Switching and Amplification Transistor Slkor FMMT591 PNP Silicon Epitaxial Planar Type for Electronics

Key Attributes
Model Number: FMMT591
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
DC Current Gain:
100@500mA,5V
Transition Frequency(fT):
150MHz
Vce Saturation(VCE(sat)):
600mV
Type:
PNP
Pd - Power Dissipation:
500mW
Current - Collector(Ic):
1A
Collector - Emitter Voltage VCEO:
60V
Operating Temperature:
-
Mfr. Part #:
FMMT591
Package:
SOT-23
Product Description

Product Overview

The FMMT591 is a PNP Silicon Epitaxial Planar Transistor designed with low equivalent on-resistance. It is complementary to the FMMT491. This transistor is suitable for various applications requiring efficient signal amplification and switching.

Product Attributes

  • Brand: SLKORMicro (implied by website URL)
  • Type: PNP Silicon Epitaxial Planar Transistor
  • Complementary to: FMMT491

Technical Specifications

Parameter Symbol Value Unit Conditions
Absolute Maximum Ratings
Collector Base Voltage -VCBO 80 V at 25 ambient temperature unless otherwise specified
Collector Emitter Voltage -VCEO 60 V at 25 ambient temperature unless otherwise specified
Emitter Base Voltage -VEBO 5 V at 25 ambient temperature unless otherwise specified
Collector Current -IC 1 A at 25 ambient temperature unless otherwise specified
Power Dissipation PD 500 mW at 25 ambient temperature unless otherwise specified
Junction Temperature TJ 150 at 25 ambient temperature unless otherwise specified
Storage Temperature Range TSTG -55 to 150 at 25 ambient temperature unless otherwise specified
Peak Pulse Current -ICM 2 A at 25 ambient temperature unless otherwise specified
Electrical Characteristics
DC Current Gain HFE 100 (Min) - at -VCE = 5 V, -IC = 1 mA
DC Current Gain HFE 100 (Typ) - at -VCE = 5 V, -IC = 500 mA
DC Current Gain HFE 300 (Max) - at -VCE = 5 V, -IC = 1 A
Collector Base Cutoff Current -ICBO 100 nA at -VCB = 60 V
Emitter Base Cutoff Current -IEBO 100 nA at -VEB = 5.6 V
Collector Base Breakdown Voltage -V(BR)CBO 80 V at -IC = 100 A
Collector Emitter Breakdown Voltage -V(BR)CEO 60 V at -IC = 10 mA
Emitter Base Breakdown Voltage -V(BR)EBO 5 V at -IE = 100 A
Collector Emitter Saturation Voltage -VCE(sat) 300 mV at -IC = 500 mA, -IB = 50 mA
Collector Emitter Saturation Voltage -VCE(sat) - mV at -IC =1 A, -IB = 100 mA
Base Emitter Saturation Voltage -VBE(sat) 1.2 V at -IC = 1 A, -IB = 100 mA
Base Emitter Voltage -VBE(on) 1 V at -VCE = 5 V, -IC = 1 A
Transition Frequency FT 150 MHz at -VCE = 10 V, -IC = 50 mA, f= 100MHz
Collector Output Capacitance Cob 10 pF at -VCB = 10 V, f= 1MHz
Note1: Measured under pulsed condition, Pulse width 300uS, Duty cycle 2%.
Package Outline (SOT-23) Dimensions
Symbol Min. Typ. Max. Unit
A 0.900 1.025 1.150 mm
A1 0.000 0.050 0.100 mm
b 0.300 0.400 0.500 mm
c 0.080 0.115 0.150 mm
D 2.800 2.900 3.000 mm
E 1.200 1.300 1.400 mm
HE 2.250 2.400 2.550 mm
e 1.800 1.900 2.000 mm
L1 0.550 REF - mm
L 0.300 0.500 - mm
0 8 - -
Ordering Information
Device Package Reel Dimension (inch) Shipping -
FMMT591 SOT-23 7 3,000 -

2110081930_Slkor-FMMT591_C2904406.pdf

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