20V P Channel MOSFET Siliup SP20P25T2 suitable for battery switch and power conversion surface mount
Key Attributes
Model Number:
SP20P25T2
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
5.5A
RDS(on):
25mΩ@4.5V;30mΩ@2.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
650mV
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
96pF
Number:
1 P-Channel
Output Capacitance(Coss):
127pF
Input Capacitance(Ciss):
960pF
Pd - Power Dissipation:
1.1W
Gate Charge(Qg):
9.4nC@4.5V
Mfr. Part #:
SP20P25T2
Package:
SOT-23
Product Description
Product Overview
The SP20P25T2 is a 20V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high power and current handling, this surface-mount device is suitable for applications such as battery switches and DC/DC converters. It offers robust performance with a continuous drain current of -5.5A and low on-resistance.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Type: P-Channel MOSFET
- Package: SOT-23
- Device Code: 20P25
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | -20 | V | |||
| On-Resistance | RDS(on)TYP | @-4.5V | 25 | m | ||
| On-Resistance | RDS(on)TYP | @-2.5V | 30 | m | ||
| Continuous Drain Current | ID | -5.5 | A | |||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDSS | -20 | V | |||
| Gate-Source Voltage | VGSS | 12 | V | |||
| Continuous Drain Current | ID | -5.5 | A | |||
| Pulse Drain Current | IDM | Tested | -22 | A | ||
| Power Dissipation | PD | 1.1 | W | |||
| Junction-to-Ambient Thermal Resistance | RJA | 113 | C/W | |||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | C | ||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=-250A | -20 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=-16V , VGS=0V | - | - | -1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=12V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS , ID=-250A | -0.4 | -0.65 | -1.0 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-4.5V, ID=-3.5A | - | 25 | 32 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-2.5V, ID=-3A | - | 30 | 40 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=-15V , VGS=0V , f=1MHz | - | 960 | - | pF |
| Output Capacitance | Coss | - | 127 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 96 | - | pF | |
| Total Gate Charge | Qg | VDS=-15V , VGS=-4.5V , ID=-3A | - | 9.4 | - | nC |
| Gate-Source Charge | Qgs | - | 1.3 | - | ||
| Gate-Drain Charge | Qg | - | 2.3 | - | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD=-10V VGS=-4.5V , RG=3.3, ID=3A, | - | 9.8 | - | nS |
| Turn-On Rise Time | tr | - | 26.2 | - | ||
| Turn-Off Delay Time | td(off) | - | 48.5 | - | ||
| Turn-Off Fall Time | tf | - | 41.6 | - | ||
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=-1A , TJ=25 | - | - | -1.2 | V |
| Package Information (SOT-23) | ||||||
| Symbol | Dimensions In Millimeters | Min. | Max. | |||
| A | 0.90 | 1.15 | ||||
| A1 | 0.00 | 0.10 | ||||
| A2 | 0.90 | 1.05 | ||||
| b | 0.30 | 0.50 | ||||
| c | 0.08 | 0.15 | ||||
| D | 2.80 | 3.00 | ||||
| E | 1.20 | 1.40 | ||||
| E1 | 2.25 | 2.55 | ||||
| e | 0.95 REF. | |||||
| e1 | 1.80 | 2.00 | ||||
| L | 0.55 REF. | |||||
| L1 | 0.30 | 0.50 | ||||
| 0 | 8 | |||||
2506271720_Siliup-SP20P25T2_C49257243.pdf
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