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quality NPN Planar Transistor Slkor BC817-40 with High Collector Current and Low Saturation Voltage Features factory
quality NPN Planar Transistor Slkor BC817-40 with High Collector Current and Low Saturation Voltage Features factory

NPN Planar Transistor Slkor BC817-40 with High Collector Current and Low Saturation Voltage Features

Key Attributes
Model Number: BC817-40
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
DC Current Gain:
250@100mA,1V
Transition Frequency(fT):
100MHz
Vce Saturation(VCE(sat)):
700mV
Type:
NPN
Pd - Power Dissipation:
300mW
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
45V
Operating Temperature:
-
Mfr. Part #:
BC817-40
Package:
SOT-23
Product Description

Product Overview

The BC817 is an NPN Silicon Epitaxial Planar Transistor designed for general AF applications. It features high collector current, high current gain, and a low collector-emitter saturation voltage. Complementary to the BC807 (PNP), this transistor is suitable for various electronic circuits requiring efficient amplification and switching.

Product Attributes

  • Brand: slkormicro (implied from URL)
  • Type: NPN Silicon Epitaxial Planar Transistor
  • Complementary Type: BC807 (PNP)
  • Package Type: SOT-23

Technical Specifications

Parameter Symbol Test Conditions Min Typ Max Unit
Collector-base breakdown voltage VCBO IC= 10A, IE=0 50 V
Collector-emitter breakdown voltage VCEO IC= 10mA, IB=0 45 V
Emitter-base breakdown voltage VEBO IE=1A, IC=0 5 V
Collector cut-off current ICBO VCB= 45 V, IE=0 0.1 A
Emitter cut-off current IEBO VEB=4V, IC=0 0.1 A
DC current gain (hFE(1)) hFE VCE=1V, IC= 100mA 100 600
DC current gain (hFE(2)) hFE VCE=1V, IC= 500mA 40
Collector-emitter saturation voltage VCE(sat) IC= 500mA, IB= 50mA 0.7 V
Base-emitter saturation voltage VBE(sat) IC= 500mA, IB= 50mA 1.2 V
Base-emitter voltage VBE VCE= 1 V, IC= 500mA 1.2 V
Collector capacitance Cob VCB=10V, f=1MHz 10 pF
Transition frequency fT VCE= 5 V, IC=10mA, f=100MHz 100 MHz
Classification of hFE (1) Rank Range
BC817-16 100-250
BC817-25 160-400
BC817-40 250-600
Symbol Parameter Value Unit
VCBO Collector-Base Voltage 50 V
VCEO Collector-Emitter Voltage 45 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current 500 mA
PC Collector Power Dissipation 300 mW
RJA Thermal Resistance From Junction To Ambient 417 /W
Tj Junction Temperature 150
Tstg Storage Temperature -55+150
Symbol Dimensions In Millimeters Dimensions In Inches
A 0.900 - 1.150 0.035 - 0.045
A1 0.000 - 0.100 0.000 - 0.004
A2 0.900 - 1.050 0.035 - 0.041
b 0.300 - 0.500 0.012 - 0.020
c 0.080 - 0.150 0.003 - 0.006
D 2.800 - 3.000 0.110 - 0.118
E 1.200 - 1.400 0.047 - 0.055
E1 2.250 - 2.550 0.089 - 0.100
e
e1 1.800 - 2.000 0.071 - 0.079
L
L1 0.300 - 0.500 0.012 - 0.020
0 - 8 0 - 8
0.550 REF 0.022 REF
0.950 TYP 0.037 TYP

2110130930_Slkor-BC817-40_C609806.pdf

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