Trench Power MV MOSFET Technology Slkor SL25N10 N Channel Enhancement Mode Transistor for Power Conversion
Key Attributes
Model Number:
SL25N10
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
25A
Operating Temperature -:
-55℃~+175℃
RDS(on):
45mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
30pF
Number:
1 N-channel
Input Capacitance(Ciss):
2.25nF
Pd - Power Dissipation:
34W
Gate Charge(Qg):
26nC@10V
Mfr. Part #:
SL25N10
Package:
TO-252
Product Description
Product Overview
The SL25N10 is an N-Channel Enhancement Mode Field Effect Transistor featuring Trench Power MV MOSFET technology. It offers excellent heat dissipation and a high-density cell design for low RDS(ON). Ideal for DC-DC converters and power management functions.
Product Attributes
- Brand: SLKORMicro
- Model: SL25N10
- Technology: Trench Power MV MOSFET
- Package: TO-252
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
| Drain-Source Breakdown Voltage | BVDSS | VGS= 0V, ID=250A | 100 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=80V,VGS=0V | 1 | A | ||
| Gate-Body Leakage Current | IGSS | VGS= 20V, VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS= VGS, ID=250A | 1.1 | 1.8 | 3.0 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS= 10V, ID=15A | 35 | 45 | m | |
| Diode Forward Voltage | VSD | IS=15A,VGS=0V | 0.8 | 1.2 | V | |
| Maximum Body-Diode Continuous Current | IS | 15 | A | |||
| Input Capacitance | Ciss | VDS=50V,VGS=0V,f=1MHZ | 2250 | pF | ||
| Output Capacitance | Coss | VDS=50V,VGS=0V,f=1MHZ | 330 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=50V,VGS=0V,f=1MHZ | 30 | pF | ||
| Total Gate Charge | Qg | VGS=10V,VDS=50V,ID=10A | 26 | nC | ||
| Gate-Source Charge | Qgs | VGS=10V,VDS=50V,ID=10A | 5.4 | nC | ||
| Gate-Drain Charge | Qg d | VGS=10V,VDS=50V,ID=10A | 5.8 | nC | ||
| Reverse Recovery Charge | Qrr | IF=10A, di/dt=100A/us | 30.1 | nC | ||
| Reverse Recovery Time | trr | IF=10A, di/dt=100A/us | 40 | ns | ||
| Turn-on Delay Time | tD(on) | VGS=10V,VDD=50V,RL=6.4 RGEN=3 | 7 | ns | ||
| Turn-on Rise Time | tr | VGS=10V,VDD=50V,RL=6.4 RGEN=3 | 24 | ns | ||
| Turn-off Delay Time | tD(off) | VGS=10V,VDD=50V,RL=6.4 RGEN=3 | 24 | ns | ||
| Turn-off fall Time | tf | VGS=10V,VDD=50V,RL=6.4 RGEN=3 | 31 | ns | ||
| Drain-source Voltage | VDS | 100 | V | |||
| Gate-source Voltage | VGS | 20 | V | |||
| Drain Current | ID | 25 | A | |||
| Pulsed Drain Current | IDM | 120 | A | |||
| Single Pulse Avalanche Energy | EAS | 29 | mJ | |||
| Total Power Dissipation | PD | TA=25 | 34 | W | ||
| Junction-to-Case Thermal Resistance | RJC | 4.4 | / W | |||
| Junction and Storage Temperature Range | TJ ,TSTG | -55 | +175 |
2201210930_Slkor-SL25N10_C2965548.pdf
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