Low noise broadband RF transistor Slkor BFR380F suitable for VHF UHF oscillators mixers and detectors

Key Attributes
Model Number: BFR380F
Product Custom Attributes
Emitter-Base Voltage(Vebo):
2V
Current - Collector Cutoff:
100nA
DC Current Gain:
200@40mA,3V
Transition Frequency(fT):
14GHz
Type:
NPN
Pd - Power Dissipation:
380mW
Current - Collector(Ic):
80mA
Collector - Emitter Voltage VCEO:
6V
Operating Temperature:
-
Mfr. Part #:
BFR380F
Package:
SOT-323
Product Description

Product Overview

The BFR380F is a high-frequency, low-noise, broadband RF silicon bipolar transistor designed for optimal performance in the 30-40mA collector current and 3-5V voltage range. It is suitable for signal amplification in oscillator circuits up to 3.8 GHz, offering approximately 1.1 dB noise at 1.8 GHz. Key features include low leakage current, small junction capacitance, and a wide dynamic range with excellent current linearity. This transistor is manufactured using lead-free (Pb-free, RoHS compliant) SOT323 surface-mount packaging. Its primary applications include TV tuners, satellite TV receivers, CATV video amplifiers, analog and digital cordless phones, radar sensing switches, wireless remote data transmission, wireless communications, RFID scatter systems, and fiber optic amplifiers. It is utilized in VHF/UHF amplifiers, oscillators, mixers, detectors, and for signal amplification in high-frequency microwave signal transmission and reception circuits.

Product Attributes

  • Brand: MICROWAVE
  • Model: BFR380F
  • Packaging: SOT323
  • Marking: FCs
  • Compliance: Pb-free, RoHS compliant

Technical Specifications

Parameter Name Symbol Test Condition Min Typical Max Unit
Absolute Maximum Ratings (Tamb=25)
Collector-Base Breakdown Voltage BVCBO 15 V
Collector-Emitter Breakdown Voltage BVCEO 6 V
Emitter-Base Breakdown Voltage BVEBO 2 V
Collector Current IC 80 mA
Power Dissipation PT 380 mW
Maximum Junction Temperature TJ 150
Storage Temperature Tstg -65 +150
Electrical Characteristics & Specifications (Tamb=25)
Collector-Emitter Breakdown Voltage BVCEO IC=1mA, IB=0 6 9 V
Collector-Emitter Cut-off Current ICES VCE=4V,VBE=0 1 30 nA
Collector-Base Cut-off Current ICBO VCB=6V,IE=0 100 nA
Emitter-Base Cut-off Current IEBO VEB=6V,IC=0 1 A
DC Current Gain hFE VCE=3V,IC=40mA 80 100 200
Transition Frequency fT VCE=3V,IC=15mA,f=1GHz 11 14 GHz
Feedback Capacitance Cre IC=iC=0,VCB=5V,f=1MHz 0.2 pF
Collector Capacitance Cc IE=ie=0,VCB=5V,f=1MHz 0.47 0.7 pF
Emitter Capacitance Ce IC=iC=0,VEB=0.5V,f=1MHz 1.0 pF
Insertion Power Gain |S21| VCE=3V,IC=40mA, f=1.8GHz 11 dB
Insertion Power Gain |S21| VCE=3V,IC=40mA, f=3.0GHz 6.5 dB
Noise Figure NF VCE=3V,IC=8mA,f=1.8GHz 1.1 dB
Maximum Unilateral Power Gain GUM VCE=3V,IC=40mA, f=1.8GHz 13.5 dB
Maximum Unilateral Power Gain GUM VCE=3V,IC=40mA, f=3.0GHz 9 dB
Output Third Order Intercept Point IP3 VCE=3V,IC=40mA, ZS=ZL=50, f=1.8GHz 29 dBm

2409271432_Slkor-BFR380F_C7496599.pdf

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