N Channel MOSFET Siliup SP010N70T8 with 85m RDS on at 4.5V and 6A Continuous Drain Current Rating
Product Overview
The SP010N70T8 is a 100V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It offers high power and current handling capabilities in a surface mount SOT-89 package, making it suitable for applications such as battery switches and DC/DC converters. Key electrical characteristics include a low RDS(on) of 70m at 10V and 85m at 4.5V, with a continuous drain current of 6A.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Type: N-Channel MOSFET
- Package Type: SOT-89
- Device Code: 1006
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| V(BR)DSS | V(BR)DSS | 100 | V | |||
| RDS(on)TYP | RDS(on) | @10V | 70 | m | ||
| RDS(on)TYP | RDS(on) | @4.5V | 85 | m | ||
| ID | ID | 6 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | (Ta=25, unless otherwise noted) | 100 | V | ||
| Gate-Source Voltage | VGSS | (Ta=25, unless otherwise noted) | 20 | V | ||
| Continuous Drain Current | ID | (Ta=25, unless otherwise noted) | 6 | A | ||
| Pulse Drain Current | IDM | (Ta=25, unless otherwise noted) | 24 | A | ||
| Power Dissipation | PD | (Ta=25, unless otherwise noted) | 1.5 | W | ||
| Thermal Resistance Junction-to-Ambient | RJA | (Ta=25, unless otherwise noted) | 83 | C/W | ||
| Storage Temperature Range | TSTG | (Ta=25, unless otherwise noted) | -55 | 150 | C | |
| Operating Junction Temperature Range | TJ | (Ta=25, unless otherwise noted) | -55 | 150 | C | |
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250A | 100 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=80V , VGS=0V | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS , ID=250A | 1.2 | 1.8 | 2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V, ID=5A | - | 70 | 100 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V, ID=3A | - | 85 | 120 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=15V , VGS=0V , f=1MHz | - | 900 | - | pF |
| Output Capacitance | Coss | VDS=15V , VGS=0V , f=1MHz | - | 35 | - | pF |
| Reverse Transfer Capacitance | Crss | VDS=15V , VGS=0V , f=1MHz | - | 30 | - | pF |
| Total Gate Charge | Qg | VDS=50V , VGS=10V , ID=5A | - | 22 | - | nC |
| Gate-Source Charge | Qgs | VDS=50V , VGS=10V , ID=5A | - | 2.9 | - | |
| Gate-Drain Charge | Qgd | VDS=50V , VGS=10V , ID=5A | - | 5.4 | - | |
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD=50V VGS=10V , RG=3, ID=5A | - | 3.9 | - | nS |
| Turn-On Rise Time | tr | VDD=50V VGS=10V , RG=3, ID=5A | - | 26 | - | |
| Turn-Off Delay Time | td(off) | VDD=50V VGS=10V , RG=3, ID=5A | - | 16.2 | - | |
| Turn-Off Fall Time | tf | VDD=50V VGS=10V , RG=3, ID=5A | - | 8.9 | - | |
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Package Dimensions (SOT-89) | ||||||
| Symbol | Dimensions (mm) Min. | Dimensions (mm) Max. | ||||
| A | 1.400 | 1.600 | ||||
| b | 0.320 | 0.520 | ||||
| b1 | 0.400 | 0.580 | ||||
| c | 0.350 | 0.440 | ||||
| D | 4.400 | 4.600 | ||||
| D1 | 1.550 (REF) | |||||
| D2 | 1.750 (REF) | |||||
| E | 2.300 | 2.600 | ||||
| E1 | 3.940 | 4.250 | ||||
| E2 | 1.900 (REF) | |||||
| e | 1.500 (TYP) | |||||
| e1 | 3.000 (TYP) | |||||
| L | 0.900 | 1.200 | ||||
| 45 | ||||||
2504101957_Siliup-SP010N70T8_C41354892.pdf
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