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quality Medium power NPN transistor Slkor MMST5551 compact surface mount device for amplification switching factory
quality Medium power NPN transistor Slkor MMST5551 compact surface mount device for amplification switching factory

Medium power NPN transistor Slkor MMST5551 compact surface mount device for amplification switching

Key Attributes
Model Number: MMST5551
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
50nA
DC Current Gain:
80@10mA,5V
Transition Frequency(fT):
300MHz
Number:
1 NPN
Vce Saturation(VCE(sat)):
200mV@50mA,5mA
Type:
NPN
Pd - Power Dissipation:
200mW
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
160V
Operating Temperature:
-
Mfr. Part #:
MMST5551
Package:
SOT-323
Product Description

Product Overview

The MMST5551 is a small surface mount NPN transistor ideal for medium power amplification and switching applications. It is complementary to the MMST5401 and comes in a compact SOT-323 package.

Product Attributes

  • Product Type: NPN Transistor
  • Marking: K4N
  • Complementary to: MMST5401

Technical Specifications

Parameter Symbol Rating Unit Test Conditions
Absolute Maximum Ratings (Ta = 25)
Collector - Base Voltage VCBO 180 V
Collector - Emitter Voltage VCEO 160 V
Emitter - Base Voltage VEBO 6 V
Collector Current - Continuous IC 600 mA
Collector Power Dissipation PC 200 mW
Thermal Resistance From Junction To Ambient RJA 625 /W
Junction Temperature TJ 150
Storage Temperature Range Tstg -55 to 150
Electrical Characteristics (Ta = 25)
Collector- base breakdown voltage VCBO 180 V Ic= 100 A IE= 0
Collector- emitter breakdown voltage VCEO 160 V Ic= 1 mA IB= 0 (Note.1)
Emitter - base breakdown voltage VEBO 6 V IE= 100A IC= 0
Collector-base cut-off current ICBO 50 nA VCB= 120 V , IE= 0
Emitter cut-off current IEBO 50 nA VEB= 4V , IC=0
DC current gain hFE 0.15 IC= 10 mA, IB=1mA
0.2 IC= 50 mA, IB=5mA
DC current gain hFE 1 IC= 10 mA, IB=1mA
1 IC= 50 mA, IB=5mA
DC current gain hFE(1) 80 VCE= 5V, IC= 1mA
DC current gain hFE(2) 80 - 300 VCE= 5V, IC= 10mA
DC current gain hFE(3) 80 - 300 VCE= 5V, IC= 50mA
Collector output capacitance Cob 6 pF VCB= 10V, IE= 0,f=1MHz
Transition frequency fT 100 - 300 MHz VCE= 10V, IC= 10mA,f=100MHz
Base - emitter saturation voltage VBE(sat) 0.2 - 1.0 V IC= 10 mA, IB=1mA to IC= 50 mA, IB=5mA
Collector-emitter saturation voltage VCE(sat) 0.2 - 1.0 V IC= 10 mA, IB=1mA to IC= 50 mA, IB=5mA
Package Type Dimensions (mm)
SOT-323 A: 2.2 max, B: 2.0 max, A1: 0.1 max, Lp: 1.15 max, Q: 0.65 max, c: 0.23 max, HE: 1.3 max, E: 2.2 max, e1: 0.4 max, e: 1.3 max, D: 1.8 max, w: 0.2 max, v: 0.15 max

Note.1: Pulse test: pulse width 300 us, duty cycle 2 %.


2309281726_Slkor-MMST5551_C18208595.pdf

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