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quality General purpose PNP transistor Slkor MMST2907A plastic encapsulated with complementary NPN MMST2222A type factory
quality General purpose PNP transistor Slkor MMST2907A plastic encapsulated with complementary NPN MMST2222A type factory

General purpose PNP transistor Slkor MMST2907A plastic encapsulated with complementary NPN MMST2222A type

Key Attributes
Model Number: MMST2907A
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
DC Current Gain:
300@150mA,10V
Type:
PNP
Transition Frequency(fT):
200MHz
Number:
1 PNP
Vce Saturation(VCE(sat)):
1.6V@500mA,50mA
Pd - Power Dissipation:
200mW
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
60V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
MMST2907A
Package:
SOT-323
Product Description

Product Overview

The MMST2907A is a PNP epitaxial planar plastic-encapsulated transistor designed for general-purpose applications. It offers a complementary NPN type (MMST2222A) and is marked with '2F'. This transistor is suitable for various electronic circuits requiring PNP amplification and switching capabilities.

Product Attributes

  • Brand: Not specified
  • Origin: Not specified
  • Material: Plastic-encapsulated
  • Color: Not specified
  • Complementary Type: MMST2222A (NPN)
  • Marking: 2F
  • Package Type: SOT-323

Technical Specifications

Parameter Symbol Test Conditions Min Typ Max Unit
Maximum Ratings (Ta=25 unless otherwise noted)
Collector-Base Voltage VCBO -60 V
Collector-Emitter Voltage VCEO -60 V
Emitter-Base Voltage VEBO -5 V
Collector Current - Continuous IC -0.6 A
Collector Dissipation PC 0.2 W
Operation Junction and Storage Temperature Range TJ, Tstg -55 +150
Electrical Characteristics (Ta=25 unless otherwise specified)
Collector-base breakdown voltage V(BR)CBO IC=-10A, IE=0 -60 V
Collector-emitter breakdown voltage V(BR)CEO IC=-10mA, IB=0 -60 V
Emitter-base breakdown voltage V(BR)EBO IE=-10A, IC=0 -5 V
Collector cut-off current ICBO VCB=-50V, IE=0 -100 nA
Collector cut-off current ICES VCB=-30V, IB=0 -100 nA
Emitter cut-off current IEBO VEB=-3V, IC=0 -100 nA
DC current gain hFE(1) VCE=-10V, IC=-0.1mA 75
DC current gain hFE(2) VCE=-10V, IC=-1mA 100
DC current gain hFE(3) VCE=-10V, IC=-10mA 100
DC current gain hFE(4) VCE=-10V, IC=-150mA 100 300
DC current gain hFE(5) VCE=-10V, IC=-500mA 50
Collector-emitter saturation voltage VCE(sat) IC=-150mA, IB=-15mA -0.4 V
Collector-emitter saturation voltage VCE(sat) IC=-500mA, IB=-50mA -1.6 V
Base-emitter saturation voltage VBE(sat) IC=-150mA, IB=-15mA -0.6 -1.3 V
Base-emitter saturation voltage VBE(sat) IC=-500mA, IB=-50mA -2.6 V
Transition frequency fT VCE=-20V, IC=-50mA, f=100MHz 200 MHz
Output capacitance Cob VCB=-10V, IE=0, f=0.1MHz 8 pF
Input capacitance Cib VEB=-2V, IC=0, f=0.1MHz 30 pF
Delay time td VCC=-30V, VBE(off)=-1.5V, IC=-150mA IB1==- 15mA 10 ns
Rise time tr 40 ns
Storage time tS VCC=-30V, IC=-150mA, IB1=-IB2=-15mA 80 ns
Fall time tf 30 ns
Package Outline Dimensions (SOT-323) Dimensions In Millimeters Dimensions In Inches
Symbol Min Max Min Max
A 0.900 1.100 0.035 0.043
A1 0.000 0.100 0.000 0.004
A2 0.900 1.000 0.035 0.039
b 0.200 0.400 0.008 0.016
c 0.080 0.150 0.003 0.006
D 2.000 2.200 0.079 0.087
E 1.150 1.350 0.045 0.053
E1 2.150 2.450 0.085 0.096
e 0.650 TYP 0.026 TYP
e1 1.200 1.400 0.047 0.055
L 0.525 REF 0.021 REF
L1 0.260 0.460 0.010 0.018
0 8 0 8

2504101957_Slkor-MMST2907A_C46061805.pdf
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