NPN epitaxial planar transistor Slkor CZT5551 offering high breakdown voltage for electronic circuit

Name: NPN epitaxial planar transistor Slkor CZT5551 offering high breakdown voltage for electronic circuit
Brand: Hefei Purple Horn E-Commerce Co., Ltd.
SKU: CZT5551
Availability: InStock

Key Attributes

Model Number: CZT5551

Product Custom Attributes

Emitter-Base Voltage(Vebo):

Current - Collector Cutoff:

50nA

DC Current Gain:

400@10mA,5V

Transition Frequency(fT):

100MHz

Vce Saturation(VCE(sat)):

200mV

Type:

NPN

Pd - Power Dissipation:

1.5W

Current - Collector(Ic):

600mA

Collector - Emitter Voltage VCEO:

160V

Operating Temperature:

-55℃~+150℃@(Tj)

Mfr. Part #:

CZT5551

Package:

SOT-223

Product Description

Product Overview

The CZT5551 is an NPN epitaxial planar transistor designed for general-purpose applications that require high breakdown voltages. It offers a high collector-base breakdown voltage of 180V and a collector-emitter breakdown voltage of 160V, making it suitable for demanding electronic circuits.

Product Attributes

Type: NPN Transistor
Technology: Epitaxial Planar
Brand: SLKOR (implied by www.slkormicro.com)

Technical Specifications

Parameter	Symbol	Test Conditions	MIN	TYP	MAX	UNIT
Collector-base breakdown voltage	V(BR)CBO	Ic= 100uA, IE=0			180	V
Collector-emitter breakdown voltage	V(BR)CEO	IC= 1 mA, IB=0			160	V
Emitter-base breakdown voltage	V(BR)EBO	IE= 10u A, IC=0			6	V
Collector cut-off current	ICBO	VCB= 120V, IE=0			50	nA
Emitter cut-off current	IEBO	VEB= 4V, IC=0			50	nA
DC current gain (hFE 1)	hFE	VCE= 5V, IC=1mA	80		400
DC current gain (hFE 2)	hFE	VCE= 5V, IC=10mA	80
Collector-emitter saturation voltage	VCE(sat)	IC= 10mA , IB= 1mA		0.15		V
Base-emitter saturation voltage	VBE(sat)	IC= 10mA, IB= 1mA			1	V
Transition frequency	fT	VCE= 10V, IC= 10mA, f = 100MHz		160		MHz
Collector output capacitance	Cob	VCB= 10V, f=1MHz, IE=0		6		pF
DC current gain (hFE 3)	hFE	VCE= 5V, IC= 50mA	50		300
Collector-emitter saturation voltage	VCE(sat)	IC= 50mA , IB= 5mA		0.2		V
Base-emitter saturation voltage	VBE(sat)	IC= 50mA, IB= 5mA		1		V

CLASSIFICATION OF hFE

Rank	Range
A	80-200
N	100-240
C	160-400

MAXIMUM RATINGS

Symbol	Parameter	Value	Units
IC	Collector Current-Continuous	1	A
PD	Total Power Dissipation	600	mW
VEBO	Emitter-Base Voltage	6	V
VCEO	Collector-Emitter Voltage	160	V
VCBO	Collector-Base Voltage	180	V
Tstg	Storage Temperature	-55~150	C
TJ	Junction Temperature	150	C

Package Dimensions (SOT-223)

REF	Min.	Max.
A	6.70	7.30
B	13	TYP.
C	2.90	3.10
D	0.02	0.10
E	0	10
I	0.60	0.80
J	2.30	REF.
1	6.30	6.70
2	6.30	6.70
3	3.30	3.70
4	3.30	3.70
5	1.40	1.80

2004140933_Slkor-CZT5551_C513469.pdf

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