Power Electronics Slkor IRFR5305 P Channel MOSFET with Low Gate Charge and Enhanced Heat Dissipation
Key Attributes
Model Number:
IRFR5305
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
30A
Operating Temperature -:
-55℃~+175℃
RDS(on):
35mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V
Reverse Transfer Capacitance (Crss@Vds):
75pF@30V
Number:
1 P-Channel
Input Capacitance(Ciss):
2.535nF@30V
Pd - Power Dissipation:
50W
Gate Charge(Qg):
46nC@10V
Mfr. Part #:
IRFR5305
Package:
TO-252
Product Description
Product Overview
This P-Channel MOSFET utilizes advanced trench technology and design to deliver excellent RDS(on) with low gate charge, making it suitable for a wide range of applications. Key advantages include low gate charge, advanced high cell density trench technology for ultra-low RDS(ON), and an excellent package design for effective heat dissipation. A green device option is also available.
Product Attributes
- Brand: slkormicro
- Origin: Not specified
- Material: Not specified
- Color: Green device available
- Certifications: Not specified
Technical Specifications
| Symbol | Parameter | Conditions | Min | Typ | Max | Units |
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | -60 | V | |||
| VGS | Gate-Source Voltage | 20 | V | |||
| ID | Continuous Drain Current | TC=25 | -30 | A | ||
| ID | Continuous Drain Current | TC=100 | -19 | A | ||
| ID | Pulsed Drain Current | --- | A | |||
| EAS | Single Pulse Avalanche Energy | 225 | mJ | |||
| PD | Power Dissipation | 50 | W | |||
| TJ, TSTG | Operating and Storage Junction Temperature Range | -55 | +175 | |||
| Thermal Characteristics | ||||||
| RJC | Thermal Resistance, Junction to Case | 3 | /W | |||
| RJA | Thermal Resistance, Junction to Ambient | 42 | /W | |||
| Electrical Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V,ID=250A | -60 | V | ||
| IDSS | Zero Gate Voltage Drain Current | VGS=0V, VDS=-60V | -1 | A | ||
| IGSS | Gate-Source Leakage Current | VGS=20V, VDS=0A | 100 | nA | ||
| VGS(th) | Gate-Source Threshold Voltage | VGS=VDS, ID=250A | -1 | -1.8 | -2.5 | V |
| RDS(ON) | Drain-Source On Resistance | VGS=-10V,ID=-15A | 26 | 35 | m | |
| RDS(ON) | Drain-Source On Resistance | VGS=-4.5V,ID=-10A | 32 | 40 | m | |
| GFS | Forward Transconductance | VDS =-10V, ID=-15A | --- | --- | S | |
| Ciss | Input Capacitance | VDS=-30V, VGS=0V, f=1MHz | 2535 | pF | ||
| Coss | Output Capacitance | 130 | pF | |||
| Crss | Reverse Transfer Capacitance | 75 | pF | |||
| td(on) | Turn-On Delay Time | VDD=-30V, ID=-10A, RGEN=6.8, VGS=-10V | 14 | ns | ||
| tr | Rise Time | 18 | ns | |||
| td(off) | Turn-Off Delay Time | 42 | ns | |||
| tf | Fall Time | 15 | ns | |||
| Qg | Total Gate Charge | VGS=-10V, VDS=-30V, ID=-10A | 46 | nC | ||
| Qgs | Gate-Source Charge | 11 | nC | |||
| Qgd | Gate-Drain Miller Charge | 10 | nC | |||
| Drain-Source Diode Characteristics | ||||||
| VSD | Source-Drain Diode Forward Voltage | VGS=0V,IS=-15A, TJ=25 | -0.88 | -1.2 | V | |
| trr | Reverse Recovery Time | ISd=-20A,VGS=0V .dI/dt=-500A/s | 28 | ns | ||
| Qrr | Reverse Recovery Charge | 165 | nc | |||
2209051730_Slkor-IRFR5305_C5155388.pdf
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