, RG(ext)=13 | |
| Qrr | Reverse Recovery Charge | 101.5 | nC | ||
| IRRM | Peak Reverse Recovery Current | 5.6 | A | ||
Features
- High voltage, low on-resistance
- High speed, small parasitic capacitance
- High operating junction temperature
- Fast recovery body diode
Applications
- Photovoltaic inverters
- UPS power supplies
- Motor drives
- High voltage DC/DC converters
- Switching power supplies
2106062138_Slkor-SL19N120A_C2760944.pdf
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