30V N Channel MOSFET Siliup SP2306T2 Designed for Surface Mount Applications and Power Management Solutions
Key Attributes
Model Number:
SP2306T2
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
3.6A
RDS(on):
38mΩ@10V;45mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
29pF
Number:
1 N-channel
Output Capacitance(Coss):
65pF
Input Capacitance(Ciss):
305pF
Pd - Power Dissipation:
350mW
Gate Charge(Qg):
3nC@10V
Mfr. Part #:
SP2306T2
Package:
SOT-23
Product Description
Product Overview
The SP2306T2 is a 30V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for high power and current handling capabilities. It is suitable for surface mount applications and is commonly used in battery switches and DC/DC converters. The device features a low on-resistance at various gate-source voltages, making it an efficient component for power management solutions.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP2306T2
- Channel Type: N-Channel MOSFET
- Package: SOT-23
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 30 | V | |||
| RDS(on) | @10V | 38 | m | |||
| ID | 3.6 | A | ||||
| RDS(on) | @4.5V | 45 | m | |||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDSS | 30 | V | |||
| Gate-Source Voltage | VGSS | 20 | V | |||
| Continuous Drain Current | ID | 3.6 | A | |||
| Pulse Drain Current | IDM | Tested | 14.4 | A | ||
| Power Dissipation | PD | 0.7 | W | |||
| Thermal Resistance Junction-to-Ambient | RJA | 178 | C/W | |||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | C | ||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250A | 30 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=24V , VGS=0V | - | - | 0.5 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS , ID=250A | 1 | 1.5 | 2 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V , ID =3.5A | - | 38 | 47 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V , ID =2.8A | - | 45 | 65 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=15V , VGS=0V , f=1MHz | - | 305 | - | pF |
| Output Capacitance | Coss | - | 65 | - | ||
| Reverse Transfer Capacitance | Crss | - | 29 | - | ||
| Total Gate Charge | Qg | VDS=15V , VGS=10V , ID=2.5A | - | 3.0 | - | nC |
| Gate-Source Charge | Qgs | - | 1.6 | - | ||
| Gate-Drain Charge | Qg | - | 0.6 | - | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD=15V VGS=10V , RG=6, ID=1A | - | 7 | - | nS |
| Turn-On Rise Time | tr | - | 12 | - | ||
| Turn-Off Delay Time | td(off) | - | 14 | - | ||
| Turn-Off Fall Time | tf | - | 6 | - | ||
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Package Information (SOT-23) | ||||||
| Symbol | Dimensions (mm) | Min. | Max. | |||
| A | 0.90 | 1.15 | ||||
| A1 | 0.00 | 0.10 | ||||
| A2 | 0.90 | 1.05 | ||||
| b | 0.30 | 0.50 | ||||
| c | 0.08 | 0.15 | ||||
| D | 2.80 | 3.00 | ||||
| E | 1.20 | 1.40 | ||||
| E1 | 2.25 | 2.55 | ||||
| e | 0.95 REF. | |||||
| e1 | 1.80 | 2.00 | ||||
| L | 0.55 REF. | |||||
| L1 | 0.30 | 0.50 | ||||
| 0 | 8 | |||||
2504101957_Siliup-SP2306T2_C41354908.pdf
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