Planar MOSFET 200V N Channel Siliup SP18N20TQ with Fast Switching and High Current Capability
Key Attributes
Model Number:
SP18N20TQ
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
200V
Current - Continuous Drain(Id):
18A
Operating Temperature -:
-55℃~+150℃
RDS(on):
160mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
52pF
Number:
-
Output Capacitance(Coss):
183pF
Pd - Power Dissipation:
145W
Input Capacitance(Ciss):
1.133nF
Gate Charge(Qg):
64nC@10V
Mfr. Part #:
SP18N20TQ
Package:
TO-220-3L-C
Product Description
Product Overview
The SP18N20TQ is a 200V N-Channel Planar MOSFET designed by Siliup Semiconductor Technology Co. Ltd. This MOSFET features fast switching, low gate charge, and low RDS(on), making it ideal for high-frequency switching applications and synchronous rectification. It is particularly well-suited for DC-DC converters and has undergone 100% single pulse avalanche energy testing.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Device Code: 18N20
- Package: TO-220-3L
- Technology: Planar MOSFET
- Channel Type: N-Channel
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Breakdown Voltage (Drain-Source) | V(BR)DSS | 200 | V | |||
| On-Resistance (Typical) | RDS(on) | @10V | 0.16 | |||
| Continuous Drain Current | ID | 18 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (Ta=25) | 200 | V | ||
| Gate-Source Voltage | VGS | (Ta=25) | 20 | V | ||
| Continuous Drain Current | ID | (TC=25) | 18 | A | ||
| Continuous Drain Current | ID | (TC=100) | 12 | A | ||
| Pulsed Drain Current | IDM | 72 | A | |||
| Single Pulse Avalanche Energy | EAS | 605 | mJ | |||
| Power Dissipation | PD | (TC=25) | 145 | W | ||
| Thermal Resistance (Junction-to-Case) | RJC | 0.862 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 200 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=160V, VGS=0V, TJ=25 | - | - | 25 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V, VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS, ID=250uA | 2 | 3 | 4 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V, ID=6A | - | 0.16 | 0.2 | |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=25V, VGS=0V, f=1MHz | - | 1133 | - | pF |
| Output Capacitance | Coss | - | 183 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 52 | - | pF | |
| Total Gate Charge | Qg | VDS=160V, VGS=10V, ID=11A | - | 64 | - | nC |
| Gate-Source Charge | Qgs | - | 11 | - | ||
| Gate-Drain Charge | Qgd | - | 31 | - | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD=100V, VGS=10V, RG=2.5, ID=11A | - | 11 | - | nS |
| Rise Time | tr | - | 18 | - | ||
| Turn-Off Delay Time | td(off) | - | 25 | - | ||
| Fall Time | tf | - | 6 | - | ||
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V, IS=1A, TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 18 | A | |
| Reverse Recovery Time | trr | IS=18A, di/dt=100A/us, TJ=25 | - | 160 | - | nS |
| Reverse Recovery Charge | Qrr | - | 880 | - | nC | |
| Package Information | ||||||
| Device | ||||||
| SP18N20TQ | TO-220-3L | 50 /Tape | ||||
2504101957_Siliup-SP18N20TQ_C42372372.pdf
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