SP40N02BGNK 40V N Channel Power MOSFET Featuring Fast Switching and Low RDSon for Power Applications

Key Attributes
Model Number: SP40N02BGNK
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
120A
Operating Temperature -:
-55℃~+150℃
RDS(on):
2.3mΩ@10V;3.3mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.8V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
51pF
Number:
1 N-channel
Output Capacitance(Coss):
1.006nF
Input Capacitance(Ciss):
2.868nF
Pd - Power Dissipation:
85W
Gate Charge(Qg):
57nC@10V
Mfr. Part #:
SP40N02BGNK
Package:
PDFN-8L(5x6)
Product Description

Product Overview

The SP40N02BGNK is a 40V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for power switching applications, PWM applications, and DC-DC converters. It features fast switching, low gate charge, and low RDS(on) due to its advanced split gate trench technology. The device is 100% tested for single pulse avalanche energy.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Product Code: SP40N02BGNK
  • Device Code: 40N02BG
  • Technology: Advanced Split Gate Trench Technology
  • Channel Type: N-Channel
  • Package: PDFN5X6-8L

Technical Specifications

Parameter Symbol Test Condition Min Typ Max Units
Product Summary
V(BR)DSS 40 V
RDS(on) @10V 2.3 m
RDS(on) @4.5V 3.3 m
ID 120 A
Absolute Maximum Ratings
Drain-Source Voltage VDS 40 V
Gate-Source Voltage VGS 20 V
Continuous Drain Current (Tc=25) Silicon Limit ID 135 A
Continuous Drain Current (Tc=25) Package Limit ID 120 A
Continuous Drain Current (Tc=100) ID 80 A
Pulsed Drain Current IDM 480 A
Single Pulse Avalanche Energy EAS 420 mJ
Power Dissipation (Tc=25) PD 85 W
Thermal Resistance Junction-to-Case RJC 1.47 /W
Storage Temperature Range TSTG -55 150
Operating Junction Temperature Range TJ -55 150
Electrical Characteristics
Drain-Source Breakdown Voltage BVDSS VGS=0V , ID=250uA 40 - - V
Drain Cut-Off Current IDSS VDS=32V , VGS=0V , TJ=25 - - 1 uA
Gate Leakage Current IGSS VGS=20V , VDS=0V - - 100 nA
Gate Threshold Voltage VGS(th) VGS=VDS , ID =250uA 1.0 1.8 2.5 V
Drain-Source ON Resistance RDS(ON) VGS=10V , ID=20A - 2.3 2.8 m
Drain-Source ON Resistance RDS(ON) VGS=4.5V , ID=10A - 3.3 4 m
Dynamic Characteristics
Input Capacitance Ciss VDS=20V , VGS=0V , f=1MHz - 2868 - pF
Output Capacitance Coss - 1006 - pF
Reverse Transfer Capacitance Crss - 51 - pF
Total Gate Charge Qg VDS=20V , VGS=10V , ID=85A - 57 - nC
Gate-Source Charge Qgs - 9.5 -
Gate-Drain Charge Qg d - 11 -
Switching Characteristics
Turn-On Delay Time td(on) VDD=20V, VGS=10V, RG=1.6, ID=85A - 10 - nS
Rise Time tr - 3 -
Turn-Off Delay Time td(off) - 35 -
Fall Time tf - 4 -
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage VSD IS = 1A, VGS = 0V - - 1.2 V
Maximum Body-Diode Continuous Current IS - - 120 A
Reverse Recovery Time Trr IS=50A, di/dt=100A/us, TJ=25 - 18 - nS
Reverse Recovery Charge Qrr - 31 - nC

Package Information (PDFN5X6-8L)

Symbol Dimensions In Millimeters Dimensions In Inches
Min. Max. Min. Max.
A 0.900 1.000 0.035 0.039
A3 0.254REF. (0.010REF.)
D 4.944 5.096 0.195 0.201
E 5.974 6.126 0.235 0.241
D1 3.910 4.110 0.154 0.162
E1 3.375 3.575 0.133 0.141
D2 4.824 4.976 0.190 0.196
E2 5.674 5.826 0.223 0.229
k 1.190 1.390 0.047 0.055
b 0.350 0.450 0.014 0.018
e 1.270TYP. (0.050TYP.)
L 0.559 0.711 0.022 0.028
L1 0.424 0.576 0.017 0.023
H 0.574 0.726 0.023 0.029
10 12 10 12

Order Information

Device Package Unit/Tape
SP40N02BGNK PDFN5X6-8L 5000

2504101957_Siliup-SP40N02BGNK_C22385418.pdf
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