60V N Channel Power MOSFET Siliup SP60N02AGTO Featuring Low RDSon and Fast Switching for Power Management

Name: 60V N Channel Power MOSFET Siliup SP60N02AGTO Featuring Low RDSon and Fast Switching for Power Management
Brand: Hefei Purple Horn E-Commerce Co., Ltd.
SKU: SP60N02AGTO
Availability: InStock

Key Attributes

Model Number: SP60N02AGTO

Product Custom Attributes

Configuration:

Drain To Source Voltage:

60V

Current - Continuous Drain(Id):

220A

RDS(on):

1.9mΩ@10V

Operating Temperature -:

-55℃~+150℃

Gate Threshold Voltage (Vgs(th)):

1.7V@250uA

Reverse Transfer Capacitance (Crss@Vds):

25pF

Number:

1 N-channel

Output Capacitance(Coss):

1.26nF

Pd - Power Dissipation:

264W

Input Capacitance(Ciss):

4.81nF

Gate Charge(Qg):

73nC@10V

Mfr. Part #:

SP60N02AGTO

Package:

TOLL-8

Product Description

Product Overview

The SP60N02AGTO is a 60V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on) thanks to its advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is ideal for power switching applications, DC-DC converters, and power management systems. It is supplied in a TOLL package.

Product Attributes

Brand: Siliup Semiconductor Technology Co. Ltd.
Product Code: SP60N02AGTO
Technology: Advanced Split Gate Trench Technology
Package: TOLL
Channel Type: N-Channel

Technical Specifications

Parameter	Symbol	Conditions	Min.	Typ.	Max.	Units
Product Summary
Drain-Source Voltage	V(BR)DSS				60	V
RDS(on)	RDS(on)TYP	10V		1.9		m
RDS(on)	RDS(on)TYP	4.5V		2.5		m
Continuous Drain Current	ID				220	A
Absolute Maximum Ratings
Drain-Source Voltage	VDS	(Ta=25 unless otherwise noted)			60	V
Gate-Source Voltage	VGS				20	V
Continuous Drain Current (Tc=25)	ID				220	A
Continuous Drain Current (Tc=100)	ID				147	A
Pulsed Drain Current	IDM				880	A
Single Pulse Avalanche Energy	EAS				961	mJ
Power Dissipation (Tc=25)	PD				264	W
Thermal Resistance Junction-to-Case	RJC			0.47		/W
Storage Temperature Range	TSTG		-55		150
Operating Junction Temperature Range	TJ		-55		150
Electrical Characteristics
Drain-Source Breakdown Voltage	BVDSS	VGS=0V , ID=250uA	60	65	-	V
Drain-Source Leakage Current	IDSS	VDS=48V , VGS=0V	-	-	1	uA
Gate-Source Leakage Current	IGSS	VGS=20V , VDS=0V	-	-	100	nA
Gate Threshold Voltage	VGS(th)	VGS=VDS , ID =250uA	1.2	1.7	2.2	V
Static Drain-Source On-Resistance	RDS(ON)	VGS=10V , ID=20A	-	1.9	2.3	m
Static Drain-Source On-Resistance	RDS(ON)	VGS=4.5V , ID=16A	-	2.5	3.2	m
Dynamic Characteristics
Input Capacitance	Ciss	VDS=30V , VGS=0V , f=1MHz	-	4810	-	pF
Output Capacitance	Coss		-	1260	-	pF
Reverse Transfer Capacitance	Crss		-	25	-	pF
Total Gate Charge	Qg	VDD = 30V, ID = 40A, VGS = 10V	-	73	-	nC
Gate-Source Charge	Qgs		-	12.4	-	nC
Gate-Drain Charge	Qg		-	16	-	nC
Switching Characteristics
Turn-On Delay Time	Td(on)	VDD = 30V, VGS = 10V,ID = 40A, RG = 4	-	10.5	-	nS
Rise Time	Tr		-	7.6	-	nS
Turn-Off Delay Time	Td(off)		-	44	-	nS
Fall Time	Tf		-	9.8	-	nS
Diode Characteristics
Diode Forward Voltage	VSD	VGS=0V , IS=1A , TJ=25	-	-	1.2	V
Maximum Body-Diode Continuous Current	IS		-	-	220	A
Reverse Recovery Time	Trr	IS=50A, di/dt=100A/us, TJ=25	-	53	-	nS
Reverse Recovery Charge	Qrr		-	73	-	nC

Note: The test condition for EAS is VDD=30V, VGS=10V, L=0.5mH, RG=25.

Package Information (TOLL)

Symbol	Dimensions (mm)
	Min.	Nom.	Max.
A	2.20	2.30	2.40
b	0.65	0.75	0.85
C	0.508	REF
D	10.25	10.40	10.55
D1	2.85	3.00	3.15
E	9.75	9.90	10.05
E1	9.65	9.80	9.95
E2	8.95	9.10	9.25
E3	7.25	7.40	7.55
e	1.20 BSC
F	1.05	1.20	1.35
H	11.55	11.70	11.85
H1	6.03	6.18	6.33
H2	6.85	7.00	7.15
H3	3.00 BSC
L	1.55	1.70	1.85
L1	0.55	0.7	0.85
L2	0.45	0.6	0.75
M	0.08 REF.
	8	10	12
K	4.25	4.40	4.55

Order Information

Device	Package	Unit/Tape
SP60N02AGTO	TOLL	2000

Marking

60N02AG : Product code
* : Month code

2504101957_Siliup-SP60N02AGTO_C42403238.pdf

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