Durable Siliup SP2026KCTL 20V Complementary MOSFET Designed for Power Switching and DC DC Converter
Key Attributes
Model Number:
SP2026KCTL
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
750mA;660mA
RDS(on):
250mΩ@4.5V;650mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
650mV@250uA
Type:
N-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds):
9pF;14pF
Number:
-
Output Capacitance(Coss):
19pF;20pF
Input Capacitance(Ciss):
35pF;75pF
Pd - Power Dissipation:
150mW
Gate Charge(Qg):
800pC@4.5V;1.25nC@4.5V
Mfr. Part #:
SP2026KCTL
Package:
SOT-563
Product Description
SP2026KCTL 20V Complementary MOSFET
The SP2026KCTL is a 20V Complementary MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for high power and current handling capabilities. This surface-mount device features ESD protection up to 2KV, making it suitable for applications such as battery switches and DC/DC converters. Its complementary nature allows for versatile circuit designs.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP2026KCTL
- Package Type: SOT-563
- Marking: 26K
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit | |
|---|---|---|---|---|---|---|---|
| N-Channel | P-Channel | ||||||
| - | - | - | 150 | mW | |||
| Thermal Resistance Junction-to-Ambient | RJA | - | - | - | 833 | /W | |
| Storage Temperature Range | TSTG | - | -55 | - | 150 | ||
| Operating Junction Temperature Range | TJ | - | -55 | - | 150 | ||
| P-Channel Electrical Characteristics (Ta=25, unless otherwise noted) | |||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250A | -20 | -20 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=-16V, VGS=0V | - | - | - | -1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=12V, VDS=0V | - | - | - | 10 | uA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=-250A | -0.35 | -0.65 | -1.00 | V | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-4.5V, ID=-500mA | - | - | 650 | 750 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-2.5V, ID=-200mA | - | - | 850 | 1000 | m |
| Input Capacitance | Ciss | VDS=-10V, VGS=0V, f=1MHz | - | - | 75 | - | pF |
| Output Capacitance | Coss | - | - | - | 20 | - | pF |
| Reverse Transfer Capacitance | Crss | - | - | - | 14 | - | pF |
| Total Gate Charge | Qg | VDS=-10V, VGS=-4.5V, ID=-0.5A | - | - | 1.25 | - | nC |
| Gate-Source Charge | Qgs | - | - | - | 0.35 | - | - |
| Gate-Drain Charge | Qgd | - | - | - | 0.27 | - | - |
| Turn-On Delay Time | td(on) | VDD=-10V, VGS=-4.5V, RG=3, RL=2.5 | - | - | 5 | - | nS |
| Turn-On Rise Time | tr | - | - | - | 19 | - | nS |
| Turn-Off Delay Time | td(off) | - | - | - | 15 | - | nS |
| Turn-Off Fall Time | tf | - | - | - | 24 | - | nS |
| Diode Forward Voltage | VSD | VGS=0V, IS=-1A, TJ=25 | - | - | - | -1.2 | V |
Package Information (SOT-563)
| Symbol | Dimensions In Millimeters | |
|---|---|---|
| Min | Max | |
| A | 0.525 | 0.600 |
| A1 | 0.000 | 0.050 |
| e | 0.450 | 0.550 |
| c | 0.090 | 0.160 |
| D | 1.500 | 1.700 |
| b | 0.170 | 0.270 |
| E1 | 1.100 | 1.300 |
| E | 1.500 | 1.700 |
| L | 0.100 | 0.300 |
| L1 | 0.200 | 0.400 |
| 7Ref. | ||
Order Information
| Device | Package | Unit/Tape |
|---|---|---|
| SP2026KCTL | SOT-563 | 3000 |
2504101957_Siliup-SP2026KCTL_C41355147.pdf
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