Siliup SP015N06GHTO 150V N Channel MOSFET Featuring Low Gate Charge and High Continuous Drain Current
Key Attributes
Model Number:
SP015N06GHTO
Product Custom Attributes
Drain To Source Voltage:
150V
Current - Continuous Drain(Id):
185A
Operating Temperature -:
-55℃~+150℃
RDS(on):
5.7mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Reverse Transfer Capacitance (Crss@Vds):
14pF
Number:
1 N-channel
Output Capacitance(Coss):
430pF
Input Capacitance(Ciss):
5.24nF
Pd - Power Dissipation:
350W
Gate Charge(Qg):
70nC@10V
Mfr. Part #:
SP015N06GHTO
Package:
TOLL-8L
Product Description
Product Overview
The SP015N06GHTO is a 150V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on) thanks to its advanced split gate trench technology. This MOSFET is designed for power switching applications and DC-DC converters, offering 100% single pulse avalanche energy testing for reliability. It is available in a TOLL package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP015N06GHTO
- Package Type: TOLL
- Channel Type: N-Channel
Technical Specifications
| Parameter | Symbol | Test Condition | Rating | Unit |
|---|---|---|---|---|
| Drain-Source Voltage | VDS | - | 150 | V |
| Gate-Source Voltage | VGS | - | 20 | V |
| Continuous Drain Current (Tc=25) | ID | - | 185 | A |
| Continuous Drain Current (Tc=100) | ID | - | 125 | A |
| Pulsed Drain Current | IDM | - | 740 | A |
| Single Pulse Avalanche Energy | EAS | - | 812 | mJ |
| Power Dissipation (Tc=25) | PD | - | 350 | W |
| Thermal Resistance Junction-to-Case | RJC | - | 0.36 | /W |
| Storage Temperature Range | TSTG | - | -55 to 150 | |
| Operating Junction Temperature Range | TJ | - | -55 to 150 | |
| Drain-Source Breakdown Voltage | BVDSS | ID = 250A, VGS = 0V | 150 (Min), 170 (Max) | V |
| Drain Cut-Off Current | IDSS | VDS = 120V, VGS = 0V | - (Max) 1 | A |
| Gate Leakage Current | IGSS | VGS = 20V, VDS = 0V | - (Max) 0.1 | - |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250A | 2.0 (Min), 3.0 (Typ), 4.0 (Max) | V |
| Drain-Source ON Resistance | RDS(ON) | VGS = 10V, ID = 20A | - (Typ) 5.7, - (Max) 6.5 | m |
| Input Capacitance | Ciss | VDS = 75V, VGS = 0V, f = 1.0MHz | - (Typ) 5240 | pF |
| Output Capacitance | Coss | - | - (Typ) 430 | pF |
| Reverse Transfer Capacitance | Crss | - | - (Typ) 14 | pF |
| Total Gate Charge | Qg | VDS=75V , VGS=10V , ID=104A | - (Typ) 70 | nC |
| Gate-Source Charge | Qgs | - | - (Typ) 31 | - |
| Gate-Drain Charge | Qgd | - | - (Typ) 20 | - |
| Turn-On Delay Time | td(on) | VGS = 10V, VDS = 50V, ID = 104A, RG = 6 | - (Typ) 24 | nS |
| Rise Time | tr | - | - (Typ) 35 | - |
| Turn-Off Delay Time | td(off) | - | - (Typ) 46 | - |
| Fall Time | tf | - | - (Typ) 15 | - |
| Source-Drain Diode Forward Voltage | VSD | IS = 1A, VGS = 0V | - (Max) 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - (Max) 185 | A |
| Body Diode Reverse Recovery Time | Trr | IS=50A, di/dt=100A/us, TJ=25 | - (Typ) 98 | nS |
| Body Diode Reverse Recovery Charge | Qrr | - | - (Typ) 217 | nC |
Note: The test condition for EAS is VDD=50V, VGS=10V, L=0.5mH, RG=25.
Order Information:
| Device | Package | Unit/Tape |
|---|---|---|
| SP015N06GHTO | TOLL | 2000 |
Package Dimensions (TOLL):
| Symbol | Dimensions (Millimeters) |
|---|---|
| A | 2.20 - 2.40 |
| b | 0.65 - 0.85 |
| C | 0.508 (REF) |
| D | 10.25 - 10.55 |
| D1 | 2.85 - 3.15 |
| E | 9.75 - 10.05 |
| E1 | 9.65 - 9.95 |
| E2 | 8.95 - 9.25 |
| E3 | 7.25 - 7.55 |
| e | 1.20 (BSC) |
| F | 1.05 - 1.35 |
| H | 11.55 - 11.85 |
| H1 | 6.03 - 6.33 |
| H2 | 6.85 - 7.15 |
| H3 | 3.00 (BSC) |
| L | 1.55 - 1.85 |
| L1 | 0.55 - 0.85 |
| L2 | 0.45 - 0.75 |
| M | 0.08 (REF) |
| 8 - 12 | |
| K | 4.25 - 4.55 |
2504101957_Siliup-SP015N06GHTO_C22385355.pdf
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