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quality General Purpose NPN Transistor Slkor MMBT5551 Medium Power Amplification and Switching Epitaxial Die factory
quality General Purpose NPN Transistor Slkor MMBT5551 Medium Power Amplification and Switching Epitaxial Die factory

General Purpose NPN Transistor Slkor MMBT5551 Medium Power Amplification and Switching Epitaxial Die

Key Attributes
Model Number: MMBT5551
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
100nA
DC Current Gain:
80@10mA,5V
Transition Frequency(fT):
80MHz
Vce Saturation(VCE(sat)):
500mV
Type:
NPN
Pd - Power Dissipation:
300mW
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
160V
Operating Temperature:
-55℃~+150℃@(Tj)
Mfr. Part #:
MMBT5551
Package:
SOT-23
Product Description

Product Overview

The MMBT5551 is an NPN general-purpose transistor featuring epitaxial planar die construction. It is designed for medium power amplification and switching applications. A complementary PNP type (MMBT5401) is available, and a lead-free version is also offered.

Product Attributes

  • Type: NPN General Purpose Transistor
  • Construction: Epitaxial planar die
  • Complementary Type: MMBT5401 (PNP)
  • Availability: Lead-free version available

Technical Specifications

Symbol Parameter Test Conditions Min. Max. Unit
MAXIMUM RATING @ Ta=25 unless otherwise specified
VCBO Collector-base voltage 180 V
VCEO Collector-emitter voltage 160 V
VEBO Emitter-base voltage 6 V
IC Collector current (DC) 0.6 A
PC Collector dissipation 0.3 W
Tj ,Tstg Junction and storage temperature -55 150 C
ELECTRICAL CHARACTERISTICS @ Ta=25 unless otherwise specified
V(BR)CBO Collector-base breakdown voltage IC=100A,IE=0 180 V
V(BR)CEO Collector-emitter breakdown voltage IC=0.1mA,IB=0 160 V
V(BR)EBO Emitter-base breakdown voltage IE=100A,IC=0 6 V
ICBO Collector cut-off current IE = 0; VCB = 180V 0.1 A
IEBO Emitter cut-off current IC = 0; VEB = 4V 0.1 A
hFE DC current gain VCE = 5V; IC = 1mA 80 250
VCE = 5V;IC = 10mA 80 -
VCE = 5V;IC = 50 mA 30 -
VCE(sat) Collector-emitter saturation voltage IC = 50 mA; IB = 5 mA 0.5 V
VBE(sat) Base-emitter saturation voltage IC = 50 mA; IB = 5 mA 1 V
fT Transition frequency IC = 10mA; VCE = 10V; f = 100MHz 80 - MHz

Package: SOT-23


2202240930_Slkor-MMBT5551_C609801.pdf

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