SP40N02BGNK 40V N Channel Power MOSFET Featuring Fast Switching and Low RDSon for Power Applications
Product Overview
The SP40N02BGNK is a 40V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for power switching applications, PWM applications, and DC-DC converters. It features fast switching, low gate charge, and low RDS(on) due to its advanced split gate trench technology. The device is 100% tested for single pulse avalanche energy.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP40N02BGNK
- Device Code: 40N02BG
- Technology: Advanced Split Gate Trench Technology
- Channel Type: N-Channel
- Package: PDFN5X6-8L
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Units |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| V(BR)DSS | 40 | V | ||||
| RDS(on) | @10V | 2.3 | m | |||
| RDS(on) | @4.5V | 3.3 | m | |||
| ID | 120 | A | ||||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 40 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current (Tc=25) Silicon Limit | ID | 135 | A | |||
| Continuous Drain Current (Tc=25) Package Limit | ID | 120 | A | |||
| Continuous Drain Current (Tc=100) | ID | 80 | A | |||
| Pulsed Drain Current | IDM | 480 | A | |||
| Single Pulse Avalanche Energy | EAS | 420 | mJ | |||
| Power Dissipation (Tc=25) | PD | 85 | W | |||
| Thermal Resistance Junction-to-Case | RJC | 1.47 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 40 | - | - | V |
| Drain Cut-Off Current | IDSS | VDS=32V , VGS=0V , TJ=25 | - | - | 1 | uA |
| Gate Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 1.0 | 1.8 | 2.5 | V |
| Drain-Source ON Resistance | RDS(ON) | VGS=10V , ID=20A | - | 2.3 | 2.8 | m |
| Drain-Source ON Resistance | RDS(ON) | VGS=4.5V , ID=10A | - | 3.3 | 4 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=20V , VGS=0V , f=1MHz | - | 2868 | - | pF |
| Output Capacitance | Coss | - | 1006 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 51 | - | pF | |
| Total Gate Charge | Qg | VDS=20V , VGS=10V , ID=85A | - | 57 | - | nC |
| Gate-Source Charge | Qgs | - | 9.5 | - | ||
| Gate-Drain Charge | Qg d | - | 11 | - | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD=20V, VGS=10V, RG=1.6, ID=85A | - | 10 | - | nS |
| Rise Time | tr | - | 3 | - | ||
| Turn-Off Delay Time | td(off) | - | 35 | - | ||
| Fall Time | tf | - | 4 | - | ||
| Drain-Source Body Diode Characteristics | ||||||
| Source-Drain Diode Forward Voltage | VSD | IS = 1A, VGS = 0V | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 120 | A | |
| Reverse Recovery Time | Trr | IS=50A, di/dt=100A/us, TJ=25 | - | 18 | - | nS |
| Reverse Recovery Charge | Qrr | - | 31 | - | nC | |
Package Information (PDFN5X6-8L)
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
|---|---|---|---|---|
| Min. | Max. | Min. | Max. | |
| A | 0.900 | 1.000 | 0.035 | 0.039 |
| A3 | 0.254REF. (0.010REF.) | |||
| D | 4.944 | 5.096 | 0.195 | 0.201 |
| E | 5.974 | 6.126 | 0.235 | 0.241 |
| D1 | 3.910 | 4.110 | 0.154 | 0.162 |
| E1 | 3.375 | 3.575 | 0.133 | 0.141 |
| D2 | 4.824 | 4.976 | 0.190 | 0.196 |
| E2 | 5.674 | 5.826 | 0.223 | 0.229 |
| k | 1.190 | 1.390 | 0.047 | 0.055 |
| b | 0.350 | 0.450 | 0.014 | 0.018 |
| e | 1.270TYP. (0.050TYP.) | |||
| L | 0.559 | 0.711 | 0.022 | 0.028 |
| L1 | 0.424 | 0.576 | 0.017 | 0.023 |
| H | 0.574 | 0.726 | 0.023 | 0.029 |
| 10 | 12 | 10 | 12 | |
Order Information
| Device | Package | Unit/Tape |
|---|---|---|
| SP40N02BGNK | PDFN5X6-8L | 5000 |
2504101957_Siliup-SP40N02BGNK_C22385418.pdf
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