Power management P channel MOSFET Siliup SP30P25NQ 30V PDFN2X2 6L package low on resistance device
Key Attributes
Model Number:
SP30P25NQ
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
6.5A
RDS(on):
25mΩ@10V;36mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
112pF
Number:
1 P-Channel
Output Capacitance(Coss):
116pF
Input Capacitance(Ciss):
850pF
Pd - Power Dissipation:
2W
Gate Charge(Qg):
13nC@10V
Mfr. Part #:
SP30P25NQ
Package:
PDFN-6L(2x2)
Product Description
Product Overview
The SP30P25NQ is a 30V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features low on-resistance and low input capacitance, making it suitable for power management functions and DC-DC converters. The device is available in a PDFN2X2-6L package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Device Code: 30P25
- Package: PDFN2X2-6L
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | -30 | V | |||
| On-Resistance | RDS(on)TYP | -10V | 25 | m | ||
| On-Resistance | RDS(on)TYP | -4.5V | 36 | m | ||
| Continuous Drain Current | ID | -6.5 | A | |||
| Absolute Maximum Ratings (Ta=25 unless otherwise noted) | ||||||
| Drain-Source Voltage | VDS | -30 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | -6.5 | A | |||
| Pulsed Drain Current | IDM | -26 | A | |||
| Power Dissipation | PD | 2 | W | |||
| Thermal Resistance Junction-to-Ambient | RJA | 62.5 | /W | |||
| Operating Junction Temperature Range | TSTG | -55 | +150 | |||
| Storage Temperature Range | TJ | -55 | +150 | |||
| Electrical Characteristics (TA=25 oC, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=-250uA | -30 | - | V | |
| Drain-Source Leakage Current | IDSS | VDS=-24V , VGS=0V , TJ=25 | - | - | -1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =-250uA | -1.0 | -1.5 | -2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =-10V, ID =-4A | - | 25 | 30 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =-4.5V, ID =-2A | - | 36 | 45 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=-15V , VGS=0V , f=1MHz | - | 850 | - | pF |
| Output Capacitance | Coss | - | 116 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 112 | - | pF | |
| Total Gate Charge | Qg | VDS=-15V , VGS=-10V , ID=-6.5A | - | 13 | - | nC |
| Gate-Source Charge | Qgs | - | 2.6 | - | - | |
| Gate-Drain Charge | Qg d | - | 2.2 | - | - | |
| Switching Characteristics | ||||||
| Turn-On Delay Time | Td(on) | VDD=-15V VGS=-10V , RG=3, ID=-4A | - | 7.5 | - | nS |
| Rise Time | Tr | - | 5.5 | - | - | |
| Turn-Off Delay Time | Td(off) | - | 19 | - | - | |
| Fall Time | Tf | - | 7 | - | - | |
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=-1A , TJ=25 | - | - | -1.2 | V |
| Package Information (PDFN2X2-6L) | ||||||
| Symbol | Dimensions In Millimeters | Min. | Typ. | Max. | ||
| A | 0.70 | 0.75 | 0.80 | |||
| A1 | 0.02 | 0.05 | ||||
| b | 0.25 | 0.30 | 0.35 | |||
| b1 | 0.20REF | |||||
| c | 0.203REF | |||||
| D | 1.90 | 2.00 | 2.10 | |||
| D1 | 0.08 | 0.125 | 0.18 | |||
| D2 | 0.85 | 0.90 | 0.95 | |||
| D3 | 0.25 | 0.30 | 0.35 | |||
| D4 | 0.33 | 0.375 | 0.43 | |||
| e | 0.65BSC | |||||
| Nd | 1.30BSC | |||||
| E | 1.90 | 2.00 | 2.10 | |||
| E2 | 0.95 | 1.00 | 1.05 | |||
| E3 | 0.55 | 0.60 | 0.65 | |||
| L | 0.20 | 0.25 | 0.30 | |||
| h | 0.25REF | |||||
2504101957_Siliup-SP30P25NQ_C41355031.pdf
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