N Channel MOSFET Siliup SP010N70T8 with 85m RDS on at 4.5V and 6A Continuous Drain Current Rating

Key Attributes
Model Number: SP010N70T8
Product Custom Attributes
Drain To Source Voltage:
100V
Configuration:
-
Current - Continuous Drain(Id):
6A
Operating Temperature -:
-55℃~+150℃
RDS(on):
70mΩ@10V;85mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.8V@250uA
Reverse Transfer Capacitance (Crss@Vds):
30pF
Number:
1 N-channel
Output Capacitance(Coss):
35pF
Pd - Power Dissipation:
4W
Input Capacitance(Ciss):
900pF
Gate Charge(Qg):
22nC@10V
Mfr. Part #:
SP010N70T8
Package:
SOT-89-3L
Product Description

Product Overview

The SP010N70T8 is a 100V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It offers high power and current handling capabilities in a surface mount SOT-89 package, making it suitable for applications such as battery switches and DC/DC converters. Key electrical characteristics include a low RDS(on) of 70m at 10V and 85m at 4.5V, with a continuous drain current of 6A.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Product Type: N-Channel MOSFET
  • Package Type: SOT-89
  • Device Code: 1006

Technical Specifications

Parameter Symbol Conditions Min. Typ. Max. Unit
Product Summary
V(BR)DSS V(BR)DSS 100 V
RDS(on)TYP RDS(on) @10V 70 m
RDS(on)TYP RDS(on) @4.5V 85 m
ID ID 6 A
Absolute Maximum Ratings
Drain-Source Voltage VDSS (Ta=25, unless otherwise noted) 100 V
Gate-Source Voltage VGSS (Ta=25, unless otherwise noted) 20 V
Continuous Drain Current ID (Ta=25, unless otherwise noted) 6 A
Pulse Drain Current IDM (Ta=25, unless otherwise noted) 24 A
Power Dissipation PD (Ta=25, unless otherwise noted) 1.5 W
Thermal Resistance Junction-to-Ambient RJA (Ta=25, unless otherwise noted) 83 C/W
Storage Temperature Range TSTG (Ta=25, unless otherwise noted) -55 150 C
Operating Junction Temperature Range TJ (Ta=25, unless otherwise noted) -55 150 C
Electrical Characteristics
Drain-Source Breakdown Voltage BVDSS VGS=0V , ID=250A 100 - - V
Drain-Source Leakage Current IDSS VDS=80V , VGS=0V - - 1 uA
Gate-Source Leakage Current IGSS VGS=20V , VDS=0V - - 100 nA
Gate Threshold Voltage VGS(th) VDS=VGS , ID=250A 1.2 1.8 2.5 V
Static Drain-Source On-Resistance RDS(ON) VGS=10V, ID=5A - 70 100 m
Static Drain-Source On-Resistance RDS(ON) VGS=4.5V, ID=3A - 85 120 m
Dynamic Characteristics
Input Capacitance Ciss VDS=15V , VGS=0V , f=1MHz - 900 - pF
Output Capacitance Coss VDS=15V , VGS=0V , f=1MHz - 35 - pF
Reverse Transfer Capacitance Crss VDS=15V , VGS=0V , f=1MHz - 30 - pF
Total Gate Charge Qg VDS=50V , VGS=10V , ID=5A - 22 - nC
Gate-Source Charge Qgs VDS=50V , VGS=10V , ID=5A - 2.9 -
Gate-Drain Charge Qgd VDS=50V , VGS=10V , ID=5A - 5.4 -
Switching Characteristics
Turn-On Delay Time td(on) VDD=50V VGS=10V , RG=3, ID=5A - 3.9 - nS
Turn-On Rise Time tr VDD=50V VGS=10V , RG=3, ID=5A - 26 -
Turn-Off Delay Time td(off) VDD=50V VGS=10V , RG=3, ID=5A - 16.2 -
Turn-Off Fall Time tf VDD=50V VGS=10V , RG=3, ID=5A - 8.9 -
Source-Drain Diode Characteristics
Diode Forward Voltage VSD VGS=0V , IS=1A , TJ=25 - - 1.2 V
Package Dimensions (SOT-89)
Symbol Dimensions (mm) Min. Dimensions (mm) Max.
A 1.400 1.600
b 0.320 0.520
b1 0.400 0.580
c 0.350 0.440
D 4.400 4.600
D1 1.550 (REF)
D2 1.750 (REF)
E 2.300 2.600
E1 3.940 4.250
E2 1.900 (REF)
e 1.500 (TYP)
e1 3.000 (TYP)
L 0.900 1.200
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2504101957_Siliup-SP010N70T8_C41354892.pdf

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