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quality P Channel MOSFET Siliup SP2004KT3 Featuring 20V Drain Source Voltage and 2KV Electrostatic Discharge factory
quality P Channel MOSFET Siliup SP2004KT3 Featuring 20V Drain Source Voltage and 2KV Electrostatic Discharge factory

P Channel MOSFET Siliup SP2004KT3 Featuring 20V Drain Source Voltage and 2KV Electrostatic Discharge

Key Attributes
Model Number: SP2004KT3
Product Custom Attributes
Pd - Power Dissipation:
200mW
Drain To Source Voltage:
20V
Configuration:
-
Current - Continuous Drain(Id):
700mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
400mΩ@4.5V;550mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
650mV@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
9pF
Number:
1 P-Channel
Output Capacitance(Coss):
15pF
Input Capacitance(Ciss):
113pF
Gate Charge(Qg):
1.9nC@4.5V
Mfr. Part #:
SP2004KT3
Package:
SOT-323
Product Description

Product Overview

The SP2004KT3 is a 20V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. This surface mount device offers high power and current handling capabilities, along with ESD protection up to 2KV. It is suitable for applications such as battery switches and DC/DC converters.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Product Code: SP2004KT3
  • Technology: P-Channel MOSFET
  • Package: SOT-323
  • Marking: 04K

Technical Specifications

Parameter Symbol Conditions Min. Typ. Max. Unit
Product Summary
Drain-Source Voltage V(BR)DSS -20 V
Static Drain-Source On-Resistance RDS(on) -4.5V 400 550 m
Static Drain-Source On-Resistance RDS(on) -2.5V 550 700 m
Continuous Drain Current ID -0.7 A
Absolute Maximum Ratings (Ta=25, unless otherwise noted)
Drain-Source Voltage VDSS -20 V
Gate-Source Voltage VGSS 12 V
Continuous Drain Current ID -0.7 A
Pulse Drain Current IDM Tested -2.8 A
Power Dissipation PD 200 mW
Thermal Resistance Junction-to-Ambient RJA 625 C/W
Storage Temperature Range TSTG -55 150 C
Operating Junction Temperature Range TJ -55 150 C
Electrical Characteristics (Ta=25, unless otherwise noted)
Drain-Source Breakdown Voltage BVDSS VGS=0V , ID=-250A -20 V
Drain-Source Leakage Current IDSS VDS=-16V , VGS=0V -1 uA
Gate-Source Leakage Current IGSS VGS=12V , VDS=0V 10 uA
Gate Threshold Voltage VGS(th) VDS=VGS , ID=-250A -0.35 -0.65 -1.00 V
Static Drain-Source On-Resistance RDS(ON) VGS=-4.5V , ID=-500mA 400 550 m
Static Drain-Source On-Resistance RDS(ON) VGS=-2.5V , ID=-200mA 550 700 m
Input Capacitance Ciss VDS=-16V , VGS=0V , f=1MHz 113 pF
Output Capacitance Coss 15 pF
Reverse Transfer Capacitance Crss 9 pF
Total Gate Charge Qg VDS=-10V , VGS=-4.5V , ID=-2A 1.9 nC
Gate-Source Charge Qgs 0.4 nC
Gate-Drain Charge Qgd 0.31 nC
Turn-On Delay Time td(on) VDD=-10V VGS=-4.5V , RG=10 , ID=-200mA 9 nS
Turn-On Rise Time tr 5.7 nS
Turn-Off Delay Time td(off) 32.6 nS
Turn-Off Fall Time tf 20.3 nS
Diode Forward Voltage VSD VGS=0V , IS=-1A , TJ=25 -1.2 V
Package Information (SOT-323)
Symbol Dimensions In Millimeters Dimensions In Inches
A 0.900 - 1.100 0.035 - 0.043
A1 0.000 - 0.100 0.000 - 0.004
A2 0.900 - 1.000 0.035 - 0.039
b 0.200 - 0.400 0.008 - 0.016
c 0.080 - 0.150 0.003 - 0.006
D 2.000 - 2.200 0.079 - 0.087
E 1.150 - 1.350 0.045 - 0.053
E1 2.150 - 2.450 0.085 - 0.096
e 0.650 TYP. 0.026 TYP.
e1 1.200 - 1.400 0.047 - 0.055
L 0.525 REF. 0.021 REF.
L1 0.260 - 0.460 0.010 - 0.018
0 - 8 0 - 8

2504101957_Siliup-SP2004KT3_C41354943.pdf

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