Surface Mount P Channel MOSFET Siliup SP2305LT2C with 20V Drain Source Voltage and 60m Typical RDSon
Key Attributes
Model Number:
SP2305LT2C
Product Custom Attributes
Drain To Source Voltage:
20V
Configuration:
-
Current - Continuous Drain(Id):
3.7A
Operating Temperature -:
-55℃~+150℃
RDS(on):
44mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
650mV@250uA
Reverse Transfer Capacitance (Crss@Vds):
190pF
Number:
1 P-Channel
Output Capacitance(Coss):
290pF
Pd - Power Dissipation:
1.38W
Input Capacitance(Ciss):
740pF
Gate Charge(Qg):
4.5nC@2.5V
Mfr. Part #:
SP2305LT2C
Package:
SOT-23
Product Description
Product Overview
The SP2305LT2C is a 20V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for high power and current handling capabilities. It is suitable for surface mount applications and finds use in battery switches and DC/DC converters. This device offers a typical RDS(on) of 44m at -4.5V and 60m at -2.5V, with a continuous drain current of -3.7A.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Type: P-Channel MOSFET
- Package: SOT-23
- Marking Code: S5
Technical Specifications
| Parameter | Symbol | Conditions | Value | Unit |
|---|---|---|---|---|
| Product Summary | ||||
| Drain-Source Voltage | V(BR)DSS | -20 | V | |
| RDS(on) Typ | @-4.5V | 44 | m | |
| Continuous Drain Current | ID | -3.7 | A | |
| RDS(on) Typ | @-2.5V | 60 | m | |
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||
| Drain-Source Voltage | VDSS | -20 | V | |
| Gate-Source Voltage | VGSS | 10 | V | |
| Continuous Drain Current | ID | -3.7 | A | |
| Pulse Drain Current | IDM | Tested | -14.8 | A |
| Power Dissipation | PD | 1 | W | |
| Thermal Resistance Junction-to-Ambient | RJA | 125 | C/W | |
| Storage Temperature Range | TSTG | -55 to 150 | C | |
| Operating Junction Temperature Range | TJ | -55 to 150 | C | |
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=-250A | -20 | V |
| Drain-Source Leakage Current | IDSS | VDS=-16V , VGS=0V | - | -1 uA |
| Gate-Source Leakage Current | IGSS | VGS=10V , VDS=0V | - | 100 nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS , ID=-250A | -0.5 -0.65 -0.9 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-4.5V , ID=-3A | - 44 56 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-2.5V , ID=-2.5A | - 60 80 | m |
| Dynamic Characteristics | ||||
| Input Capacitance | Ciss | VDS=-4V , VGS=0V , f=1MHz | - 740 - | pF |
| Output Capacitance | Coss | - 290 - | ||
| Reverse Transfer Capacitance | Crss | - 190 - | ||
| Total Gate Charge | Qg | VDS=-4V , VGS=-2.5V , ID=-3.7A | - 4.5 - | nC |
| Gate-Source Charge | Qgs | - 1.2 - | ||
| Gate-Drain Charge | Qgd | - 1.6 - | ||
| Switching Characteristics | ||||
| Turn-On Delay Time | td(on) | VDD=-4V VGS=-4.5V , RG=1 , ID=-3.7A | - 13 - | nS |
| Turn-On Rise Time | tr | - 35 - | ||
| Turn-Off Delay Time | td(off) | - 32 - | ||
| Turn-Off Fall Time | tf | - 10 - | ||
| Source-Drain Diode Characteristics | ||||
| Diode Forward Voltage | VSD | VGS=0V , IS=-1A , TJ=25 | - - -1.2 | V |
| Order Information | ||||
| Device | Package | Unit/Tape | ||
| SP2305LT2C | SOT-23 | 3000 | ||
| Package Information (SOT-23) | ||||
| Symbol | Dimensions In Millimeters | Min. | Max. | |
| A | 0.90 | 1.15 | ||
| A1 | 0.00 | 0.10 | ||
| A2 | 0.90 | 1.05 | ||
| b | 0.30 | 0.50 | ||
| c | 0.08 | 0.15 | ||
| D | 2.80 | 3.00 | ||
| E | 1.20 | 1.40 | ||
| E1 | 2.25 | 2.55 | ||
| e | REF. | 0.95 | ||
| e1 | 1.80 | 2.00 | ||
| L | REF. | 0.55 | ||
| L1 | 0.30 | 0.50 | ||
| 0 | 8 | |||
2504101957_Siliup-SP2305LT2C_C41354959.pdf
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