Surface Mount Silicon NPN Darlington Power Transistor Slkor MJD122D for General Purpose Applications

Key Attributes
Model Number: MJD122D
Product Custom Attributes
Mfr. Part #:
MJD122D
Package:
TO-252
Product Description

Product Overview

The MJD122D is a Silicon NPN Darlington Power Transistor designed for general purpose amplifier and low speed switching applications. It features a low collector-emitter saturation voltage, high DC current gain, and lead forming for surface mount applications, ensuring robust device performance and reliable operation with minimum lot-to-lot variations.

Product Attributes

  • Brand: slkormicro
  • Model: MJD122D

Technical Specifications

Symbol Parameter Conditions Value Unit
Absolute Maximum Ratings (Ta=25)
VCBO Collector-Base Voltage 100 V
VCEO Collector-Emitter Voltage 100 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current-Continuous 8 A
PC Total Power Dissipation @ Ta=25 1.75 W
PC Collector Power Dissipation TC=25 20 W
Rth j-a Thermal Resistance, Junction to Ambient 6.25 /W
TJ Junction Temperature 150
Tstg Storage Temperature Range -55~150
Electrical Characteristics (TC=25 unless otherwise specified)
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 100 V
VCE(sat)-1 Collector-Emitter Saturation Voltage IC=4A; IB= 16mA 2.0 V
VCE(sat)-2 Collector-Emitter Saturation Voltage IC=8A; IB= 80mA 4.0 V
VBE(sat) Base-Emitter Saturation Voltage IC=8A; IB= 80mA 4.5 V
VBE(ON) Base-Emitter voltage IC= 4A; VCE= 4V 2.8 V
ICEO Collector Cutoff Current VCE=50V; IE= 0 10 uA
IEBO Emitter Cutoff Current VEB=5V; IC= 0 2 mA
hFE1 DC Current Gain IC= 4A; VCE= 4V 1000~12000
hFE2 DC Current Gain IC=8A; VCE= 4V 100
fT Current-GainBandwidth Product IC=3A; VCE= 4V 4 MHz
COB Output Capacitance IE=0; VCB= 10V; f= 1.0MHz 200 pF

2409302301_Slkor-MJD122D_C5155434.pdf

Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.