Power management MOSFET Siliup SP60N30NQ N Channel with 60V rating and low input capacitance package
Key Attributes
Model Number:
SP60N30NQ
Product Custom Attributes
Drain To Source Voltage:
60V
Configuration:
-
Current - Continuous Drain(Id):
9A
Operating Temperature -:
-55℃~+150℃
RDS(on):
30mΩ@10V;35mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.6V@250uA
Reverse Transfer Capacitance (Crss@Vds):
45pF
Number:
1 N-channel
Output Capacitance(Coss):
60pF
Pd - Power Dissipation:
2.1W
Input Capacitance(Ciss):
1.18nF
Gate Charge(Qg):
14nC@10V
Mfr. Part #:
SP60N30NQ
Package:
PDFN-6L(2x2)
Product Description
Product Overview
The SP60N30NQ is a 60V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features low on-resistance and low input capacitance, making it suitable for power management functions and DC-DC converters. This MOSFET is available in a PDFN2X2-6L package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Type: N-Channel MOSFET
- Model Number: SP60N30NQ
- Device Code: 60N30
- Package: PDFN2X2-6L
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 60 | V | |||
| On-Resistance | RDS(on)TYP | @10V | 30 | m | ||
| On-Resistance | RDS(on)TYP | @4.5V | 35 | m | ||
| Continuous Drain Current | ID | 9 | A | |||
| Absolute Maximum Ratings (Ta=25 unless otherwise noted) | ||||||
| Drain-Source Voltage | VDS | 60 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | 9 | A | |||
| Pulsed Drain Current | IDM | 36 | A | |||
| Power Dissipation | PD | 2.1 | W | |||
| Thermal Resistance Junction-to-Ambient | RJA | 59.5 | /W | |||
| Operating Junction Temperature Range | TSTG | -55 | ~ | +150 | ||
| Storage Temperature Range | TJ | -55 | ~ | +150 | ||
| Electrical Characteristics (TA=25 oC, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 60 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=48V , VGS=0V , TJ=25 | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 1.0 | 1.6 | 2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =10V, ID =8A | - | 30 | 40 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =4.5V, ID =4A | - | 35 | 45 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=15V , VGS=0V , f=1MHz | - | 1180 | - | pF |
| Output Capacitance | Coss | - | 60 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 45 | - | pF | |
| Total Gate Charge | Qg | VDS=30V , VGS=10V , ID=8A | - | 14 | - | nC |
| Gate-Source Charge | Qgs | - | 2.9 | - | nC | |
| Gate-Drain Charge | Qg d | - | 5.2 | - | nC | |
| Switching Characteristics | ||||||
| Turn-On Delay Time | Td(on) | VDD=30V, VGS=10V , RG=3, ID=2A | - | 5 | - | nS |
| Rise Time | Tr | - | 15 | - | nS | |
| Turn-Off Delay Time | Td(off) | - | 24 | - | nS | |
| Fall Time | Tf | - | 2.3 | - | nS | |
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Package Information (PDFN2X2-6L) | ||||||
| Symbol | Dimensions | Unit | Min. | Typ. | Max. | |
| A | mm | 0.70 | 0.75 | 0.80 | ||
| A1 | mm | 0.02 | 0.05 | |||
| b | mm | 0.25 | 0.30 | 0.35 | ||
| b1 | mm | 0.20 | REF | |||
| c | mm | 0.203 | REF | |||
| D | mm | 1.90 | 2.00 | 2.10 | ||
| D1 | mm | 0.08 | 0.125 | 0.18 | ||
| D2 | mm | 0.85 | 0.90 | 0.95 | ||
| D3 | mm | 0.25 | 0.30 | 0.35 | ||
| D4 | mm | 0.33 | 0.375 | 0.43 | ||
| e | BSC | 0.65 | ||||
| Nd | BSC | 1.30 | ||||
| E | mm | 1.90 | 2.00 | 2.10 | ||
| E2 | mm | 0.95 | 1.00 | 1.05 | ||
| E3 | mm | 0.55 | 0.60 | 0.65 | ||
| L | mm | 0.20 | 0.25 | 0.30 | ||
| h | REF | 0.25 | ||||
2504101957_Siliup-SP60N30NQ_C41354981.pdf
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