900V N Channel Planar MOSFET Siliup SP6N90TQ Fast Switching Low Gate Charge Ideal for DC DC Converters
Key Attributes
Model Number:
SP6N90TQ
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
900V
Current - Continuous Drain(Id):
6A
Operating Temperature -:
-55℃~+150℃
RDS(on):
2Ω@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
11pF
Number:
-
Output Capacitance(Coss):
115pF
Input Capacitance(Ciss):
1.35nF
Pd - Power Dissipation:
167W
Gate Charge(Qg):
30nC@10V
Mfr. Part #:
SP6N90TQ
Package:
TO-220-3L-C
Product Description
Product Overview
The SP6N90TQ is a 900V N-Channel Planar MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for high-frequency switching applications. It features fast switching speeds, low gate charge, and low Rdson, making it ideal for DC-DC converters and synchronous rectification. The device has undergone 100% single pulse avalanche energy testing.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Type: N-Channel Planar MOSFET
- Device Code: 6N90
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 900 | V | |||
| RDS(on)TYP | RDS(on) | 10V | 2 | |||
| Continuous Drain Current | ID | Tc=25 | 6 | A | ||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 900 | V | |||
| Gate-Source Voltage | VGS | 30 | V | |||
| Continuous Drain Current (Tc=25) | ID | 6 | A | |||
| Continuous Drain Current (Tc=100) | ID | 4 | A | |||
| Pulsed Drain Current | IDM | 24 | A | |||
| Single Pulse Avalanche Energy | EAS | 405 | mJ | |||
| Power Dissipation (Tc=25) | PD | 167 | W | |||
| Thermal Resistance Junction-to-Case | RJC | 0.75 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | ID = 250A, VGS = 0V | 900 | V | ||
| Drain Cut-Off Current | IDSS | VDS = 720V, VGS = 0V | 1 | A | ||
| Gate Leakage Current | IGSS | VGS = 30V, VDS = 0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250A | 3.0 | 4.0 | 5.0 | V |
| Drain-Source ON Resistance | RDS(ON) | VGS = 10V, ID = 3A | 2 | 2.4 | ||
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS =25V, VGS = 0V, f = 1.0MHz | 1350 | pF | ||
| Output Capacitance | Coss | 115 | pF | |||
| Reverse Transfer Capacitance | Crss | 11 | pF | |||
| Total Gate Charge | Qg | VDS=720V , VGS=10V , ID=6A | 30 | nC | ||
| Gate-Source Charge | Qgs | 9 | nC | |||
| Gate-Drain Charge | Qg | 12 | nC | |||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD=450V , VGS=10V , RG=2.5, ID=6A | 36 | nS | ||
| Rise Time | tr | 90 | nS | |||
| Turn-Off Delay Time | td(off) | 54 | nS | |||
| Fall Time | tf | 61 | nS | |||
| Drain-Source Body Diode Characteristics | ||||||
| Source-Drain Diode Forward Voltage | VSD | IS = 1A, VGS = 0V | 1.2 | V | ||
| Maximum Body-Diode Continuous Current | IS | 6 | A | |||
| Body Diode Reverse Recovery Time | Trr | IS = 6A, dIF/dt = 100A/us | 635 | nS | ||
| Body Diode Reverse Recovery Charge | Qrr | 7 | uC | |||
| Package Information | ||||||
| Package Type | TO-220-3L | |||||
| Pinout | (1:G 2:D 3:S) | |||||
| Dimensions (Millimeters) | A | 2.700 | 2.900 | |||
| B | 6.400 | 6.800 | ||||
| C | 0.300 | 0.700 | ||||
| D | 11 | 15 | ||||
| E | 1.1 | 1.5 | ||||
| F | 0.7 | 0.9 | ||||
| G | 2.54 TYP | |||||
| W | 9.8 | 10.2 | ||||
| H | 4.3 | 4.7 | ||||
| H1 | 2.2 | 2.5 | ||||
| K | 2.7 | 3.1 | ||||
| L | 14.8 | 16.8 | ||||
| L1 | 9.0 | 9.4 | ||||
| N | 1.2 | 1.4 | ||||
| P | 12.7 | 13.3 | ||||
| P1 | 7.6 | 8.2 | ||||
| Q | 3.5 | 3.7 | ||||
2504101957_Siliup-SP6N90TQ_C42372393.pdf
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