Epitaxial Planar Die Dual NPN Transistor Slkor MMDT5551 Medium Power Amplification Switching Device

Key Attributes
Model Number: MMDT5551
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
50nA
DC Current Gain:
300@10mA,5V
Transition Frequency(fT):
300MHz
Type:
NPN
Vce Saturation(VCE(sat)):
200mV@50mA,5mA
Number:
2 NPN
Pd - Power Dissipation:
200mW
Current - Collector(Ic):
200mA
Collector - Emitter Voltage VCEO:
160V
Mfr. Part #:
MMDT5551
Package:
SOT-363
Product Description

Product Overview

The MMDT5551 is a dual NPN epitaxial planar die construction transistor, featuring a complementary PNP type (MMDT5401) available. It is ideally suited for medium power amplification and switching applications. This device offers robust performance with key electrical characteristics such as high breakdown voltages and controlled DC current gain (hFE) across various collector current levels. Its transition frequency (fT) and low output capacitance (Cob) make it suitable for high-frequency operations. The device also exhibits low saturation voltages (VCE(sat) and VBE(sat)), ensuring efficient power handling.

Product Attributes

  • Brand: SLKORMICRO
  • Model: MMDT5551
  • Construction: Epitaxial Planar Die
  • Type: Dual Transistor (NPN+NPN)
  • Complementary Type: PNP (MMDT5401)

Technical Specifications

Parameter Condition Min Max Unit
Collector-Base Voltage (V(BR)CBO) IC=100A, IE=0 180 V
Collector-Emitter Voltage (V(BR)CEO) IC=1mA, IB=0 160 V
Emitter-Base Voltage (V(BR)EBO) IE=10A, IC=0 6 V
Collector Cut-off Current (ICBO) VCB=120V, IE=0 0.05 A
Emitter Cut-off Current (IEBO) VEB=4V, IC=0 0.05 A
DC Current Gain (hFE) VCE=5V, IC=1mA 80
DC Current Gain (hFE) VCE=5V, IC=10mA 100 300
DC Current Gain (hFE) VCE=5V, IC=50mA 30
Collector-Emitter Saturation Voltage (VCE(sat)) IC=10mA, IB=1mA 0.15 V
Collector-Emitter Saturation Voltage (VCE(sat)) IC=50mA, IB=5mA 0.2 V
Base-Emitter Saturation Voltage (VBE(sat)) IC=10mA, IB=1mA 1 V
Base-Emitter Saturation Voltage (VBE(sat)) IC=50mA, IB=5mA 1 V
Transition Frequency (fT) VCE=10V, IC=10mA, f=100MHz 100 300 MHz
Output Capacitance (Cob) VCB=10V, IE=0, f=1MHz 6 pF
Noise Figure (NF) VCE=5V, IC=0.2mA, RS=1K, f=1kHz 8 dB
Collector-Base Voltage (Max) 180 V
Collector-Emitter Voltage (Max) 160 V
Emitter-Base Voltage (Max) 6 V
Collector Current - Continuous (Max) 0.2 A
Collector Power Dissipation (Max) 0.2 W
Junction Temperature (Max) 150 C
Storage Temperature -55 150 C
Package Dimensions (Millimeters) A 0.900 1.100 mm
Package Dimensions (Millimeters) A1 0.000 0.100 mm
Package Dimensions (Millimeters) A2 0.900 1.000 mm
Package Dimensions (Millimeters) b 0.150 0.350 mm
Package Dimensions (Millimeters) c 0.000 0.150 mm
Package Dimensions (Millimeters) D 2.000 2.200 mm
Package Dimensions (Millimeters) E 1.150 1.350 mm
Package Dimensions (Millimeters) E1 2.150 2.400 mm
Package Dimensions (Millimeters) e mm
Package Dimensions (Millimeters) e1 1.200 1.400 mm
Package Dimensions (Millimeters) L mm
Package Dimensions (Millimeters) L1 0.260 0.460 mm
Package Dimensions (Millimeters) 0.000 0.150 mm
Package Dimensions (Millimeters) 0 8
Package Dimensions (Millimeters) REF 0.525 mm
Package Dimensions (Millimeters) TYP 0.650 mm
Package Dimensions (Inches) A 0.035 0.043 in
Package Dimensions (Inches) A1 0.000 0.004 in
Package Dimensions (Inches) A2 0.035 0.039 in
Package Dimensions (Inches) b 0.006 0.014 in
Package Dimensions (Inches) c 0.000 0.006 in
Package Dimensions (Inches) D 0.079 0.087 in
Package Dimensions (Inches) E 0.045 0.053 in
Package Dimensions (Inches) E1 0.085 0.094 in
Package Dimensions (Inches) e in
Package Dimensions (Inches) e1 0.047 0.055 in
Package Dimensions (Inches) L in
Package Dimensions (Inches) L1 0.010 0.018 in
Package Dimensions (Inches) 0.000 0.006 in
Package Dimensions (Inches) 0 8
Package Dimensions (Inches) REF 0.021 in
Package Dimensions (Inches) TYP 0.026 in

2405131115_Slkor-MMDT5551_C22392322.pdf

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