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quality Low RDS on 85V N Channel MOSFET Siliup SP85N04AGHTD Suitable for DC DC Converters and Power Switching factory
quality Low RDS on 85V N Channel MOSFET Siliup SP85N04AGHTD Suitable for DC DC Converters and Power Switching factory

Low RDS on 85V N Channel MOSFET Siliup SP85N04AGHTD Suitable for DC DC Converters and Power Switching

Key Attributes
Model Number: SP85N04AGHTD
Product Custom Attributes
Drain To Source Voltage:
85V
Current - Continuous Drain(Id):
130A
RDS(on):
4.5mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
18pF
Number:
1 N-channel
Output Capacitance(Coss):
677pF
Input Capacitance(Ciss):
3.451nF
Pd - Power Dissipation:
140W
Gate Charge(Qg):
26nC@10V
Mfr. Part #:
SP85N04AGHTD
Package:
TO-263-3L
Product Description

Product Overview

The SP85N04AGHTD is an 85V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on), enabled by advanced split gate trench technology. This device is 100% tested for single pulse avalanche energy and is designed for power switching applications, PWM applications, and DC-DC converters. It comes in a TO-263 package.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Technology: Advanced Split Gate Trench Technology
  • Package: TO-263
  • Device Code: 85N04AGH

Technical Specifications

Parameter Symbol Conditions Min. Typ. Max. Units
Product Summary
Drain-Source Voltage V(BR)DSS 85 V
RDS(on) RDS(on) @10V 3.5 m
Continuous Drain Current ID 130 A
Absolute Maximum Ratings (Ta=25, unless otherwise noted)
Drain-Source Voltage VDS 85 V
Gate-Source Voltage VGS 20 V
Continuous Drain Current (Tc=25) ID 130 A
Pulsed Drain Current IDM 2 520 A
Single Pulse Avalanche Energy EAS 3 756 mJ
Total Power Dissipation (Tc=25) PD 4 140 W
Thermal Resistance Junction-Case RJC 1 0.89 /W
Storage Temperature Range TSTG -55 150
Operating Junction Temperature Range TJ -55 150
Electrical Characteristics (Ta=25, unless otherwise noted)
Drain-Source Breakdown Voltage BVDSS VGS=0V , ID=250uA 85 --- --- V
Drain-Source Leakage Current IDSS VDS=85V , VGS=0V , TJ=25 --- --- 1 uA
Gate-Source Leakage Current IGSS VGS=20V , VDS=0V --- --- 100 nA
Gate Threshold Voltage VGS(th) VGS=VDS , ID =250uA 2.0 2.9 4.0 V
Static Drain-Source On-Resistance RDS(ON) VGS=10V , ID=20A 2 --- 3.5 4.5 m
Dynamic Characteristics
Input Capacitance Ciss VDS=40V , VGS=0V , f=1MHz --- 3451 --- pF
Output Capacitance Coss --- 677 --- pF
Reverse Transfer Capacitance Crss --- 18 --- pF
Switching Characteristics
Total Gate Charge Qg VDS=40V , VGS=10V , ID=20A --- 26 --- nC
Gate-Source Charge Qgs --- 10 --- nC
Gate-Drain Charge Qgd --- 11 --- nC
Turn-On Delay Time Td(on) VDD=40V , VGS=10V , RG=6 , ID=20A --- 16 --- ns
Rise Time Tr --- 35 --- ns
Turn-Off Delay Time Td(off) --- 33 --- ns
Fall Time Tf --- 22 --- ns
Source-Drain Diode Characteristics
Diode Forward Voltage VSD VGS=0V , IS=1A , TJ=25 2 --- --- 1.2 V

Notes:

  • 1 Tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
  • 2 Tested by pulsed, pulse width 300s, duty cycle 2%.
  • 3 EAS data shows Max. rating. Test condition: VDD=42.5V, VGS=10V, L=0.5mH, IAS=55A.
  • 4 Power dissipation is limited by 150 junction temperature.

2410121447_Siliup-SP85N04AGHTD_C22466790.pdf
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