SL142N06Q N Channel MOSFET Featuring 100 Percent UIS Tested and Halogen Free for Power Electronics
Key Attributes
Model Number:
SL142N06Q
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
142A
Operating Temperature -:
-
RDS(on):
2.6mΩ@10V,20A
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
193pF
Number:
1 N-channel
Output Capacitance(Coss):
1.331nF
Input Capacitance(Ciss):
5.155nF
Pd - Power Dissipation:
125W
Gate Charge(Qg):
93.7nC@10V
Mfr. Part #:
SL142N06Q
Package:
PDFN5x6-8
Product Description
Product Overview
The SL142N06Q is a high-performance N-Channel MOSFET designed for efficient switching and synchronous rectification applications. It features fast switching speed, reliability, and is ROHS Compliant & Halogen-Free. This device is 100% UIS and Rg Tested, making it suitable for demanding applications like BLDC motor control.
Product Attributes
- Brand: SLKOR Micro
- Certifications: ROHS Compliant & Halogen-Free
- Testing: 100% UIS and Rg Tested
Technical Specifications
| Ordering Information | Package Type | Shipping | Marking | Absolute Maximum Ratings (TJ=25C Unless Otherwise Noted) | Thermal Characteristics | Product Summary | Electrical Characteristics (TJ=25C Unless Otherwise Noted) | Source-Drain Characteristics | ||||||||||||||||||||
| Orderable Part Number | Form | Symbol | Parameter | Unit | Symbol | Parameter | Rating | Unit | Symbol | N-Channel | Unit | Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Unit | Symbol | Parameter | Unit | |||||||
| SL142N06Q | PDFN5*6 | Tape & Reel 5000 / Tape & Reel | SL142N06Q | VDSS | Drain-Source Voltage | 60 V | RJC | Thermal Resistance-Junction to Case Steady State | 1 | C/W | VDSS | N-Channel | 60 V | BVDSS | Drain-Source Breakdown Voltage | VGS=0V, IDS=250uA | 60 | - | - | V | VSD | Diode Forward Voltage | ISD=10A, VGS=0V | - | 0.8 | 1.1 | V | |
| VGSS | Gate-Source Voltage | 20 V | RJA | Thermal Resistance-Junction to Ambient Steady State | 48 | C/W | RDS(ON)-Max | N-Channel | 2.6 m | IDSS | Zero Gate Voltage Drain Current | VDS=48V, VGS=0V | - | - | 1 | uA | trr | Reverse Recovery Time | IF=10A, VR=48V, dlF/dt=100A/s | - | 45 | - | nS | |||||
| TJ | Maximum Junction Temperature | 150 C | ID | N-Channel | 142 A | VGS(th) | Gate Threshold Voltage | VDS=VGS, IDS=250uA | 1 | 1.7 | 2.5 | V | Qrr | Reverse Recovery Charge | - | 44 | - | nC | ||||||||||
| TSTG | Storage Temperature Range | -55 to 150 C | IGSS | Gate Leakage Current | VGS=20V, VDS=0V | - | - | 100 | nA | |||||||||||||||||||
| IS | Diode Continuous Forward Current TC=25C | 114 A | RDS(ON) | Drain-Source On-state Resistance | VGS=10V, IDS=20A | - | 2.2 | 2.6 | m | |||||||||||||||||||
| IDM | Pulse Drain Current Tested TC=25C | 400 A | VGS=4.5V, IDS=10A | - | 3.2 | 4.2 | m | |||||||||||||||||||||
| ID | Continuous Drain Current TC=25C | 142 A | gfs | Forward Transconductance | VDS=5V, IDS=10A | - | 35 | - | S | |||||||||||||||||||
| TC=100C | 138 A | RG | Gate Resistance | VGS=0V,VDS=0V, Freq.=1MHz | - | 0.75 | - | |||||||||||||||||||||
| PD | Maximum Power Dissipation TC=25C | 125 W | Ciss | Input Capacitance | VGS=0V, VDS=30V, Freq.=1MHz | - | 5155 | - | pF | |||||||||||||||||||
| TC=100C | 50 W | Coss | Output Capacitance | - | 1331 | - | pF | |||||||||||||||||||||
| ID | Continuous Drain Current TA=25C | 31 A | Crss | Reverse Transfer Capacitance | - | 193 | - | pF | ||||||||||||||||||||
| TA=70C | 25 A | td(ON) | Turn-on Delay Time | VGS=10V,VDS=25V, ID=1A,RGEN=3 | - | 16 | - | nS | ||||||||||||||||||||
| PD | Maximum Power Dissipation TA=25C | 2.6 W | tr | Turn-on Rise Time | - | 5.6 | - | nS | ||||||||||||||||||||
| TA=70C | 1.7 W | td(OFF) | Turn-off Delay Time | - | 54 | - | nS | |||||||||||||||||||||
| IAS | Avalanche Current, Single pulse L=0.1mH | 51 A | tf | Turn-off Fall Time | - | 101 | - | nS | ||||||||||||||||||||
| L=0.5mH | 27 A | Qg | Total Gate Charge | VGS=4.5V,VDS=30V ID=20A | - | 45 | - | nC | ||||||||||||||||||||
| EAS | Avalanche Energy, Single pulse L=0.1mH | 130 mJ | Qg | Total Gate Charge | VGS=10V,VDS=30V, ID=20A | - | 93.7 | - | nC | |||||||||||||||||||
| L=0.5mH | 182 mJ | Qgs | Gate-Source Charge | - | 20.4 | - | nC | |||||||||||||||||||||
| Qgd | Gate-Drain Charge | - | 20.5 | - | nC |
2309281727_Slkor-SL142N06Q_C18208610.pdf
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